BUXD87
HIGH VOLTAGE NPN POWER TRANSISTOR
■REVE RSE P INS OUT Vs STAN DARD
IP AK/D PAK PACKAGE
■HIGH VOLTAGE CAPABILITY
■HIGH DC CURRENT GAIN
■THRO UG H-HO LE I PA K (TO-251) PO WE R
PACKAGE IN TU BE (SUFFIX "-1")
■SURFACE -M O UNT ING DPA K (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS:
■SWITC H MODE POW ER SUP PLIES
■GENERAL PURPOSE SWITCHING
DESCRIPTION
Th e BUXD87 is manufactured using High V oltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
®
INT E R NAL SCH E M ATI C DIAG RA M
April 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -1.5V) 1000 V
VCEO Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 0.5 A
ICM Collector Peak Current (tp < 5 ms) 1 A
IBBase Current 0.3 A
IBM Base Peak Current (tp < 5 ms) 0.6 A
Ptot Total Dissipation at Tc = 25 oC20W
T
stg Storage Temp erature -65 to 150 oC
TjMax. Operating Junctio n Te mperature 150 oC
3
2
1
IPAK DPAK
TO -251 TO -252
(Suf fix "- 1") ( Suf fix "T 4")
13
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 6.25
100
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICEV Collector Cut-off
Current (VBE = -1.5V) VCE = 10 00 V
VCE = 10 00 V Tj = 125 oC100
1µA
mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V 1 mA
VCEO(sus) Collector-Emitter
Sustaining Voltage IC = 10 0 mA 450 V
VBEO Collector-Base
Sustaining Voltage IC = 10 mA 5 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 0.1 A IB = 0.01 A
IC = 0.2 A IB = 0.02 A 0.8
1V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 0.2 A IB = 0.02 A 1 V
hFE∗DC Current Ga in IC = 50 mA VCE = 5 V
IC = 40 mA VCE = 5 V 12 50
fTTransition Frequency IC = 50 mA VCE = 10 V f=1MHz 20 MHz
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
VCC = 250 V IC = 200 mA
IB1 = 40 mA IB2= -80 mA
tp = 20 µs4.5
0.5 µs
µs
∗ P ulsed: P ulse durati on = 300 µs, duty cycle 1.5 %
Safe O perat ing Area Der ating Curves
BUXD87
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DC Current Gain
Col lector Emitter Saturation Voltage
Reverse Biased SOA
DC Current Gain
Base Em itt er Saturation Volt age
BUXD87
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A3 0.70 1.30 0.028 0.051
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
B3 0.85 0.033
B5 0.30 0.012
B6 0.95 0.037
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.237 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 15.90 16.30 0.626 0.642
L 9.00 9.40 0.354 0.370
L1 0.80 1.20 0.031 0.047
L2 0.80 1.00 0.031 0.039
V1 10
o
10
o
P032N_E
TO-251 (IPAK) MECHANICAL DATA
BUXD87
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
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