© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 100V - 600V > MCR72-3, MCR72-6, MCR72-8
• Center Gate Geometry for Uniform Current Density
• All Diffused and Glass-Passivated Junctions for Parameter
Uniformity and Stability
• Small, Rugged Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Low Trigger Currents, 200 A Maximum for Direct Driving
from Integrated Circuits
• These are Pb−Free Devices
Features
Designed for industrial and consumer applications such as
temperature, light and speed control; process and remote
controls; warning systems; capacitive discharge circuits
and MPU interface.
Description
MCR72-3, MCR72-6, MCR72-8
Functional Diagram
K
G
A
Pb
Additional Information
Samples
Resources
Datasheet
Pin Out
CASE 221A
STYLE 4
12
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 100V - 600V > MCR72-3, MCR72-6, MCR72-8
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(− 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
MCR72-3
MCR72-6
MCR72-8
VDRM,
VRRM 100
400
600
V
On-State RMS Current
(180º Conduction Angles; TC = 83ºC) ITM (RMS) 8.0 A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110 °C ITSM 100 A
Average On-State Current
(180º Conduction Angles; TC = 83ºC) IT(AV) 8.0 A
Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A²s
Forward Peak Gate Voltage (Pulse Width ≤ 10 µsec, TC= 83°C) VGM ±5.0 V
Forward Peak Gate Current (Pulse Width ≤ 10 µsec, TC= 83°C) IGM 2.0 A
Forward Peak Gate Power (Pulse Width ≤ 10 µsec, TC= 83°C) IGM 20 W
Average Gate Power (t = 8.3 ms, TC = 83ºC) PG(AV) 0.75 W
Operating Junction Temperature Range TJ-40 to +110 °C
Storage Temperature Range Tstg -40 to +150 °C
Mounting Torque −8.0 in. lb.
Maximum Ratings (TJ = 25°C unless otherwise noted)
Thermal Characteristics
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Case R8JC 2.2 °C/W
Thermal Resistance, Junction−to−Ambient R8JA 60
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for
10 Seconds TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of
the devices are exceeded.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 100V - 600V > MCR72-3, MCR72-6, MCR72-8
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1 kΩ)
TJ = 25°C IDRM,
IRRM
- - 10
µA
TJ = 110°C - - 500
High Logic Level Supply Current from VCC ICCH 4 4 µA
Dynamic Characteristics
Characteristic Symbol Min Typ Max Unit
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, RGK = 1 kΩ, Exponential Waveform, Gate Open, TJ = 110ºC) dv/dt _ 10 − V/µs
Characteristic Symbol Min Typ Max Unit
Peak Forward On−State Voltage
(ITM = 16 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%) VTM _ _ 2.0 V
Gate Trigger Current (Continuous dc) (Note 3) (VD = 12 V; RL = 100 Ω) IGT _ 30 200 µA
Gate Trigger Voltage (Continuous dc) (Note 3) (VD = 12 V; RL = 100 Ω) VGT _ 0.5 1. 5 V
Gate Trigger Non-Trigger Voltage (VD = 12 Vdc, RL = 100 Ω, TJ = 110°C) VGD 0.1 _ _ V
Holding Current
(VD = 12 V, Initiating Current = 200 mA, RGK = 1kΩ)
IH_ _ 6.0 mA
Gate Controlled Turn-On Time (Note 5)
(VD = Rated VDRM, ITM = 16 A, IG = 2 mA) tgt _1. 0 _ µs
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different conditions.
2. Ratings apply for negative gate voltage or RGK = 1 Ω. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices
should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
3. RGK current not included in measurement.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 100V - 600V > MCR72-3, MCR72-6, MCR72-8
Voltage Current Characteristic of SCR
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage
IHHolding Current
+C urrent
+V oltage
VTM
IDRM at VDRM
IH
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
IRRM at VRRM
(off state)
Figure 1. Average Current Derating Figure 2. On−State Power Dissipation
60°
IT(AV)
00
4.0
AV
α = 30°
90°
dc
8.06.04.02.0
8.0
12
16
α = Conduction Angle
α180°
Figure 4. Gate VoltageFigure 3. Normalized Gate Current
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 100V - 600V > MCR72-3, MCR72-6, MCR72-8
Dimensions Part Marking System
Pin Assignment
1 Cathode
2 Anode
3 Gate
4 Anode
Ordering Information
Device Package Shipping
MCR72−3G
TO−220AB
(Pb−Free)
500 Units / Box
MCR72−6G
MCR72−6TG 50 Units / Box
MCR72−8G 500 Units / Box
MCR72−8TG 50 Units / Box
12 3
4
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND
LEAD IRREGULARITIES ARE ALLOWED.
Dim
Inches Millimeters
Min Max Min Max
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1. 15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1. 15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1. 1 5 −−−
Z −−− 0.080 −−− 2.04
A= Assembly Location
Y= Year
WW =W ork Week
x = 3, 6, 8, or 8T
AKA= Diode Polarity
A= Assembly Location
Y= Year
WW = Work Week
Device Code
G
AKA= Diode Polarity
AY WW
AKA
AY WW
AKA
123
ISSUE O ISSUE AH
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test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics
