4N32/ 4N33 VISHAY Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection Features * Very high current transfer ratio, 500 % Min. * High isolation resistance, 1011 Typical * Standard plastic DIP package Agency Approvals * UL File #E52744 System Code H or J * DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * BSI IEC60950 IEC60965 Description A 1 6 B C 2 5 C NC 3 4 E i179005 Order Information The 4N32 and 4N33 are optically coupled isolators with a gallium arsenide infrared LED and a solicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Part Remarks 4N32 CTR > 500 %, DIP-6 4N33 CTR > 500 %, DIP-6 4N32-Xxx7 CTR > 500 %, SMD-6 (option 7) 4N32-Xxx9 CTR > 500 %, SMD-6 (option 9) 4N33-Xxx7 CTR > 500 %, SMD-6 (option 7) 4N33-Xxx9 CTR > 500 %, SMD-6 (option 9) For additional option information and package dimensions see Option Section. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Peak reverse voltage Parameter Test condition VR 3.0 V Forward continuous current IF 60 mA Pdiss 100 mW 1.33 mW/C Power dissipation Derate linearly from 55 C Unit Output Symbol Value Unit Collector-emitter breakdown voltage Parameter BVCEO 30 V Emitter-base breakdown voltage BVEBO 8.0 V Collector-base breakdown voltage BVCBO 50 V Emitter-collector breakdown voltage BVECO 5.0 V Document Number 83736 Rev. 1.2, 04-Dec-03 Test condition www.vishay.com 1 4N32/ 4N33 VISHAY Vishay Semiconductors Parameter Test condition Symbol Value IC 125 mA Pdiss 150 mW 2.0 mW/C Collector (load) current Power dissipation Derate linearly Unit Coupler Parameter Test condition Symbol Value Unit Ptot 250 mW 3.3 mW/ VISO 5300 VRMS Leakage Path 7.0 mm min. Air Path 7.0 mm min. Total dissipation Derate linearly Isolation test voltage (between emitter and detector, Standard Climate: 23 C/ 50 %RH, \\nDIN 500 14) Isolation Resistance VIO = 500 V, Tamb = 25 C RIO 1012 VIO = 500 V, Tamb = 100 C RIO 10 11 Storange temperature Tamb - 55 to + 150 C Operating temperature Tstg - 55 to + 100 C 10 s Lead soldering time at 260 C Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Test condition IF = 50 mA Symbol Typ. Max Unit VF Min 1.25 1.5 V 100 Reverse current VR = 3.0 V IR 0.1 Capacitance VR = 0 V CO 25 pF Output Parameter Collector-emitter breakdown Symbol Min IC = 100 A, IF = 0 Test condition BVCEO 30 Typ. Max Unit V IC = 100 A, IF = 0 BVCBO 50 V IC = 100 A, IF = 0 BVEBO 8.0 V IC = 100 A, IF = 0 BVECO 5.0 VCE = 10 V, IF = 0 ICEO IC = 0.5 mA, VCE = 5.0 V hFE voltage1) Collector-base breakdown voltage1) Emitter-base breakdown voltage1) Emitter-collector breakdown 10 V voltage1) Collector-emitter leakage current 1) 100 nA 13 Indicates JEDEC registered values www.vishay.com 2 1.0 Document Number 83736 Rev. 1.2, 04-Dec-03 4N32/ 4N33 VISHAY Vishay Semiconductors Coupler Parameter Test condition Colector emitter saturation voltage Symbol Min Typ. VCEsat Coupling capacitance Max Unit 1.0 V 1.5 pF Current Transfer Ratio Parameter Test condition VCE = 10 V, IF = 10 mA, Current Transfer Ratio Symbol Min CTR 500 Symbol Min Typ. Max Unit % Switching Characteristics Parameter Test condition Typ. Max Unit Turn on time VCC = 10 V, IC = 50 mA ton 5.0 s Turn off time IF = 200 mA, RL = 180 toff 100 s Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.0 0.8 10 Normalized to: Vce = 5 V IF = 10 mA Ta = 25C NIcb - Normalized Icb NCTRce - Normalized CTRce 1.2 Vce = 5 V 0.6 0.4 0.2 Vce =1V 0.0 .1 1 10 100 1000 Ta = 25C Vcb = 3.5 V IF = 10 mA 1 .1 .01 .001 IF - LED Current - mA .1 i4n32-33_02 1 10 IF - LED Current - mA 100 i4n32-33_04 Figure 1. Normalized Non-saturated and Saturated CTRCE vs. LED Current 1 Normalized to: Ta = 25C IF = 10 mA Vce = 5 V 10000 Vce = 5 V Vce = 1V .1 .01 .001 .1 10 1 IF - LED Current - mA Figure 2. Normalized Non-saturated and Saturated Collectoremitter Current vs. LED Current Rev. 1.2, 04-Dec-03 Ta = 25C Vce = 5 V 8000 6000 4000 Vce = 1 V 2000 0 .01 100 i4n32-33_03 Document Number 83736 Figure 3. Normalized Collector-Base Photocurrent vs. LED Current HFE - Forward Transfer Gain 10 NIce - Normalized Ice Normalized to: .1 1 10 100 Ib - Base Current - A i4n32-33_05 Figure 4. Non-saturated and Saturated HFE vs. Base Current www.vishay.com 3 4N32/ 4N33 VISHAY Vishay Semiconductors 80 tpLH - Low/High Propagation Delay - S Ta = 25C, Vcc = 5V Vth = 1.5 V 1.0 k 60 220 i 40 470 20 100 0 0 5 10 15 20 IF - LED Current - mA i4n32-33_06 Figure 5. Low to High Propagation Delay vs. Collector Load Resistance and LED Current tpHL - High/Low Propagation delay - s 20 1k Ta = 25C Vcc = 5 V Vth = 1.5 V 15 10 100 5 0 0 5 10 15 20 IF - LED Current - mA i4n32-33_07 Figure 6. High to low Propagation Delay vs. Collector Load Resistance and LED Current IF VCC RL VO tD tR VO tPLH tPHL tS IF VTH=1.5 V tF i4n32-33_08 Figure 7. Switching Waveform and Switching Schematic www.vishay.com 4 Document Number 83736 Rev. 1.2, 04-Dec-03 4N32/ 4N33 VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (1.22) .052 (1.32) .039 (1.00) Min. .130 (3.30) .150 (3.81) 18 4 typ. .031 (0.80) min. 3-9 .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .100 (2.54) typ. Option 7 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Option 9 .375 (9.53) .395 (10.03) .300 (7.62) TYP. .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. Document Number 83736 Rev. 1.2, 04-Dec-03 .0098 (.249) .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18494 www.vishay.com 5 4N32/ 4N33 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83736 Rev. 1.2, 04-Dec-03