○Product structure：Silicon monolithic integrated circuit ○This product is not designed to have protection against radioactive rays.
1/20 TSZ02201-0R6R0A600180-1-2
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TSZ22111･14･001 17.May.2013 Rev.004
Datashee
t
300mA Variable / Fixed Output
LDO Regulators
BDxxGA3WEFJ / BDxxGA3WNUX
●General Description
BDxxGA3WEFJ / BDxxGA3WNUX series devices are LDO regulators with an output current of 300mA. The output
accuracy is ±1% of the output voltage. Both fixed and variable output voltage devices are available. The output voltage of
the variable output voltage device can be varied from 1.5V to 13V using external resistors. Various fixed output voltage
devices that do not use external resistors are also available. It can be used for a wide range of digital appliance applications.
It has small package types : HTSOP-J8 (4.90mm x 6.00mm x 1.00mm) / VSON008 X2030 (2.00mm x 3.00mm x 0.60mm).
These devices have built-in over current prot ection to protect the device when output is shorted, 0μA shutdown mode, and
thermal shutdown circuit to protect the device during thermal over-load conditions. These LDO regulators are usable with
ceramic capacitors that enable a smaller layout and longer life.
●Package (Typ.) (Typ.) (Max.)
●Features
+/-1% output voltage accuracy
Built-in Over Current Protection (OCP)
Built-in Thermal Shut Down circuit (TSD)
Zero µA shutdown mode
●Key Specifications
Input power supply voltage range: 4.5V to 14.0V
Output voltage range(Variabl e type): 1.5V to 13.0V
Output voltage(Fixed type): 1.5V/1.8V/2.5V/3.0V/3.3V
5.0V/6.0V/7.0V/8.0V/9.0V/10V/12V
Output current: 0.3A (Max.)
Shutdown current: 0μA(Typ.)
Operating temperature range: -25℃ to +85℃
●Typical Application Circuit
HTSOP-J8 (EFJ) 4.90mm x 6.00mm x 1.00mm
VSON008X2030 (NUX) 2.00mm x 3.00mm x 0.60mm
HTSOP-J8
(
EFJ
)
V
SON008X2030
(NUX)
VCC
EN
GND FIN
VO
VO VCC
EN
GND FIN
R1
R2
VO_S COUT
CIN
CIN, COUT : Ceramic Capacitor
FB
COUT
CIN
CIN, COUT : Ceramic Capacitor
Output voltage variable type Output voltage fixed type
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
●Ordering Information
B D x x G A 3 W y y y - z z
Part
Number
Output
voltage
00:Variable
15:1.5V
18:1.8V
25:2.5V
30:3.0V
33:3.3V
50:5.0V
60:6.0V
70:7.0V
80:8.0V
90:9.0V
J0:10.0V
J2:12.0V
Input
voltage
range
G:15V
Output
current
A3:0.3A
Shutdown
mode
“W”:Included
Package
EFJ :HTSOP-J8
NUX:VSON008X2030
Packaging and forming specific ation
E2:Emboss tape reel
(HTSOP-J8)
TR:Emboss tape reel
(VSON008X2030)
●Line up
xx Output
Voltage(V) Product Name
00 variable BD00GA3WEFJ-E2 BD00GA3WNUX-TR
15 1.5 BD15GA3WEFJ-E2 BD15GA3WNUX-TR
18 1.8 BD18GA3WEFJ-E2 BD18GA3WNUX-TR
25 2.5 BD25GA3WEFJ-E2 BD25GA3WNUX-TR
30 3.0 BD30GA3WEFJ-E2 BD30GA3WNUX-TR
33 3.3 BD33GA3WEFJ-E2 BD33GA3WNUX-TR
50 5.0 BD50GA3WEFJ-E2 BD50GA3WNUX-TR
60 6.0 BD60GA3WEFJ-E2 BD60GA3WNUX-TR
70 7.0 BD70GA3WEFJ-E2 BD70GA3WNUX-TR
80 8.0 BD80GA3WEFJ-E2 BD80GA3WNUX-TR
90 9.0 BD90GA3WEFJ-E2 BD90GA3WNUX-TR
J0 10.0 BDJ0GA3WEFJ-E2 BDJ0GA3WNUX-TR
J2 12.0 BDJ2GA3WEFJ-E2 BDJ2GA3WNUX-TR
2/20 TSZ02201-0R6R0A600180-1-2
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TSZ22111･15･001 17.May.2013.Rev.004
3/20 TSZ02201-0R6R0A600180-1-2
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TSZ22111･15･001 17.May.2013.Rev.004
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
●Block Diagram
BD00GA3WEFJ / BD00GA3WNUX (Variable output voltage type)
●Pin Configuration (TOP VIEW)
●Pin Description
Pin No. Pin name Pin Function
1 VO Output pin
2 FB Feedback pin
3 GND GND pin
4 N.C. No Connect (Connect to GND or leave OPEN)
5 EN Enable pin
6 N.C. No Connect (Connect to GND or leave OPEN)
7 N.C. No Connect (Connect to GND or leave OPEN)
8 VCC Input pin
Reverse FIN Substrate(Connect to GND)
Figure 1. Block Diagram
VO
VCC
SOFT
START
2
(
VSON008X2030
)
FB
N.C.
8
7
6
5
3
4
VO
GND
EN
N.C.
N.C.
VCC
1
(
HTSOP-J8
)
8
7
6
5
1
2
3
4
VO
FB
GND
N.C. EN
N.C.
N.C.
VCC
4/20 TSZ02201-0R6R0A600180-1-2
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TSZ22111･15･001 17.May.2013.Rev.004
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
●Block Diagram
BDxxGA3WEFJ / BDxxGA3WNU X (Fixed ou tput voltage type)
●Pin Configuratio n (TOP VIEW)
●Pin Description
Pin No. Pin name Pin Function
1 VO Output pin
2 VO_S Output voltage monitor pin
3 GND GND pin
4 N.C. No Connect (Connect to GND or leave OPE N)
5 EN Enable pin
6 N.C. No Connect (Connect to GND or leave OPE N)
7 N.C. No Connect (Connect to GND or leave OPE N)
8 VCC Input pin
Reverse FIN Substrate(Connect to GND)
GND
EN
TSD
OCP
SOFT
START VO
VCC
VO_S
Figure 2. Block Diagram
8
7
6
5
1
2
3
4
(
VSON008X2030
)
VO_S
N.C.
VO
GND
EN
N.C.
N.C.
VCC
(
HTSOP-J8
)
8
7
6
5
1
2
3
4
VO
VO_S
GND
N.C. EN
N.C.
N.C.
VCC
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
●Absolute Maximum Ratings (Ta=25℃)
Parameter Symbol Ratings Unit
Power supply voltage VCC 15.0 *1 V
EN voltage VEN 15.0 V
HTSOP-J8 Pd*2 2110
*2
Power dissipation VSON008X2030 Pd*3 1700*3 mW
Operating Temperature Range Topr -25 to +85 ℃
Storage Temperature Range Tstg -55 to +150 ℃
Junction Temperature Tjmax +150 ℃
*1 Not to exceed Pd
*2 Reduced by 16.9mW/℃ for temperature above 25℃. (When mounted on a two-layer glass epoxy board with 70mm×70mm×1.6mm dimension)
*3 Reduced by 13.6mW/℃ for temperature above 25℃. (When mounted on a four-layer glass epoxy board with 114.3mm×76.2mm×1.6mm dimension)
●Recommended Operating Range (Ta=25℃) Ratings
Parameter Symbol
Min. Max.
Unit
Input power supply voltage VCC 4.5 14.0 V
EN voltage VEN 0.0 14.0 V
Output voltage setting range VO 1.5 13.0 V
Output current IO 0.0 0.3 A
●Electrical Characteristics (Unl ess otherwise specified, Ta=25℃, EN=3V, VCC=6V, R1=43kΩ, R2=8.2kΩ)
Limits
Parameter Symbol
Min. Typ. Max.
Unit Conditions
Circuit current at shutdown mode ISD - 0 5 μA VEN=0V, OFF mode
Bias current ICC - 600 900 μA
Line regulation Reg.I -1 - 1 % VCC=( VO+0.9V )→14.0V
Load regulation Reg IO -1.5 - 1.5 % IO=0→0.3A
Minimum dropout voltage1 VCO1 - 0.15 0.30 V VCC=5V, IO=100mA
Minimum dropout voltage2 VCO2 - 0.30 0.60 V VCC=5V, IO=200mA
Minimum dropout voltage3 VCO3 - 0.45 0.90 V VCC=5V, IO=300mA
Output reference voltage(Variable type) VFB 0.792 0.800 0.808 V IO=0A
Output voltage(Fixed type) VO V
O×0.99 VO V
O×1.01 V IO=0A
EN Low voltage VEN (Low) 0 - 0.8 V
EN High voltage VEN (High) 2.4 - 14.0 V
EN bias current IEN 1 3 9 µA
5/20 TSZ02201-0R6R0A600180-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･15･001 17.May.2013.Rev.004
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
●Typical Performance Curves
(Unless otherwise specified, Ta=25℃, EN=3V, VCC=6V, R1=43kΩ, R2=8.2kΩ)
IO
VO
VO
IO
Figure 4.
Transient Response
(0.3→0A)
Co=1µF
Figure 3.
Transient Response
(0→0.3A)
Co=1µF
VEN
VCC
VO
VEN
VCC
VO
Figure 5.
Input sequence 1
Co=1µF
Figure 6.
OFF sequence 1
Co=1µF
6/20 TSZ02201-0R6R0A600180-1-2
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TSZ22111･15･001 17.May.2013.Rev.004
7/20
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
TSZ02201-0R6R0A600180-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･15･001 17.May.2013.Rev.004
Figure 10.
Ta-ICC
Figure 7.
Input sequence 2
Co=1µF
Figure 8.
OFF sequence 2
Co=1µF
Figure 9.
Ta-VO (IO=0mA)
VO[V]
ICC[µA]
VEN VEN
VCC VCC
VO
VO
Ta[℃] Ta[℃]
8/20
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
TSZ02201-0R6R0A600180-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･15･001 17.May.2013.Rev.004
Figure 14.
VCC-ISD
(VEN=0V)
Figure 11.
Ta-ISD
(VEN=0V) Figure 12.
Ta-IEN
Figure 13.
IO-VO
IEN[µA]
ISD[µA]
ISD [µA]
VO[V]
IO[A] VCC [V]
Ta[℃] Ta[℃]
9/20
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
TSZ02201-0R6R0A600180-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･15･001 17.May.2013.Rev.004
Figure 18.
Minimum dropout Voltage1
（VCC=5V、IO=0.3A）
Figure 15.
VCC-VO (IO=0mA) Figure 16.
TSD (IO=0mA)
Figure 17.
OCP
Vo[V]
IO [A]
VO[V]
VO[V]
VCC [V]
VO[V]
Ta[℃]
Ta[℃]
10/20
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
TSZ02201-0R6R0A600180-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･15･001 17.May.2013.Rev.004
Figure 19.
ESR-Io characteristics Figure 20.
IO-ICC
Figure 21.
PSRR (IO=0mA)
IO [A]
ICC [µA]
IO [A]
P
S
RR
[d
B
]
Vdrop[V]
Figure 22.
Minimum dropout Voltage 2
（VCC=4.5V、Ta=25℃）
IO [A]
11/20
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
TSZ02201-0R6R0A600180-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･15･001 17.May.2013.Rev.004
Figure 25.
Minimum dropout Voltage 5
（VCC=10V、Ta=25℃）
Figure 26.
Minimum dropout Voltage 6
（VCC=12V、Ta=25℃）
Figure 23.
Minimum dropout Voltage 3
（VCC=6V、Ta=25℃）
Figure 24.
Minimum dropout Voltage 4
（VCC=8V、Ta=25℃）
Vdrop[V]
Vdrop[V]
Vdrop[V]
Vdrop[V]
IO [A]
IO [A]
IO [A]
IO [A]
12/20 TSZ02201-0R6R0A600180-1-2
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TSZ22111･15･001 17.May.2013.Rev.004
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
●Power Dissipation
◎HTSOP-J8
◎VSON008X2030
周囲温度:Ta [℃]
Measurement condition: mounted on a ROHM board,
Substrate size: 70mm × 70mm × 1.6mm
(Substrate with thermal via)
・Solder the thermal pad to Ground
① IC only
θj-a=249.5℃/W
② 1-layer（copper foil are : 0mm×0mm）
θj-a=153.2℃/W
③ 2-layer（copper foil are : 15mm×15mm）
θj-a=113.6℃/W
④ 2-layer（copper foil are : 70mm×70mm）
θj-a=59.2℃/W
⑤ 4-layer（copper foil are : 70mm×70mm）
θj-a=33.3℃/W
Power Dissipation :Pd [W]
0 25 50 75 100 125 150
0
2.0
3.0
4.0
1.0
①0.50W
②0.82W
③1.10W
④2.11W
⑤3.76W
Ambient Temperature : Ta [℃]
Power Dissipation :Pd [W]
0 25 50 75 100 125 150
0
2.0
3.0
4.0
周囲温度:Ta [℃]
1.0
①0.26W
②0.56W
③1.70W
④1.80W
Ambient Temperature : Ta [℃]
Measurement condition: mounted on a ROHM board,
Substrate size: 114.3mm × 76.2mm × 1.6 mm
・Solder the thermal pad to Ground
① IC only
θj-a=480.8℃/W
② 1-layer（copper foil are : 0mm2）
θj-a=223.2℃/W
③ 4-layer（2nd, 3rd layer copper foil are : 5655mm2,
4th layer copper foil are : thermal land）
θj-a=73.5℃/W
④ 4-layer（2nd, 3rd, 4th layer copper foil are : 5655mm2）
θj-a=69.4℃/W
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
Thermal design should ensure operation within the following conditions. Note that the temperatures listed are the allowed
temperature limits and thermal design should allow sufficient margin beyond these limits.
1. Ambient temperature Ta can be not higher than 85℃.
2. Chip junction temperature (Tj) can be not higher than 150℃.
Chip junction temperature can be determined as follows:
Calculation based on ambie nt temperature (Ta)
Tj=Ta+θj-a×W
＜Reference values＞
θj-a: HTSOP-J8
153.2℃/W 1-layer substrate (copper foil density 0mm×0mm)
113.6℃/W 2-layer substrate (copper foil density 15mm×15mm)
59.2℃/W 2-layer substrate (copper foil density 70mm×70mm)
33.3℃/W 4-layer substrate (copper foil density 70mm×70mm)
Substrate size: 70mm×70mm×1.6mm (Substrate with thermal via)
θj-a: VSON008X2030
223.2℃/W 1-layer substrate (copper foil density 0mm2)
73.5℃/W 4-layer substrate (2nd, 3rd layer copper foil densit y 5655mm2, 4th layer copper foil : thermal land)
69.4℃/W 4-layer substrate (2nd, 3rd, 4th layer copper foil densit y 5655mm2)
Substrate size: 114.3mm×76.2mm×1.6mm
Most of the heat loss that occurs in the BDxxGA3WEFJ / BDxxGA3WNUX series is generated from the output Pch FET.
Power loss is determined by the voltage dr op across VCC-VO and the output current. Be sure to co nfirm the system’s input
and output voltages, as well as the output current conditions in relation to the power dissipation characteristics of the VCC
and VO in the design. Bearing in mind that the power dissipation may v ary substantially dependi ng on the PCB employed, it
is important to consider PCB size based on thermal design and power dissipation characteristics of the chip with the PCB.
Power consumption [W] = Input voltage (VCC) - Output voltage (VO) ×IO(Ave)
Example: Where VCC=5.0V, VO=3.3V, IO (Ave) = 0.1A,
Power consumption [W] = 5.0V - 3.3V ×0.1A
=0.17W
13/20 TSZ02201-0R6R0A600180-1-2
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TSZ22111･15･001 17.May.2013.Rev.004
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
●Input and Output Capacitor
It is recommended that a capacitor (over 1uF) is placed near pins bet ween the input pin and GND as well as the output pin
and GND. A capacitor, between input pin and GND, is valid when the power supply impe dance is high or trace is long. Also,
as for the capacitor between the output pin and GND, the greater the capacitance, the more sustainable the line regulation
will be and the capacitor will make improvements of characteristics depending on the load. However, please check the
actual functionality of this part by mounting it on a board for the actual application. Ceramic capacitors usually have different,
thermal and equivalent series resistance char acteristics, and moreover capacitance decreases gradua lly in use.
For additional details, please check with the manufacturer, and select the best ceramic c apacitor for your application.
DC Bias Voltage [V]
Ceramic capacitor capacity – DC bias characteristics
(Characteristics example)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
0 1 2 3 4
Rated Voltage：10V
B1 characteristics
Rated Voltage：4V
X6S characteristics
Capacitance Change [%]
Rated Voltage:10V
F characteristics
Rated Voltage：6.3V
B characteristics
B characteristics
Rated Voltage：10V
●Equivalent Series Resistance ESR (Output Capacitor)
To prevent oscillations, please attach a capacitor between
VO and GND. Capacitors usually have ESR (Equivalent
Series Resistance). Operation will be stable in the ESR-IO
range shown to the right. Ceramic, tantalum and
electrolytic Capacitors have different ESR values, so
please ensure that you are using a capacitor that operates
in the stable operating region shown on the right. Finally,
please evaluate in the actual application.
CO=1μF
ESR – IO characteristics
14/20 TSZ02201-0R6R0A600180-1-2
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TSZ22111･15･001 17.May.2013.Rev.004
15/20 TSZ02201-0R6R0A600180-1-2
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TSZ22111･15･001 17.May.2013.Rev.004
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
●Evaluation Boa r d Circuit
●Evaluation Board Parts List
●Board Layout
PCB layout considerations:
・Input capacitor CIN connected to VCC (VIN) should be placed as close to VCC(VIN) pin as possible.
Output capacitor COUT also should be placed as close to IC pin as possible. In case the part is connected to inner layer
GND plane, please use sever al throu gh holes.
・FB pin has comparatively high impedance and can be affected by noise, so stray capacitance should be as small as
possible. Please take care of this during layout.
・Please make GND pattern wide enough to handle thermal dissipation.
・For output voltage setting (BD00GA3WEFJ / BD00GA3WNUX)
Output voltage can be set by FB pin voltage（0.800V typ.）and external resistance R1, R2.
（The use of resistors with R1+R2=1k to 90kΩ is recommended）
Designation Value Part No. Company Designation Value Part No. Company
R1 43kΩ MCR01PZPZF4302 ROHM C4 ‐ ‐ ‐
R2 8.2kΩ MCR01PZPZF8201 ROHM C5 1µF CM105B105K16A KYOCERA
R3 ‐ ‐ ‐ C6 ‐ ‐ ‐
R4 ‐ ‐ ‐ C7 ‐ ‐ ‐
R5 ‐ ‐ ‐ C8 ‐ ‐ ‐
R6 ‐ ‐ ‐ C9 ‐ ‐ ‐
C1 1µF CM105B105K16A KYOCERA C10 ‐ ‐ ‐
C2 ‐ ‐ ‐ U1 ‐ BDxxGA3WEFJ /
BDxxGA3WNUX ROHM
C3 ‐ ‐ ‐ U2 ‐ ‐ ‐
VO = VFB× R1+R2
R2
N.C.
GND
FB N.C.
N.C.
VO
2
VO
C7
3
4
7
5
U1
8
C1
C2
C3
R1
R2
C6
C5
1 VCC
6
EN
GND
SW1
EN
FIN
VCC
VO
EN GND
(
VCC VIN ) CIN
R1 R2
COUT
16/20 TSZ02201-0R6R0A600180-1-2
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TSZ22111･15･001 17.May.2013.Rev.004
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
●I/O Equivalent Circuits (Variable type : BD00GA3WEFJ / BD00GA3WNUX)
●I/O Equivalent Circuits (Fixed type : BDxxGA3WEFJ /BDxxGA3WNUX)
8pin (VCC) / 1pin (VO) 2pin (FB) 5pin (EN)
2pin (FB)
8pin (VCC)
1pin (VO)
5pin (EN)
1MΩ
2MΩ
8pin (VCC) / 1pin (VO) 2pin (VO_S) 5pin (EN)
2pin (VO_S)
8pin (VCC)
1pin (VO)
5pin (EN)
1MΩ
2MΩ
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
●Operational Notes
(1) Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can
break down the device, thus making it impossible t o identify the damag e mode, such as a short circ uit or an open circ uit.
If there is any possibility of exposure over the rated values, please consider adding circuit protection devices such as
fuses.
(2) Connecting the power supply connector backward
Connecting of the power supply in reverse polarity can damage the IC. Take precautions when connecting the power
supply lines. An external direction diode can be added.
(3) Power supply lines
Design the PCB layout pattern to provi de low im pedance GND and s upp ly lines. To obtain a low noise ground a nd supply
line, separate the ground section and supply lines of the digital and analog blocks. Furthermore, for all power supply
terminals to ICs, connect a capacitor between the power supply and GND terminal. When using electr olytic capacitors in
a circuit, note that capacitance values are reduced at low temperatures and over time.
(4) GND voltage
The potential of the GND pin must be minim um potential under all operating conditions.
(5) Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
(6) Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted togeth er.
(7) Actions in strong el ectromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
(8) ASO
When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO.
(9) Thermal shutdown circuit
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is
designed only to shut the IC off to prevent thermal runaway. It is not designe d to protect the IC or guarantee its operation.
Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circu it
is assumed.
TSD ON Temperature[℃] (typ.) Hysteresis Temperature [℃] (typ.)
BDxxGA3WEFJ / BDxxGA3WNUX 175 15
(10) Testing on application boards
When testing the IC on an applicati on boar d, connecting a c apacitor to a pin with low impedance subjects the IC to stress.
Always discharge ca pacitors after each proc ess or step. Always turn the IC’s power supply off before connecting it to or
removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic
measure. Use similar precaution when transporting or storing the IC.
17/20 TSZ02201-0R6R0A600180-1-2
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TSZ22111･15･001 17.May.2013.Rev.004
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
(11) Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic
diode or transistor. For example, the relation bet ween eac h potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junctio n operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC.
The operation of parasitic diodes can result in mutual i nterference amon g circuits, operational faults, or physical damage.
Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND(P
substrate) voltage to an input pin, should not be used.
Resistor Transistor (NPN)
N N N P+ P
+
P
P substrate
GND
Parasitic element
Pin A
N
N P+ P+
P
P substrate
GND
Parasitic element
Pin B C B
E
N
GND
Pin A
Pin B
Other adjacent elements
E
B C
GND Parasitic
element
Parasitic
element
(12) Ground Wiring Pattern.
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on
the ground voltage. The power supply and ground lines must be as short and thick as pos sible to reduce line impedanc e.
18/20 TSZ02201-0R6R0A600180-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 17.May.2013.Rev.004
19/20 TSZ02201-0R6R0A600180-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 17.May.2013.Rev.004
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
●Physical Dimension Tape and Reel Information
●Marking Diagram
xx Product Name
00 BD00GA3WEFJ BD00GA3WNUX
15 BD15GA3WEFJ BD15GA3WNUX
18 BD18GA3WEFJ BD18GA3WNUX
25 BD25GA3WEFJ BD25GA3WNUX
30 BD30GA3WEFJ BD30GA3WNUX
33 BD33GA3WEFJ BD33GA3WNUX
50 BD50GA3WEFJ BD50GA3WNUX
60 BD60GA3WEFJ BD60GA3WNUX
70 BD70GA3WEFJ BD70GA3WNUX
80 BD80GA3WEFJ BD80GA3WNUX
90 BD90GA3WEFJ BD90GA3WNUX
J0 BDJ0GA3WEFJ BDJ0GA3WNUX
J2 BDJ2GA3WEFJ BDJ2GA3WNUX
(Unit : mm)
HTSOP-J8
0.08 S
0.08
M
S
1.0MAX
0.85±0.05
1.27
0.08±0.08
0.42 +0.05
-
0.04
1.05±0.2
0.65±0.15
4
°
+
6
°
−
4
°
0.17 +0.05
-
0.03
234
568
(MAX 5.25 include BURR)
7
1
0.545
(3.2)
4.9±0.1
6.0±0.2
(2.4)
3.9±0.1
1PIN MARK
∗
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
(
Direction of feed
Reel
)
1pin
HTSOP-J8 (TOP VIEW)
xxGA3W
Part Number Marking
LOT Number
1PIN MARK
VSON008X2030 (TOP VIEW)
GA3
x x
Part Number Marking
LOT Numbe
r
1PIN MARK
∗
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
4000pcs
TR
(
Direction of feed
Reel
)
1pin
(Unit : mm)
VSON008X2030
5
1
8
4
1.4±0.1
0.25
1.5±0.1
0.5
0.3±0.1
0.25 +0.05
−0.04
C0.25
0.6MAX
(0.12)
0.02+0.03
−0.02 3.0±0.1
2.0±0.1
1PIN MARK
0.08 S
S
BDxxGA3WEFJ / BDxxGA3WNUX Datasheet
●Revision History
Date Revision Changes
20.July.2012 001 New Release
03.Dec.2012 002 Improvement English translation an d added Package Lineup
17.Jan.2013 003 The description was modified.
17.May.2013 004 Added BDxxGA3WNUX series
20/20 TSZ02201-0R6R0A600180-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 17.May.2013.Rev.004
Datasheet
Notice - GE Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅢ CLASSⅡb CLASSⅢ
CLASSⅣ CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Datasheet
Notice - GE Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
DatasheetDatasheet
Notice – WE Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.