BC817 Semiconductor NPN Silicon Transistor Descriptions * High current application * Switching application Features * Suitable for AF-Driver stage and low power output stages * Complementary pair with BC807 Ordering Information Type NO. BC817 Marking Package Code NA SOT-23 : hFE rank Outline Dimensions unit : mm 2.40.1 1.300.1 2.90.1 1.90 Typ. 1 3 0.4 Typ. 2 0.45~0.60 -0.03 +0.05 0.124 0~0.1 0.38 1.12 Max. 0.2 Min. KST-2003-000 PIN Connections 1. Base 2. Emitter 3. Collector 1 BC817 (Ta=25C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 50 V Collector-Emitter voltage VCEO 35 V Emitter-Base voltage VEBO 5 V Collector current IC 800 mA Collector dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55~150 C (Ta=25C) Electrical Characteristics Characteristic Symbol Test Condition Collector-Emitter breakdown voltage BVCEO IC=1mA, IE=0 Base-Emitter turn on voltage VBE(ON) VCE=1V, Collector-Emitter saturation voltage VCE(sat) - - V - - 1.2 V IC=500mA, IB=50mA - - 700 mV - - 100 nA 100 - 630 - VCB=5V, IC=10mA - 100 - MHz VCB=10V, IE=0, f=1MHz - 16 - pF IC=300mA ICBO VCB=25V, IE=0 DC current gain hFE* VCE=1V, IC=100mA Collector output capacitance * : hFE rank / 16(A) : 100 ~ 250, fT Cob 25(B) : 160 ~ 400, Unit 35 Collector cut-off current Transition frequency Min. Typ. Max. 40(C) : 250 ~ 630 KST-2003-000 2 BC817 Electrical Characteristic Curves Fig. 2 IC - VBE Fig. 1 PC - Ta 2SC5344SF Fig. 3 IC - VCE Fig. 5 hFE - Fig. 4 VCE(sat) - IC IC KST-2003-000 3