DATA SH EET
Product specification
Supersedes data of 1999 May 18 2003 Apr 10
DISCRETE SEMICONDUCTORS
BZX84 series
Voltage regulator diodes
b
ook, halfpage
M3D088
2003 Apr 10 2
Philips Semiconductors Product specification
Voltage regulator diodes BZX84 series
FEATURES
Total power dissipation: max. 250 mW
Three tolerance series: ±1%, ±2% and approx. ±5%
Working voltage range: nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
General regulation functions.
DESCRIPTION
Low-power voltage regulator diodes in small SOT23
plastic SMD packages.
The diodes are available in the normalized E24 ±1%
(BZX84-A), ±2% (BZX84-B) and approx. ±5% (BZX84-C)
tolerance range. The series consists of 37 types with
nominal working voltages from 2.4 to 75 V.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
MAM243
2
n.c. 1
3
21
3
Top view
2003 Apr 10 3
Philips Semiconductors Product specification
Voltage regulator diodes BZX84 series
MARKING
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
TYPE
NUMBER MARKING
CODE(1) TYPE
NUMBER MARKING
CODE(1) TYPE
NUMBER MARKING
CODE(1) TYPE
NUMBER MARKING
CODE(1)
Marking codes for BZX84-A2V4 to BZX84-A75
BZX84-A2V4 Y50 or 50 BZX84-A6V2 Y60 or 60 BZX84-A16 Y70 BZX84-A43 Y80 or C5
BZX84-A2V7 Y51 or 51 BZX84-A6V8 Y61 or 61 BZX84-A18 Y71 BZX84-A47 Y81
BZX84-A3V0 Y52 or 52 BZX84-A7V5 Y62 or 62 BZX84-A20 Y72 or C2 BZX84-A51 Y82 or C6
BZX84-A3V3 Y53 BZX84-A8V2 Y63 or 63 BZX84-A22 Y73 BZX84-A56 Y83
BZX84-A3V6 Y54 or C1 BZX84-A9V1 Y64 or 64 BZX84-A24 Y74 BZX84-A62 Y84
BZX84-A3V9 Y55 or 55 BZX84-A10 Y65 or 65 BZX84-A27 Y75 or 75 BZX84-A68 Y85
BZX84-A4V3 Y56 or 56 BZX84-A11 Y66 or 04 BZX84-A30 Y76 BZX84-A75 Y86 or 86
BZX84-A4V7 Y57 or 57 BZX84-A12 Y67 or 67 BZX84-A33 Y77 −−
BZX84-A5V1 Y58 or 58 BZX84-A13 Y68 or C0 BZX84-A36 Y78 or C3 −−
BZX84-A5V6 Y59 or 59 BZX84-A15 Y69 or 69 BZX84-A39 Y79 or C4 −−
Marking codes for BZX84-B2V4 to BZX84-B75
BZX84-B2V4 Z50 or Z0 BZX84-B6V2 Z60 or R5 BZX84-B16 Z70 or 70 BZX84-B43 Z80 or S5
BZX84-B2V7 Z51 or Z1 BZX84-B6V8 Z61 or R6 BZX84-B18 Z71 or 71 BZX84-B47 Z81 or S6
BZX84-B3V0 Z52 or S1 BZX84-B7V5 Z62 or R8 BZX84-B20 Z72 or 72 BZX84-B51 Z82 or S9
BZX84-B3V3 Z53 or S2 BZX84-B8V2 Z63 or R9 BZX84-B22 Z73 or 73 BZX84-B56 Z83 or R0
BZX84-B3V6 Z54 or S3 BZX84-B9V1 Z64 or T1 BZX84-B24 Z74 or 74 BZX84-B62 Z84 or R3
BZX84-B3V9 Z55 or S4 BZX84-B10 Z65 or 66 BZX84-B27 Z75 or Z5 BZX84-B68 Z85 or R4
BZX84-B4V3 Z56 or S7 BZX84-B11 Z66 or Z6 BZX84-B30 Z76 or Z4 BZX84-B75 Z86 or R7
BZX84-B4V7 Z57 or S8 BZX84-B12 Z67 or Z7 BZX84-B33 Z77 or Y1 −−
BZX84-B5V1 Z58 or R1 BZX84-B13 Z68 or Z8 BZX84-B36 Z78 or Y2 −−
BZX84-B5V6 Z59 or R2 BZX84-B15 Z69 or Z9 BZX84-B39 Z79 or S0 −−
Marking codes for BZX84-C2V4 to BZX84-C75
BZX84-C2V4 Z11 or T3 BZX84-C6V2 Z4BZX84-C16 Y5BZX84-C43 Y15 or B4
BZX84-C2V7 Z12 or T4 BZX84-C6V8 Z5BZX84-C18 Y6BZX84-C47 Y16 or B5
BZX84-C3V0 Z13 or T9 BZX84-C7V5 Z6BZX84-C20 Y7BZX84-C51 Y17 or B7
BZX84-C3V3 Z14 or B1 BZX84-C8V2 Z7BZX84-C22 Y8BZX84-C56 Y18 or B8
BZX84-C3V6 Z15 or B2 BZX84-C9V1 Z8BZX84-C24 Y9BZX84-C62 Y19 or B9
BZX84-C3V9 Z16 or B3 BZX84-C10 Z9BZX84-C27 Y10 or T2 BZX84-C68 Y20 or B0
BZX84-C4V3 Z17 or B6 BZX84-C11 Y1BZX84-C30 Y11 or T5 BZX84-C75 Y21 or A1
BZX84-C4V7 Z1BZX84-C12 Y2BZX84-C33 Y12 or T6 −−
BZX84-C5V1 Z2BZX84-C13 Y3BZX84-C36 Y13 or T7 −−
BZX84-C5V6 Z3BZX84-C15 Y4BZX84-C39 Y14 or T8 −−
2003 Apr 10 4
Philips Semiconductors Product specification
Voltage regulator diodes BZX84 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX84-A and B and C series
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IFcontinuous forward current 200 mA
IZSM non-repetitive peak reverse current tp= 100 µs; square wave;
Tj=25°C prior to surge see Tables
1 and 2
Ptot total power dissipation Tamb =25°C; note 1 250 mW
PZSM non-repetitive peak reverse power
dissipation tp= 100 µs; square wave;
Tj=25°C prior to surge; see Fig.2 40 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage IF= 10 mA; see Fig.3 0.9 V
IRreverse current
BZX84-A/B/C2V4 VR=1V 50 µA
BZX84-A/B/C2V7 VR=1V 20 µA
BZX84-A/B/C3V0 VR=1V 10 µA
BZX84-A/B/C3V3 VR=1V 5 µA
BZX84-A/B/C3V6 VR=1V 5 µA
BZX84-A/B/C3V9 VR=1V 3 µA
BZX84-A/B/C4V3 VR=1V 3 µA
BZX84-A/B/C4V7 VR=2V 3 µA
BZX84-A/B/C5V1 VR=2V 2 µA
BZX84-A/B/C5V6 VR=2V 1 µA
BZX84-A/B/C6V2 VR=4V 3 µA
BZX84-A/B/C6V8 VR=4V 2 µA
BZX84-A/B/C7V5 VR=5V 1 µA
BZX84-A/B/C8V2 VR= 5 V 700 nA
BZX84-A/B/C9V1 VR= 6 V 500 nA
BZX84-A/B/C10 VR= 7 V 200 nA
BZX84-A/B/C11 VR= 8 V 100 nA
BZX84-A/B/C12 VR= 8 V 100 nA
BZX84-A/B/C13 VR= 8 V 100 nA
BZX84-A/B/C15 to 75 VR= 0.7VZnom 50 nA
2003 Apr 10 5
Philips Semiconductors Product specification
Voltage regulator diodes BZX84 series
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Table 1 Per type BZX84-A/B/C2V4 to A/B/C24
Tj=25°C unless otherwise specified.
BZX84-
Axxx
Bxxx
Cxxx
WORKING VOLTAGE
VZ(V)
at IZtest =5mA
DIFFERENTIAL
RESISTANCE
rdif ()
TEMP. COEFF.
SZ(mV/K)
at IZtest =5mA
(see Figs 4 and 5)
DIODE CAP.
Cd(pF)
at f = 1 MHz;
VR=0V
NON-REPETITIVE
PEAK REVERSE
CURRENT
IZSM (A)
at tp= 100 µs;
Tamb =25°C
Tol. ±1% (A) Tol. ±2% (B) Tol. approx.
±5% (C) at
IZtest =1mA at
IZtest =5mA
MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.
2V4 2.37 2.43 2.35 2.45 2.2 2.6 275 600 70 100 3.5 1.6 0 450 6.0
2V7 2.67 2.73 2.65 2.75 2.5 2.9 300 600 75 100 3.5 2.0 0 450 6.0
3V0 2.97 3.03 2.94 3.06 2.8 3.2 325 600 80 95 3.5 2.1 0 450 6.0
3V3 3.26 3.34 3.23 3.37 3.1 3.5 350 600 85 95 3.5 2.4 0 450 6.0
3V6 3.56 3.64 3.53 3.67 3.4 3.8 375 600 85 90 3.5 2.4 0 450 6.0
3V9 3.86 3.94 3.82 3.98 3.7 4.1 400 600 85 90 3.5 2.5 0 450 6.0
4V3 4.25 4.35 4.21 4.39 4.0 4.6 410 600 80 90 3.5 2.5 0 450 6.0
4V7 4.65 4.75 4.61 4.79 4.4 5.0 425 500 50 80 3.5 1.4 0.2 300 6.0
5V1 5.04 5.16 5.00 5.20 4.8 5.4 400 480 40 60 2.7 0.8 1.2 300 6.0
5V6 5.54 5.66 5.49 5.71 5.2 6.0 80 400 15 40 2.0 1.2 2.5 300 6.0
6V2 6.13 6.27 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0
6V8 6.73 6.87 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0
7V5 7.42 7.58 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0
8V2 8.11 8.29 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0
9V1 9.00 9.20 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0
10 9.90 10.10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0
11 10.80 11.11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5
12 11.88 12.12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5
13 12.87 13.13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5
15 14.85 15.15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0
16 15.84 16.16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5
18 17.82 18.18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5
20 19.80 20.20 19.60 20.40 18.8 21.2 60 225 15 55 14.4 16.4 18.0 60 1.5
22 21.78 22.22 21.60 22.40 20.8 23.3 60 250 20 55 16.4 18.4 20.0 60 1.25
24 23.76 24.24 23.50 24.50 22.8 25.6 60 250 25 70 18.4 20.4 22.0 55 1.25
2003 Apr 10 6
Philips Semiconductors Product specification
Voltage regulator diodes BZX84 series
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Table 2 Per type BZX84-A/B/C27 to A/B/C75
Tj=25°C unless otherwise specified.
BZX84-
Axxx
Bxxx
Cxxx
WORKING VOLTAGE
VZ(V)
at IZtest =2mA
DIFFERENTIAL
RESISTANCE
rdif ()
TEMP. COEFF.
SZ(mV/K)
at IZtest =2mA
(see Figs 4 and 5)
DIODE CAP.
Cd(pF)
at f = 1 MHz;
VR=0V
NON-REPETITIVE
PEAK REVERSE
CURRENT
IZSM (A)
at tp= 100 µs;
Tamb =25°C
Tol. ±1% (A) Tol. ±2% (B) Tol. approx.
±5% (C) at
IZtest = 0.5 mA at
IZtest =2mA
MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.
27 26.73 27.27 26.50 27.50 25.1 28.9 65 300 25 80 21.4 23.4 25.3 50 1.0
30 29.70 30.30 29.40 30.60 28.0 32.0 70 300 30 80 24.4 26.6 29.4 50 1.0
33 32.67 33.33 32.30 33.70 31.0 35.0 75 325 35 80 27.4 29.7 33.4 45 0.9
36 35.64 36.36 35.30 36.70 34.0 38.0 80 350 35 90 30.4 33.0 37.4 45 0.8
39 38.61 39.39 38.20 39.80 37.0 41.0 80 350 40 130 33.4 36.4 41.2 45 0.7
43 42.57 43.43 42.10 43.90 40.0 46.0 85 375 45 150 37.6 41.2 46.6 40 0.6
47 46.53 47.47 46.10 47.90 44.0 50.0 85 375 50 170 42.0 46.1 51.8 40 0.5
51 50.49 51.51 50.00 52.00 48.0 54.0 90 400 60 180 46.6 51.0 57.2 40 0.4
56 55.44 56.56 54.90 57.10 52.0 60.0 100 425 70 200 52.2 57.0 63.8 40 0.3
62 61.38 62.62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3
68 67.32 68.68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25
75 74.25 75.75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2
2003 Apr 10 7
Philips Semiconductors Product specification
Voltage regulator diodes BZX84 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed circuit-board.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 330 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
2003 Apr 10 8
Philips Semiconductors Product specification
Voltage regulator diodes BZX84 series
GRAPHICAL DATA
Fig.2 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
handbook, halfpage
MBG801
103
1 duration (ms)
PZSM
(W)
10
102
101
10
1
(1)
(2)
(1) Tj=25°C (prior to surge).
(2) Tj= 150 °C (prior to surge).
Fig.3 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0.6 1
300
100
0
200
MBG781
0.8 VF (V)
IF
(mA)
Tj=25°C.
Fig.4 Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
060
0
2
3
1
MBG783
20 40 IZ (mA)
SZ
(mV/K) 4V3
3V9
3V6
3V0
2V4
2V7
3V3
BZX84-A/B/C2V4 to A/B/C4V3.
Tj=25to150°C.
Fig.5 Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
02016
10
0
5
5
MBG782
4812 I
Z
(mA)
SZ
(mV/K)
4V7
12
11
10
9V1
8V2
7V5
6V8 6V2
5V6
5V1
BZX84-A/B/C4V7 to A/B/C12.
Tj=25to150°C.
2003 Apr 10 9
Philips Semiconductors Product specification
Voltage regulator diodes BZX84 series
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
2003 Apr 10 10
Philips Semiconductors Product specification
Voltage regulator diodes BZX84 series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Apr 10 11
Philips Semiconductors Product specification
Voltage regulator diodes BZX84 series
NOTES
© Koninklijke Philips Electronics N.V. 2003 SCA75
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Printed in The Netherlands 613514/03/pp12 Date of release: 2003 Apr 10 Document order number: 9397 750 10959