MICROWAVE POWER GaAs FET
TIM5964-35SLA
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FEATURES
･BROAD
BAND
INTERNALLY
MATCHED
FET
･HIGH
POWER
P1dB= 45.5dBm at 5.9GHz to 6.4GHz
･HIGH
GAIN
G1dB= 9.0dB at 5.9GHz to 6.4GHz
･LOW
INTERMODULATION
DISTORTION
IM3= -45dBc at Pout= 35.0dBm
Single Carrier Level
･HERMETICALLY
SEALED
PACKAGE
RF
PERFORMANCE
SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT
MIN.
TYP.
MAX.
Output Power at 1dB
Gain Compression Point
P1dB
VDS= 10V
IDSset= 8.0A
f = 5.9 to 6.4GHz
dBm
45.0
45.5
Power Gain at 1dB
Gain Compression Point
G1dB
dB
8.0
9.0
Drain Current
IDS1
A
8.0
9.0
Gain Flatness
G
dB
±0.8
Power Added Efficiency
add
%
39
3rd Order Intermodulation
Distortion
IM3
Two Tone Test
Po= 35.0dBm, f= 5MHz
(Single Carrier Level)
dBc
-42
-45
Drain Current
IDS2
A
8.0
9.0
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
100
Recommended
Gate
Resistance(Rg): 28
ELECTRICAL
CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
UNIT
MIN.
TYP.
MAX.
Transconductance
gm
S
6.5
Pinch-off Voltage
VGSoff
V
-1.0
-2.5
-4.0
Saturated Drain Current
IDSS
A
20
Gate-Source Breakdown Voltage
VGSO
V
-5
Thermal Resistance
Rth(c-c)
°C/W
1.0
1.3
The information contained herein is presented as guidance for product use. No responsibility is assumed by
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for
any infringement of patents or any other intellectual property rights of third parties that may result from the use of
product. No license to any intellectual property right is granted by this document. The information contained herein is
subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment
incorporating this product.
MICROWAVE POWER GaAs FET
TIM5964-35SLA
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170915_No1068 Page: 2 / 4
ABSOLUTE
MAXIMUM
RATINGS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
15
Gate-Source Voltage
VGS
V
-5
Drain Current
IDS
A
20
Total Power Dissipation (Tc= 25°C)
PT
W
115.4
Channel Temperature
Tch
°C
175
Storage Temperature
Tstg
°C
-65 to +175
PACKAGE
OUTLINE (2-16G1B)
Unit in mm
Gate
Source
Drain
HANDLING
PRECAUTIONS
FOR
PACKAGE
MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C.
MICROWAVE POWER GaAs FET
TIM5964-35SLA
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170915_No1068 Page: 3 / 4
RF
PERFORMANCE
42
43
44
45
46
47
5.9 6.0 6.1 6.2 6.3 6.4
Output Power vs. Frequency
Frequency (GHz)
VDS= 10 V
IDS 8 A
Pin= 36.5 dBm 3
6
.
5
d
B
m
Po(dBm)
f=6.15 GHz
VDS
= 10 V
IDS 8 A
Output Power vs. Input Power
Pin(dBm)
Po(dBm)
add(%)
Po
add
30 32 34 36 38 40
48
46
44
42
40
90
70
50
30
10
MICROWAVE POWER GaAs FET
TIM5964-35SLA
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170915_No1068 Page: 4 / 4
IM3 vs. Output Power Characteristics
VDS=10V
IDS 8 A
freq.=6.15GHz
f=5MHz
Pout(dBm) @Single carrier level
0
20
40
60
80
100
120
0 40 80 120 160 200
PT (W)
Tc (℃)
Power Dissipation vs. Case Temperature
30
-10
-20
-30
-40
-50
-60
IM3(dBc)
32
34
36
38
40