GENL INSTR1 OPTOELEK aa eB sacou2a ooo3z0149 7 r 3890128 GENL INSTR, OPTOELEK 88D 03019 OT-4\-83 cia aca r 2 cs rs a ra) on) Bo) -a O.. MCT6 (20%) MCT62 (100% NEW DUALS mete: (50%) MCTBS - 6%) PACKAGE DIMENSIONS DESCRIPTION The MCT6X optoisolators have two channels | XS for high density applications. For four channel ye applications, two-packages fit into a standard 15 MAX 16-pin DIP socket. Each channel is an NPN 6.86 (270) silicon planar phototransistor optically coupled 6.35 (.250} 0.36 (014) to a gallium arsenide infrared emitting diode. | 0.20 (008) FEATURES i i nh 5.65 (380) a 7.62 1.78 (070) REF - Two isolated channels per package 9.14 (360) (300) = Two packages fit into a 16 lead DIP socket REF 2600 voit isolation @ Choice of 4 current transfer ratios 2.54 (100) TYP ! 0.89 (035) TYP = Underwriters Laboratory (U.L.) recognized at File E501514 ; 204/1em) ...t. 3.94 155)" 4.95 (195) |} 3.68 (145), MAX {F386 (140) 9.2) (a20) APPLICATIONS 143.05 (.120) MIN AC Line/Digital Logic Isolate high voltage [ eee mi 090 (035) a Hansionts seal Logie Elien igital Logic/Digital Logic Eliminate spurious 0.56 (022) 2091 grounds 0.41 (.016} DIMENSIONS IN mm (INCHES) Digital Logic/AC Triac Control Isolate high voltage transients = Twisted pair line receiver Eliminate ground loop feedthrough & Telephone/Telegraph line receiver Isolate high voltage transients High Frequency Power Supply Feedback Control Maintain floating ground = Relay contact monitor Isolate floating grounds and transients 2085 = Power Supply Monitor Isolate transients Equivalent Circuit ANODE] cary [2 caTH.[3 ANODE|4| ABSOLUTE MAXIMUM RATINGS Storage Temperature. .......... -55C to 150C OUTPUT TRANSISTOR (each channel) Operating Temperature ......... ~55C to 100C Power dissipation @ 25 & ambient........ 150mWw Lead Temperature ...... (soldering, 10 sec.) 250C Derate linearly from 25C ........,.05 2mW/-C INPUT DIODE (each channel) Collector Current .... 0... cee eee 30mA Forward current... 0.0... eee eee 60mA COUPLED Reverse voltage . 1... 0... eee ee ee 3.0V Input to output breakdown voltage . .2500 volts Vams Peak forward current (1us pulse, 300 pps} ...... 3A Total package power dissipation omw @ 25C ambient ..,.....,.0 00. eee 400m TOTAL INPUT nee vs Power dissipation at 25C ambient........ 100mWw Derate linearly from 25, .........- 5.33mW/"C Derate linearly from 25C ........... 1.8mW/C 1871d wwwegs 44 DE fp s890128 ooos020 3 1-41-83 ELECTRO-OPTICAL CHARACTERISTICS (25C Free Air Temperature Unless Otherwise Specified) CHARACTERISTICS INPUT DIODE ie Rated forward voltage Ve - Reverse voltage Va Reverse current Ip Junction capacitance Cy OUTPUT TRANSISTOR (ip = 0) Breakdown voltage, collector to emitter BVceg Breakdown voltage, . emitter to collector BVeco Leakage current, collector to emitter Iceo Capacitance collector to emitter Cog COUPLED DC current transfer ratio (Ic/Ip) = CTR MCT62 + MCT66 > : Isolation voltage BVi.o) Isolation resistance MCT6X Rio) Breakdown voltage channel-to-channel MCT6X Capacitance between channels Saturation voltage collector to emitter Voe(s at) _ MCT6, 61, 62 MCT66 Bandwidth By SWITCHING TIMES, OUPUT TRANSISTOR Non-saturated rise time, fall time (Note 3) Non-saturated rise time, fall time (Note 3) Saturated turn-on time (from 5.0V to 0.8V} Saturated turn-off time (from saturation to 2.0V) MIN, TYP. MAX, 1.25 1,50 3.0 25 : 004 10 50 30 8 2 -. 6 13 6 100 8 20 50 100 6 2500 10'! 10!? _ 500 0.4 0.2 0.4 0.2 0.4 150 24 15 5 25 UNITS TEST CONDITIONS Vv le = 20mMA Vv In = 10nA pA Va =3.0V pF Ve= OV Vv lc = 1.0mMA Vv le = 100uA nA Veg = 10V pF Vee = OV % Vee = 10V, fp = 10mMA % Voce = 5V, IF =5 mA % Voe=5V,lF=5 mA % Vee = 10V, Ip = 10MA Vrms t= 1 minute Q V,.9 = SOOVDC vbc Relative humidity = 40% f= IMHz pF Vv Ig = 2mA, lp = 16MA v Ic = 2mA, tr = 40mMA kHz Ig = AMA, Veg = 10V, R, = 1002 us Ig = 2MA, Vee = 10V, R, = 1002 BS Io = 2MA, Vee = 10V, Ri =1KQ US R_ = 2K, tp = 40mA us RL = 2KQ, lp = 40mA MCT6 TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25C Free Air Temperature Uniess Otherwise Specified) 50 a 5 E s t 40 Ke w Z 2 we gE & a 5 #0 g o z Fa 3 = E 20 & a 5 a Ee a a Oo a 2 10 U r 5 2 a 0 2 0 10 20 30 40 50 _ Vee COLLECTOR VOLTAGE VOLTS cess Fig. 1. 1-V Curve of Phototransistor our Ba mm YU M2 wD GD 5 10 60 lz FORWARD CURRENT -mA = C859 Fig. 2. 1-V Curve in Saturation Icfigp CURRENT TRANSFER RATIO % 140 120 100 80 60 40 20 0 OW 2.3.46 1.0 2 345 10 20 40 100 ip FORWARD CURRENT - mA C860 Fig. 3. CTR vs. Forward Currenthate mecca (elt a GENL INSTR. OP TOELEK 3890128 GENL. INSTR, OPTOELEK~ ~~ Boe ete om toe MCT6 TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (conta (25 C Free Air Temperature Unless Otherwise Specified) 8 CURRENT THO = =) 8 st a g lc 6&4 DE 3890128 0003021 [ MCT6 McT6t MCT62 MCT66 D 03021 DT- 4(-83, 3 on 3 a 107 3 Cy = 6 oO 8 a Ve FORWARD VOLTAGE ~ V 'r CcTR= | Icgg LEAKAGE CURRENT AMPS 10 60 40 20 0 20 40 60 80 100 AMBIENT TEMPERATURE (C) C861 . NORMALIZED CURRENT TRANSFER RATIO % Fig. 4. Current Transfer Ratio 12 #6 1 2 #& 10 20 50 100 tp - FORWARD CURRENT mA C&62A - Q 0 20 3% 40 50 60 70 86 90 100 AMBIENT TEMPERATURE C Ce6a Fig. 6. Leakage Current vs. Temperature us. Temperature 20 TTT N =10V | 4 oe Ss RL =1Ka Md SWITCHING TIME (us) vos R, = 1002 HHT 0.1 020304060810 2 3 4567810 COLLECTOR CURRENT Ic (mA) 864 Fig. 7, Switching Time vs. Collector Current Fig. 5. 1-V Curve of LED vs. Temperature OUTPUT DEGRADATION % Ta = 25C 100 1000 10,000 100,000 TIME-HOURS ce65 vs. Coflector Voltage Fig. 8. Lifetime vs. Forward Current (Note 1} MCT66 TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25C Free Air Temperature Unless Otherwise Specified) ~ 10.0 < Z |. & 9 1, 250 2 75 5 | sows 1 a AQ Te LE Me ny z 5.0 wa 4 5 & 1p =20.MA o 25 T Tt 8 ip =10mA 4 | | 8 0 a 0 5 10 15 20 2 30 Veg COLLECTOR VOLTAGE DETECTOR (VOLTS) ca30 Fig. 1, Detector Output Characteristics 10.0 Veg = 10VOLTS 75 5.0 25 Qo Ig OUTPUT CURRENT DETECTOR (mA) 0 10 20 D 40 $0 60 lp (INPUT CURRENT LED (mal, Fig, 2. Input Current vs. Output Current 3 3 3S 3 > YD & B Ign ~ LEAKAGE CURRENT AMPS S oO S 2, 0 20 3 40 50 60 76 80 80 100 Ta - AMBIENT TEMPERATURE C Fig. 3. Leakage Current vs. Temperatura vs. Collector Voltage 189GENL INSTR1 OPTOELEK a8 Def saso128 ooogo22 2 B 7-41-83 -mIGT6 MCT61 MCT62 MCT66 MCT66 TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (Cont'd) (25C Free Air Temperature Unless Otherwise Specified) 5 - < 2 i 5 S14 3 LEO . 5 = 5 Vce-10 VOLTS wie2 3 # g | 2 z1 2 z 2 & 8 3 9 08 g 2 o x - w 0.6 wo < 4 e 4 a = z Soa z # 02 60 40 -20 20. 40 60 80 100 IK t0K 100K 1M 6.) 0.20304 060810 2 3 4 567810 AMBIENT TEMPERATURE('C) C833 FREQUENCY (Hz) c834 COLLECTOR CURRENT Ic (mA) C835 Fig. 4. Current Output Fig. 5. Output vs. Frequency Fig. 6. Switching Time vs. vs. Temperature Collector Current MODULATION WHF atsr coneraNT 'o Voc = 10 VOLTS INPUT INPUT a 4 : | DETECTOR 4 ouTeuT AL = 1000 Modulation Circuit Used + to Obtain Figure 5 C837 PULSE 47a = , Voco= 10 VOLTS NORMALIZED CTR DEGRADATION - % wT Leo | | peTector _ i PULSE 100 1000 10.000 _00,000 ; OUTPUT TIME-HOURS 1081 a A= 1008 Fig. 7. Lifetime vs. Forward Current Circuit Used to Obtain = Figure 6 . C838 NOTES 1. Normalized CTR degradation = CTRo~ CTR CTRo 2. The current transfer ratio (Ic/l) is the ratio of the detector collector current to the LED input current with Veg at 10 volts. . The frequency at which ic is 3 dB down from the 1 kHz value. . Rise time (t,) is the time required for the collector current to increase from 10% of its final value to 90%. Fall time (t,) is the time required for the collector current to decrease from 90% of its initial value to 10%. RSH