BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD240 Series TO-220 PACKAGE (TOP VIEW) 30 W at 25C Case Temperature 2 A Continuous Collector Current 4 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available E 3 This series is OBSOLETE AND NOT recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL BD239 Collector-emitter voltage (RBE = 100 ) BD239A VCER BD239C BD239 Collector-emitter voltage (IC = 30 mA) Emitter-base voltage Continuous collector current BD239A BD239B BD239C V CEO VEBO IC Peak collector current (see Note 1) ICM Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot Continuous base current Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. UNIT 55 E T E L O S B O BD239B VALUE 70 90 115 45 60 80 100 5 2 4 IB 0.6 Ptot 2 1/2LIC2 V V A A A 30 W 32 mJ Tj -65 to +150 TL 250 Tstg V -65 to +150 W C C C This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.24 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , V BE(off) = 0, RS = 0.1 , VCC = 20 V. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) BD239 45 BD239A 60 BD239B 80 BD239C 100 TYP MAX V VCE = 55 V VBE = 0 BD239 0.2 Collector-emitter VCE = 70 V VBE = 0 BD239A 0.2 cut-off current VCE = 90 V VBE = 0 BD239B 0.2 VCE = 115 V VBE = 0 BD239C 0.2 Collector cut-off VCE = 30 V IB = 0 BD239/239A 0.3 current VCE = 60 V IB = 0 BD239B/239C 0.3 VEB = 5V IC = 0 Forward current VCE = 4V IC = 0.2 A transfer ratio VCE = 4V IC = 1A 0.2 A IC = 1A 4V IC = 1A Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio IB = VCE = UNIT mA mA 1 A (see Notes 5 and 6) 0.7 V (see Notes 5 and 6) 1.3 V 40 (see Notes 5 and 6) 15 E T E L O S B O VCE = 10 V IC = 0.2 A f = 1 kHz 20 VCE = 10 V IC = 0.2 A f = 1 MHz 3 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN TYP 4.17 C/W RJA Junction to free air thermal resistance 62.5 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN ton Turn-on time IC = 200 mA IB(on) = 20 mA IB(off) = -20 mA 0.3 s toff Turn-off time VBE(off) = -3.4 V RL = 150 tp = 20 s, dc 2% 0.8 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 4 V tp = 300 s, duty cycle < 2% TC = 25C TC = 80C 100 TCS631AE 10 VCE(sat) - Collector-Emitter Saturation Voltage - V TCS631AG 1000 hFE - DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC = 100 mA IC = 300 mA IC = 1 A 1*0 0*1 E T E L O S B O 10 0*01 0*1 0*01 0*1 1*0 IC - Collector Current - A 1*0 10 100 1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1*0 TCS631AF VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25C 0*9 0*8 0*7 0*6 0*5 0*01 0*1 1*0 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS631AE tp = 300 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1*0 0*1 BD239 BD239A BD239B BD239C E T E L O S B O 0*01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AB Ptot - Maximum Power Dissipation - W 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.