MICROWAVE POWER GaAs FET
TIM5964-35SLA
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FEATURES
・BROAD
BAND
INTERNALLY
MATCHED
FET
・HIGH
POWER
P1dB= 45.5dBm at 5.9GHz to 6.4GHz
・HIGH
GAIN
G1dB= 9.0dB at 5.9GHz to 6.4GHz
・LOW
INTERMODULATION
DISTORTION
IM3= -45dBc at Pout= 35.0dBm
Single Carrier Level
・HERMETICALLY
SEALED
PACKAGE
RF
PERFORMANCE
SPECIFICATIONS ( Ta= 25°C )
Output Power at 1dB
Gain Compression Point
VDS= 10V
IDSset= 8.0A
f = 5.9 to 6.4GHz
Power Gain at 1dB
Gain Compression Point
3rd Order Intermodulation
Distortion
Two Tone Test
Po= 35.0dBm, f= 5MHz
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended
Gate
Resistance(Rg): 28
ELECTRICAL
CHARACTERISTICS ( Ta= 25°C )
Gate-Source Breakdown Voltage
The information contained herein is presented as guidance for product use. No responsibility is assumed by
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for
any infringement of patents or any other intellectual property rights of third parties that may result from the use of
product. No license to any intellectual property right is granted by this document. The information contained herein is
subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment
incorporating this product.