The documentation and process conversion measures INCH-POUND necessary to comply with this revision shall be completed by 16 November 1994 MIL-S-19500/159H 16 May 1994 SUPERSEDING MIL-S-19500/159G 22 January 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N821, 1N823, 1N625, 1N827, 1N829, AND 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, INS21UR-1, 1N823UR-1, INB25UR-1, 1N827UR-1, AND 1N8Z9UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, Hy JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H This specification is approved for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for 6.2 volts 25 percent, silicon, voltage-reference diodes. Four Levels of product assurance are provided for each encapsulated device type as specified in MIL-S-19500, and two levels of product assurance for each unencapsulated device type die. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-S-19500, and two levels of product assurance for each unencapsulated device type die. 1.2 Physical dimensions. See figure 1 (DO-7 and DO-35), figure 2 (DO-213AA), figure 3 (JANHCA and JANKCA), and figure 4 (JANHCB and JANKCB). 1.3 Maximum ratings (T, = +25C, unless otherwise specified). P; Tsta and T,, Low Power derating above T, = 25C thd sc mA_dc ml / C 500 -65 to +175 70 3.33 1.4 Primary electrical characteristics. +25C unless otherwise specified. Primary electrical characteristics at T, = AV, Zz, V, Ip Type (voltage - I, = 7.5 mA de temperature 1, = 7.5 m de V, = 3.0 V stability Min Max mvV_de obms. volts volts HA 1N821, 1N821-1, 1N821UR-1 %6 15 5.89 6.51 2.0 1N823, 1N823-1, 1N823UR-1 48 15 5.89 6.51 2.0 1N825, 1N825-1, IN825UR-1 19 15 5.89 6.51 2.0 1N827, 1N827-1, 1N827UR-1 9 15 5.89 6.51 2.0 1N829, 1IN829-1, IN329UR-1 5 15 5.89 6.51 2.0 Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: ATIN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH 45444-5765 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. Commander, Defense Electronics Supply Center, AMSC N/A DISTRIBUTION STATEMENT A. M 09000125 0035029 631 MENILS Approved for public release; distribution is unlimited. FSC 5961MIL-S-19500/159H 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARDS MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Defense Printing Service Detachment Office, Building 4D (Customer Service), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated detail specification. The individual item requirements shall be in accordance with MIL-S-19500 and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-$-19500 and as follows: UR. ww ee ee ee ee Unleaded or surface mounted devices (round end caps). JANH 2 6 ww we eee es High reliability product assurance level for unencapsulated devices. JANK 2. 2 1 ww ew ew ew Space reliability product assurance level for unencapsulated devices. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-S-19500 and on figures 1, 2, 3, and 4 herein. 3.3.1 Lead finish. Lead finish shall be solderable as defined in MIL-S-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.3.2 Dash-one construction. These devices shall be category I or II metallurgical bonding in accordance with MIL-S-19500, 3.3.3 JANS construction. Construction shall be dash-one, category I or If metallurgical bond in accordance with MIL-S-19500, appendix A, 30.14.2 and 30.14.4. 3.3.4 JANC construction. JANC construction may differ in die size and bonding pad layout provided the manufacturing technology is identical (example: diffused junction, alloy junction). 3.4 Marking. Marking shail be in accordance with MIL-S- 19500. 3.4.1 Marking of "UR" version devices. For "UR" version devices only, all marking (except polarity) may be omitted from the body, but shall be retained on the initial container. me 0000125 0035030 353 MBNILSMIL-S-19500/159H PTE iy Dimensions Symbol Inches Millimeters Notes Min Max Min Max 98 -018 -023 0.46 0.58 3,4 ro) -060 -107 1.52 2.72 5 G - 120 -300 3.05 7.62 L 1.000 | 1.500 | 25.40 | 38.10 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. The specified lead diameter applied in the zone between .050 inch (1.27 mm) and 1.0 inches (25.40 mm) from the diode body. Outside of this zone the lead diameter is not controlled. 4. Both teads shall be within the specified dimension. 5. The minimum body diameter shall be maintained over .15 inch (3.8 mm) of body length. FIGURE 1. Physical dimensions, 1N821, 1N823, _1N825, 1NB27, 1N829, 1N821-1, 1NB23-1, IN825-1, INS27-1, IN829-1 (DO-35 and 00-7). M@@ 0000125 0035031 257 MEMILSMIL-S-19500/159H OD G Dimensions Symbo | Inches Millimeters Min Max Min Max go -063 .067 1.60 1.70 F -016 022 0.41 0.56 G 130 .146 | 3.30 3.71 G, .100 Ref 2.54 Ref $s .001 Min 0.03 Min NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions, 1N821UR-1, INS23UR-1, IN8S25UR-1, INB27UR-1_ and 1N829UR-1 (DO-213AA). @@ 0000125 0035032 1ecb MMNILSMIL-S-19500/159H Qui Y; M 2 1 MOOMAAY < Dimensions Inches Millimeters Symbol Min Max Min Max A 0280 | .0320 | .711 -813 B .0080 | .0100 | .203 256 c -0104 | .0106 | .264 269 D -0019 | .0021 | .048 -053 E -0054 | .0056 | .137 142 F -0020 | .0040 | .050 102 G -0280 | .0320 | .711 813 H -0030 | .0050 | .076 127 J -0030 | .0050 | .076 127 K 0209 | .0211 | .531 -536 L 0080 | .0100 | .203 -254 M -0104 | .0106 | .264 269 N -0059 | .0061 | .150 155 W BACKSIDE MUST BE ELECTRICALLY ISOLATED GESIGN DATA Metal lization: Top: 1 (Cathode) 2 (Anode) . 3 (Test pad) Back . 2... ww ee Al thickness... Gold thickness ...... Chip thickness .... NOTES: ~.. Al . Al Al - Au Circuit layout data: For zener operation, cathode must be operated positive with respect anode. - + 25,000A minimum 4,000A minimum 0.010 inch (0.254 mm) 0.002 inch (0.051 mm). 1. Dimensions are in inches unless otherwise indicated. 2. Metric equivalents are given for general information only. FIGURE 3. M 0000125 0035033 Obe MBNILS JANHC and JANKC (A-version) die dimensions.MIL-S-19500/159H 4 A <<< Z ANODE Cpr: MXN MX {U_QQ@CB - BACKSIDE IS CATHODE es | Dimensions Inches Millimeters Symbol Min Max Min Max A 024 .028 -61 71 B .014 .018 38 46 DESIGN DATA Metal lization: Circuit layout data: Top: (Anode) ...- For zener operation, cathode must be operated positive with respect anode. Back... 2. ees a. Al thickness ..... Gold thickness ..... Chip thickness .... NOTES: 1. Dimensions are in inches. Al Au 40,000A minimum 5, 000A minimum 0.010 inch (0.254 mm) +0.002 inch (0.051 mm). 2. Metric equivalents are given for general information. 3. Requirements in accordance with MIL-S-19500 (appendix H) are performed in a TO-5 package (see 6.5). FIGURE 4. JANHC and JANKC (B-version) die dimensions. M@ 0000125 0035034 TTT MEMILSMIL-S-19500/159H 3.4.2 Designation of JANHC and JANKC die. For JANHC and JANKC die, the following designations shall be used (example): JANHCAM1N821 Tttt jE RHA level (see MIL-S-19500). Source of manufacturer (see figure 3). Unencapsul ated. Product assurance level 1/. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein except lot accumulation requirement shall be six months in lieu of six weeks. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-S-19500. 4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-S-19500 and table Il herein. 4.2.2 JANHC and JANKC devices. Qualification for JANHC and JANKC devices shall be in accordance with appendix H of MIL-S-19500. 4.3 Screening (JANS, JANTX, AND JANTXV Levels only). Screening shall be in accordance with table II of MIL-$-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurement Screen (see table II of MIL-S-19500) JANS level JANTX and JANTXV Levels 1 V2, Zz, and I, Vz, 22, and I, 12 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table | Subgroup 2 of table I herein; herein; AZ, < +2.25 ohms of AZ, < 2.25 ohms of initial initial reading. reading. at T, = +25C 2C at T, = +25C 42C AV, < 24 mV de from AV, < #4 mV de from initial value for initial value for 1N821, 1N821, 1N821-1, 1N821UR-1, 1N821-1, 1N821UR-1, 1N8&23, 1N823, 1N823-1, 1N823UR-1, 1N823-1, 1N823UR-1, 1N825, 1N825, 1N825-1, and 1N825UR-1. 1N825-1, and 1N825UR-1. AV, $ 3 mV de from initial AV, $ 23 mV de from initial value for 1N827, 1N827-1, value for 1N827, 1N827-1, 1N827UR-1, 1N829, 1N829-1, IN827UR-1, 1N829, 1N829-1, and 1N829UR-1. and 1N&29UR-1. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: 1, 2 7.5 mA de, +0.75 mA de, -0 m de, T, = 150 45C, -0C. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with appendix H of MIL-S-19500. 4/ Two levels of product assurance levels are provided for unencapsulated devices, H and K (see MIL-S-19500.MIL-S-19500/159H 4.4 Quality conformance inspection. Quality conformance inspection shall be in accordance with MIL-S-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-S-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table IVa (JANS) and table IVb (JAN, JANTX and JANTXV) of MIL-S-19500. Electrical measurements (end-points) shall be in accordance with the applicable steps of table 1, subgroup 2 herein. 4.4.2.1 Group B inspection, table IVa (JANS) of MIL-S-19500. Subgroup Method Conditions B3 1071 Test condition E. B4 1037 1, = 7.5 mA de at T, = +150C; t,, = toy = 3 minutes minimum for 2,000 cycles. No forced air cooling on the device shall be permitted. Paragraph 3, delta case temperature does not apply. BS 1027 I, = 7.5 ma de for 1,000 hours. T, = +150C. 4.4.2.2 Group B inspection, table [Vb (JAN, JANTX and JANTXV) of MIL-$-19500. Subgroup Method Conditions B2 1071 Test condition E. 83 1027 T, = +150C and I, = 7.5 mA dc. NOTE: When group C (subgroup 6) is required, group B (subgroup 3) is not required for that lot. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table V of MIL-S-19500. Electrical measurements (end-points) requirements shail be in accordance with the applicable steps of table 1, subgroup 2 herein. 4.4.3.1 Group C inspection, table V of MIL-S-19500. Subgroup Method Conditions c2 2036 Lead tension: 4 pounds weight, t = 15 #3 seconds; test condition A. Not applicable to "UR" version devices. Lead fatigue: Test condition E, not applicable to "UR" version devices. c2 1071 Test condition E. C6 1026 T, = +100C and I, = 7.5 mA de (see 4.5.2). 4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with MIL-S-19500 and table Il herein. MIL-S-19500, appendix G is not required when homogeneous product of radiation hard assembly (per applicable 360 form) is submitted and successfully passes group D sampling of total dose at an outside facility compliant to MIL-STD-750, method 1019. Submitted lots for group D sample inspection must be constructed using one homogeneous wafer lot for the zener and one wafer lot for the compensating die (die), as also described in the submitted 360 forms. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.MIL-S-19500/159H 4.5.1 Voltage-temperature stability. The breakdown voltage of each diode type shall be measured and recorded at each of the specified temperatures. The lowest measured voltage shall be subtracted from the highest measured voltage for each diode. The difference value obtained shall not exceed the specified AV, per diode type. 4.5.2 Reference voltage time stability. The breakdown voltage shall be measured prior to life testing at 500 hours, and at the conclusion of the life test. The 340-hour reading shall be compared with the O-hour reading and the 1,000-hour reading compared with the 340-hour reading. The change in breakdown voltage shalt not exceed the limits specified. Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Reference-voltage time Ta = +100C #2C AV, stability (see 4.5.2 and 4.5.3) 1, = 7.5 0.01 mA de 1N821, 1N821-1, iN821UR-1 (0 to 340 hours) 7 mV de 1N823, 1N823-1, 1N823UR-1 7 mV de 1N825, 1N825-1, 1N825UR-1 7 mV de 1N827, 1N827-1, IN827UR-1 6 mV de 1N829, 1N829-1, IN829UR-1 5 mV de 1N821, 1N821-1, 1N821UR-1 (340 to 1,000 hours) 4 mV dc 1N823, 1N823-1, 1N823UR-1 4 mV de 1N825, 1N825-1, 1N825UR-1 4 mV de 1N827, 1N827-1, IN827UR-1 3 mV de 1N829, 1N829-1, INS29UR-1 3 mV de 4.5.3 Reference voltage. The test current shall be applied until thermal equilibrium is attained (15 seconds minimum) prior to reading the reference voltage. for this test, the diode shall be suspended by its leads with mounting clips whose inside edge is located between 0.375 inch (9.53 mm) and 0.500 inch (12.70 mm) inch from the body and the mounting clips shall be maintained at the specified temperature. This measurement may be performed after a shorter time following application of the test current than that which provides thermal equilibrium if correlation to stabilized readings can be established to the satisfaction of the Government. Mi 0000125 0035037 7048 MMMILSMIL-S-19500/159H TABLE I. Group A inspection. MIL-STD-750 Limits Inspection 1/ Symbol Unit Method Conditions Min Max Subgroup_1 Visual and mechanical 2071 examination Subgroup 2 Reference voltage 4022 I, = 7.5 20.01 mA de Vv, 5.89 6.51 V de (see 4.5.3) Small-signal 4051 I, = 7.5 #0.01 mA de Z, 15 Q breakdown impedance Ij, = 0.75 mA ac Reverse current 4016 DC method; V, = 3.0 V de Ig 2.0 HA leakage Subgroup 3 Vol tage- temperature 1, = 7.5 0.01 mA de AV, stability (see T, = 55C, OC. 425C, +75C, 4.5.1 and 4.5.3) #100C #2C 1N821, 1N821-1, 96 mV de 1N821UR-1 1N823, 1N823-1, 48 mV de INS23UR-1 1N825, 1N825-1, 19 mV de 4NB25UR-1 {N827, 1N827-1, 9 mV dc 1N827UR-1 1N829, 1N829-1, 5 mV de iN829UR-1 Subgroups 4, 5, and 6 Not applicable 4/ For sampting plan, see MIL-S-19500. mM 0000325 0035038 644 MBMILSMIL-S-19500/159H TABLE II. Group D inspection. Inspection MIL-STD-750 Symbol |Pre-irradiation |Post-irradiation |AVz, Unit iV limits limits Pre-Post Taman change Method | Conditions M, 0, R andl M, 0, R and H Min Max Min Max Min Max Subgroup_4 Not applicable Subgroup 2 To = 425C Steady-state 1019 I, = 7.5 total dose 20.01 mA de irradiation Condition A Reference 4022 |1, = 7.5 Vz 5.89 |6.51 5.89 |6.51 v de voltage +0.01 mA de (see 4.5.3) Small-signal 4051 I, = 7.5 2, 15 15 ohms breakdown 20.01 mA dc impedance Iu, = 0.75 ac Reverse current | 4016 DC method; I, 2.0 2.0 BA leakage V, = 3.0 V de Voltage 4022 1, = 7.5 Av, stability 0.01 mA de (see 4.5.3) T, = 25C 2C 1N821, 1N821-1 3.0 {mv 1N821UR-1 1N823, 1N823-1 3.0 |mV 1N823UR-1 1N825, 1N825-1 2.0 [mv 1N825UR-1 1N827, 1N827-1 21.5 |mv INS27UR-1 1N829, 1N829-1 +1.0 |mv 1N829UR-1 1/ For sampling plan, see MIL-S-19500. M@@ 0000125 0035035 540 MEMILSMIL-S-19500/159H TABLE II. Group E inspection (all quality levels) for qualification only. Electrical measurement Subgroup 3 Not applicable Subgroups 4, 5 and 6 Not applicable 1, = 7.5 m de T, = +150C See table 1, subgroup 2 MIL-STD-750 Inspection Sampling plan 1/ Method Conditions Subgroup 1 22 devices Thermal shock 1051 500 cycles c=0 temperature cycling Electrical measurement See table I, subgroup 2 Subgroup _2 22 devices Steady-state de life 1038 Candition B; 1,000 hours c=0 4/ For sampling plans not specified, see MIL-S-19500. M@ 0000125 0035040 eTe MMILS 12MIL-S-19500/159H 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-S-19500. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. ) 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Acquisition requirements. a. Issue of DODISS to be cited in the solicitation. b. Lead finish as specified (see 3.3.1). Acquisition documents should specify the following: . Product assurance tevel, type designator and for die acquisition, the JANHC or JANKC letter version shall be specified (see figures 3 and 4). 6.3 Suppliers of JANC die. The qualified JANC suppliers with the applicable letter version (example JANHCAMIN821) will be identified on the QPL. JANC ordering information Manufacturer PIN 55801 55801 12954 12954 Radiation Radiation designators designators M,0,L,R,F,G,H M,0,L,R,F,G,# 1N821 JANHCA1N821 JANHCA1N821 JANHCB1N821 JANHCB1N821 JANKCA1N821 JANKCA1N821 JANKCB1N821 JANKCBIN&21 1N823 JANHCA1N823 JANHCAINS23 JANHCB1N823 JANHCB1IN8S23 JANKCA1N823 JANKCA1N&23 JANKCBINS23 JANKCB1N823 1N825 JANHCA 1N825 JANHCAINS25 JANHCB1IN825 JANKCBINS25 JANKCA1N825 JANKCA1N825 JANKCBIN825 JANKCB1N825 1N827 JANHCA1N827 JANHCA1NS27 JANHCBIN827 JANHCBINS27 JANKCA1N8S27 JANKCA1N827 JANKCBINS27 JANKCB1IN8S27 1N829 JANHCA1N8B29 JANHCAIN8&29 JANHCB1N829 JANHCB 1N829 JANKCAINS29 JANKCAINE29 JANKCB1IN829 JANKCBINS29 6.4 Substitution of radiation hardened devices. See MIL-S-19500. 6.5 Substitution of AV, devices. Device types within this series with higher type numbers (lower AV.) are a direct omeway substitution for lower type numbers (higher AV,). 6.6 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. @@ 0000125 0035041 139 MEMILS 13MIL-S-19500/159H CONCLUDING MATERIAL Custodians: Preparing activity: Army - ER DLA - ES Navy - EC Air Force ~ 17 Agent: NASA - NA OLA - ES Review activities: (Project 5961-1577) Army - AR, MI, SM Navy - AS, CG, MC Air Force - 19, 85, 99 OLA - ES MM 0000125 003504e O75 MENILS