MICROWAVE POWER GaAs FET TIM5964-35SLA FEATURES BROAD BAND INTERNALLY MATCHED FET HIGH POWER P1dB= 45.5dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB= 9.0dB at 5.9GHz to 6.4GHz LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.0dBm Single Carrier Level HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL ( Ta= 25C ) CONDITIONS UNIT MIN. TYP. MAX. dBm 45.0 45.5 dB 8.0 9.0 A 8.0 9.0 Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point G1dB Drain Current IDS1 Gain Flatness G dB 0.8 Power Added Efficiency 3rd Order Intermodulation Distortion add % 39 dBc -42 -45 Drain Current IDS2 Two Tone Test Po= 35.0dBm, f= 5MHz (Single Carrier Level) A 8.0 9.0 Channel Temperature Rise Tch (VDS X IDS + Pin - P1dB) X Rth(c-c) C 100 UNIT MIN. TYP. MAX. S 6.5 V -1.0 -2.5 -4.0 A 20 V -5 C/W 1.0 1.3 P1dB IM3 VDS= 10V IDSset= 8.0A f = 5.9 to 6.4GHz Recommended Gate Resistance(Rg): 28 ELECTRICAL CHARACTERISTICS CHARACTERISTICS SYMBOL ( Ta= 25C ) CONDITIONS Saturated Drain Current IDSS VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V Gate-Source Breakdown Voltage VGSO IGS= -420A Transconductance Pinch-off Voltage Thermal Resistance gm VGSoff Rth(c-c) Channel to Case The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as "TISS") for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual property right is granted by this document. The information contained herein is subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment incorporating this product. Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170915_No1068 Page: 1/4 MICROWAVE POWER GaAs FET TIM5964-35SLA ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS ( Ta= 25C ) SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 20 Total Power Dissipation (Tc= 25C) PT W 115.4 Channel Temperature Tch C 175 Storage Temperature Tstg C -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C or 3 seconds at 350C. Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170915_No1068 Page: 2/4 MICROWAVE POWER GaAs FET TIM5964-35SLA RF PERFORMANCE Output Power vs. Frequency 47 Po(dBm) 46 VDS= 10 V IDS 8 A Pin= 36.5 dBm 3 6 . 5 45 44 d B m 43 42 5.9 6.0 6.1 6.2 6.3 6.4 Frequency (GHz) Output Power vs. Input Power 90 70 Po(dBm) 46 Po 44 50 42 30 add 10 40 30 add(%) 48 f=6.15 GHz VDS= 10 V IDS 8 A 32 34 36 38 40 Pin(dBm) Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170915_No1068 Page: 3/4 MICROWAVE POWER GaAs FET TIM5964-35SLA Power Dissipation vs. Case Temperature 120 100 PT (W) 80 60 40 20 0 0 40 80 120 160 200 Tc () IM3 vs. Output Power Characteristics -10 VDS=10V IDS 8 A -20 freq.=6.15GHz f=5MHz IM3(dBc) -30 -40 -50 -60 30 32 34 36 38 40 Pout(dBm) @Single carrier level Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170915_No1068 Page: 4/4