ky SGS-THOMSON BU208/508/508FI MICROELECTRONICS BU208A/508A/508AFI HORIZONTAL TVC DEFLECTION a HIGH VOLTAGE a HIGH POWER a HIGH SWITCHING SPEED a GOOD STABILITY a CONSUMER a POWER SUPPLY a TV COLOR HORIZONTAL DEFLECTION TO-3 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM c DESCRIPTION 8 The BU208/A, BU508/A and the BUSO8FI/VAFI are silicon multiepitaxial mesa NPN transistors. NPN E They are respectively in Jedec TO-3 metal case in So bene TO-218 plastic case and in ISOWATT218 fully isolated package. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Veces Collector-emitter Voltage (Vge = 0) 1500 Vv Vceo | Collector-emitter Voltage (Ig = 0) 700 v VeBo Emitter-base Voltage (Ic = 0) 10 Vv lo Collector Current 8 A fom Collector Peak Current 15 A TO-3 TO-218 ISOWATT218 Prot Total Dissipation at T, = 25C 150 125 60 W Tstg Storage Temperature I 65 to 175j- 65 to 150) 65 to 150 C Tj Max. Operating Junction Temperature 175 150 150 C December 1988 1/4 267BU208/508/508FI-BU208A/508A/S08AFI Figure 1 : Switching Times Test Circuit on Inductive Load. 0.9 mH 270 COSTS Occ R102 nr ow 1SKV ad co 10pF Vy 56n 22pF ew Coot Le YuT 0.047 ur 3 a 270 620 g '!' aps | i 100 B0135 v t 64us 1 It ' i queen 10NF InF R102 T wy 4 O $7635 ISOWATT218 PACKAGE CHARACTERISTICS AND APPLICATION ISOWATT218 is fully isolated to 4000V dc. Its ther- mal impedance, given in the data sheet, is optimi- sed to give efficient thermal conduction together with excellent electrical isolation. The structure of the case ensures optimum distances between the pins and heatsink. These distances are in agree- ment with VDE and UL creepage and clearance standards. The ISOWATT218 package eliminates the need for external isolation so reducing fixing hardware. The package is supplied with leads longer than the standard TO-218 to allow easy mounting on pcbs. Accurate moulding techniques used in manufacture assures consistent heat spreader-to-heatsink capa- citance. ISOWATT218 thermal performance is equivalent to that of the standard part, mounted with a 0.1mm mi- ca washer. The thermally conductive plastic has a higher break- down rating and is less fragile than mica or plastic sheets. Power derating for |SOWATT218 packages is de- termined by : Ty-Te Pp = Rth THERMAL IMPEDANCE OF ISOWATT218 PACKAGE Figure 2 illustrates the elements contributing to the thermal resistance of a transistor heatsink assem- bly, using ISOWATT218 package. The total thermal resistance Riritoy is the sum of each of these elements. The transient thermal impedance, Zin for different 3-For long power pulses of the order of 500ms seconds or greater : Zth = Rinu-c + Rthc-Hs + Rints-amb It is often possible to discern these areas on trans- ient thermal impedance curves. pulse durations can be estimated as follows : Figure 2. 1-For a short duration power pulse ofless than 1ms : Rihu-c Rtho-HS BthHS-amb Zin < Rinse AINA AI 2-For an intermediate power pulse of Sms seconds : 2th = Rths-c fa = hyp SiS romans 268BU208/508/508F1I-BU208/508A/508AFI THERMAL DATA TO-3 TO-218 ISOWATT218| Rtnj case | Thermal Resistance Junction-case Max 1 1 2.08 C/W ELECTRICAL CHARACTERISTICS (Tease = 25C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. | Unit logs Collector Cutoff Current Voce =Vces To = 125C 1 1 mA (Vee =0) Vce = Vces 2, mA leso Emitter Cutoff Current Veg = 5V 100 HA (Ic = 0) Veedsus}'| Collector Emitter Sustaining | tc = 100mA 700 Vv Voltage VeEBo Emitter-base Voltage (Ic = 0}} Ie = 10mA 10 Vv Vceisat) | Collector-emitter Saturation lc =4.5A lg =2A Voltage for BU208A/5084508AFI| 1 Vv for BU208/508508FI 5 Vv Vepesa:)" | Base-emitter Saturation lo =4.5A lg =2A 1.3 Vv Voltage fr Transition Frequency Ilo =O0.1A Vee =5V f =5MHz 7 MHz INDUCTIVE LOAD Symbol Parameter Test Conditions Min. Typ. Max. Unit. ts Storage Time Ic = 4.5A hee = 2.5 Voc = 140V 7 Ls tr Fall Time Le = 0.9MH Lg = 3H 0.55 Ls * Pulsed : pulse duration = 300 us. duty cycle = 1.5 %. Safe Operating Area (TO-3). Ie 8 (ae lg MAX PULSED : 10 MAX CONT. SINGLE NON 1 REPETITIVE PULSE : ; 100ns io"! Ims = 5ms O.C.OPERATION Safe Operating Area (TO-218/ISOWATT218)}. G-5772 4 68 Vogt) DURATION ee Veel) ala scGs- Ky7 SES-THOMSON 269BU208/508/508F1i-BU208A/508A/508AF} DC Current Gain. Switching Time (nductive Load. Gc-03490 7 this) 5 ol | 2 3 4 5 iil Base-emitter Saturation Voltage. Collector-emitter Saturation Voltage. (v) 08 06 O4 0.2 0 ol ! IgA) 0.1 i gta) Switching Time Inductive Load. Hus) 5 a5 | 2 3 4 5 gt) 3/4 (7 SGS-THOMSON i MICROELECTROMICS 270