2 1 3 4 2 1 3 4 Anti-Paralle l P aralle l APT2X100D40J APT2X101D40J 2 3 1 4 SO 2 T- 27 "UL Recognized" IS OT OP (R) file # E145592 APT2X101D40J APT2X100D40J 400V 100A 400V 100A DUAL DIE ISOTOP(R) PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS * Anti-Parallel Diode * Ultrafast Recovery Times * Low Losses * Soft Recovery Characteristics * Low Noise Switching * Popular SOT-227 Package * Cooler Operation * Low Forward Voltage * Higher Reliability Systems * High Blocking Voltage * Increased System Power * * * * * -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers * Low Leakage Current All Ratings: TC = 25C unless otherwise specified. MAXIMUM RATINGS Symbol VR APT2X101_100D40J Characteristic / Test Conditions Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 112C, Duty Cycle = 0.5) IFSM TJ,TSTG UNIT Maximum D.C. Reverse Voltage VRRM IF(RMS) Density 400 Volts 100 164 RMS Forward Current (Square wave, 50% duty) Amps 1000 Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) -55 to 175 Operating and StorageTemperature Range C STATIC ELECTRICAL CHARACTERISTICS VF MIN Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V TYP MAX IF = 100A 1.3 1.5 IF = 200A 1.6 IF = 100A, TJ = 125C 1.2 VR = VR Rated Microsemi Website - http://www.microsemi.com Volts 500 VR = VR Rated, TJ = 125C 1000 260 UNIT A pF 053-4007 Rev G 3-2011 Symbol APT2X101_100D40J DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J - 37 trr Reverse Recovery Time - 50 Qrr Reverse Recovery Charge - 150 - 6 - 150 ns - 1050 nC - 13 - 90 - 2100 - 39 MIN TYP IRRM Reverse Recovery Time Qrr Reverse Recovery Charge IF = 100A, diF/dt = -200A/s VR = 268V, TC = 125C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 268V, TC = 25C Maximum Reverse Recovery Current trr IRRM IF = 100A, diF/dt = -200A/s IF = 100A, diF/dt = -800A/s VR = 268V, TC = 125C Maximum Reverse Recovery Current ns nC 7 17 Amps Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MAX RJC Junction-to-Case Thermal Resistance .42 RJA Junction-to-Ambient Thermal Resistance 20 WT Torque Package Weight oz 29.2 g 10 lb*in 1.1 N*m Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.7 0.30 0.25 0.5 Note: 0.20 P DM Z JC, THERMAL IMPEDANCE (C/W) 0.45 0.35 0.3 0.15 t1 t2 0.10 t Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C 0.1 0.05 SINGLE PULSE 0.05 0 10-5 10-4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-4007 Rev G 3-2011 C/W 1.03 Maximum Terminal & Mounting Torque 0.40 UNIT APT2X101_100D40J TYPICAL PERFORMANCE CURVES 160 IF, FORWARD CURRENT (A) 250 200 150 100 0 TJ = 25C TJ = 125C 50 TJ = 150C trr, REVERSE RECOVERY TIME (ns) 300 0.5 1 1.5 2 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 80 60 40 T =125C J V =268V R 400 600 800 1000 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change 0 200 40 T =125C J V =268V R 2000 200A 1500 50A 1000 100A 500 0 200 400 600 800 1000 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 50A 100 0 0 0 200A T =125C J V =268V 35 R 100A 30 25 20 50A 15 10 5 0 400 600 800 1000 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 0 200 200 1.4 1.2 Duty cycle = 0.5 T =150C 180 Qrr J 160 trr 1.0 140 0.8 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 800A/s) 100A 120 20 TJ = -55C 2500 trr 0.6 IRRM 0.4 Qrr 0.2 0.0 200A 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 2500 2000 1500 1000 500 0 .3 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4007 Rev G 3-2011 CJ, JUNCTION CAPACITANCE (pF) 3000 APT2X101_100D40J Vr diF /dt Adjust +18V APT50M50L2LL 0V D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places ) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 0.75 (.030) 0.85 (.033) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 053-4007 Rev G 3-2011 30.1 (1.185) 30.3 (1.193) Anode 2 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) Anti-paralle l P aralle l APT2X100D40J APT2X101D40J Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2