SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE BVceEo hee Vce(saT) fr Ch @10V, Pr Device Type @10mA Typical 1 MHz @ 25C (Vv) Min.-Max. @ 1,Vc_(V) |(V) Max. @ Ic, Ig (MHz) Typical (Pf) (mW) 2N2711 2N2712 2N2713 2N2714 2N2923 soon 2N2924 2N2925 2N2926 2N3390 2N3391 DADAOG ~~ NS NS SI OS 2N3391A 2N3392 2N3393 2N3394 2N3395 DHHAOAD ~~ NSN 2N3396 2N3397 2N3398 2N3402 2N3403 aann ws 2N3404 2N3405 2N3414 2N3415 2N3416 oooag o 2N3417 2N3662 2N3663 2N3843 2N3843A NNwoOoM 2N3844 2N3844A 2N3845 2N3845A 2N3854 SNM NN = 2N3854A 2N3855 2N3855A 2N3856 2N3856A NANNN 2N3858 2N3858A 2N3859 2N3859A 2N3860 2N3877 2N3877A 2N3900 2N3900A 2N3901 www MN NNNNN 101The General Electric 2N3858, 2N3859 and 2N3860 are NPN silicon, planar, epitaxial, passivated transistors designed primarily for AM radio I.F. and con- verter applications. Silicon Transistors absolute maximum rati ngs: (25C) (unless otherwise specified) Voltages Collector to Emitter Vero 30 volts Emitter to Base / 2B 4 volts Collector to Base Vero 30 volts Current Collector (Steady State) * Ic 100 mA Dissipation Total Power (Free air at 25C)+ Pr 360 mW Temperature Storage T sta ~55 to 150C Operating J 125C Lead Soldering, ie + %2 from TL 260C case for 10 seconds max. *Determined from power limitations due to saturation voltage at this current. }Derate 3.6 mW/C increase in ambient temperature above 25C. 1 i! 2N3858,9,60 NOTE 1. The specified lead +.185 MAX t diameter applies to the zone between .050 and .250 from 075 | the base of the seat. Be- MAX 260 tween .250 and end of lead | Max a maximum of .021 diam- eter is held. Outside of these | | 500 MIN ALL DIMEN. IN noes A | | 3 LEADS .o17 *:002 a | eee zones the lead diameter is not controlled. 00 (NOTE !) oo! 100 +,005 .205 MAX 135 MAX _{ -+_- electrical characteristics: (25C) (untess otherwise specified) STATIC CHARACTERISTICS Collector Cutoff Current (Vcx = 40V) (Ta = 100C) Emitter Cutoff Current (Ven = 5V) Forward Current Transfer Ratio (Vce = 4.5V, Ip = 2mA) 2N3858 2N3859 2N3860 CollectorBase Breakdown Voltage (Ic = 0.1mA) EmitterBase Breakdown Voltage (Iz = 0.1mA) CollectorEmitter Breakdown Voltage (Ic = 1mA) Collector Saturation Voltage (Ic = 10mMA, Ins = 1mA) DYNAMIC CHARACTERISTICS Gain Bandwidth Product \ vcs = 10. Ic = 2mA) 2N3858 2N3859 2N3860 Collector-Base Time Constant (Voz = 10V, Ic = 2mA) Output Capacitance, Common Base (Vos = 10V, Ix = 0, f = 1Mc) Input Capacitance, Common Base (Vis = 0.5V, In = 0, f = 1Mc) Case Capacitance 382 Sym. Teno Toso Iso hrz hre hee BVcno BVexno BVcxro Vorwary Min. Typ. Max. Units 50 NA 10 yA 100 NA 60 120 100 200 150 300 40 volts 5 volts 40 volts 0.125 volts 90 125 250 Mc 90 140 250 Me 90 170 250 Me 65 150 psec. 2.0 2.7 4.0 pF 10 pF 0.66 pFTYPICAL COMMON EMITTER y" PARAMETERS vs. Ic {= 262.5 Ke Ta=28C 2N3868 2N3869 2N3860 2000 yi i i 3 1000 oe ' "S00 input Admittance : : - vs. a i i ~ bt 100 Collector Current i i i. {OUTPUT SHORT CIRCUIT) " : 20 1 2 5 i 2 5 0 20 19 I," COLLECTOR CURRENT - ma a 2 3 2 $s iy 20 J 2 3 1 2 5 io 20 1, > COLLECTOR CURRENT - ma i + COLLECTOR CURRENT - mA 60 20 2 Yoe iw . i Output Admittance y i 3 vs. i j j Collector Current 2, i : (INPUT SHORT CIRCUIT) 5 : 2 1 4 2 3 1 2 5 0 20 I, COLLECTOR CURRENT -mA . 1," COLLECTOR CURRENT - ma Eg ~ COLLECTOR CURRENT - ma i { Yte i 3 i Forward Transfer : i ; z a Admittance * : vs. i Z = r 2 Collector Current g : i 2 (OUTPUT SHORT CIRCUIT) 2 . . t 2 4 68) z 4 6810 20 60 WO 2 #el 2 ae 20 oo Ig - COLLECTOR CURRENT ~ ma Tg" COLLECTOR CURRENT - mA tg COLLECTOR CURRENT - mA i Yre Reverse Transter Admittance vs. Collector Current (INPUT SHORT CIRCUIT) nOpg GEES THAN 01 Sq LESS THAN 0.1 pmho re LESS THAN O.1 pms ~ REVERSE TRANSFER ADMITTANCE - ymho - REVERSE TRANSFER ADOITTANCE ~ pate Jey ~ REVERSE TRANSFER ADMITTANCE, Ye te 3 t 2 5 1 20 1 1, * COLLECTOR CURRENT - ma tg = COLLECTOR CURRENT - ma 1, 7 COLLECTOR CURRENT - mA 3832N3858, 9, 60 | TYPICAL COMMON EMITTER y PARAMETERS vs. f Vce=10V, Ic=2mA, Ta=28C Yie Input Admittance vs. Frequency (OUTPUT SHORT CIRCUIT) Yoe Output Admittance vs. Frequency (INPUT SHORT GIRCUIT) Yte Forward Transfer Admittance vs. Frequency (OUTPUT SHORT CIRCUIT) Yre Reverse Transfer Admittance vs. Frequency (INPUT SHORT CIRCUIT) - INPUT ADMITTANCE - mambo Ne Yee * OUTPUT ADMITTANCE - pane Yyy ~ FORWARD TRANSFER ADMITTANCE-aone Yye REVERSE TRANSFER ADMITTANCE - ymho 2N3858 > FREQUENCY - Me T= FREQUENCY ~ 0 3 t 2 = FREQUENCY - Mc 384 Yq ~ INPUT ADMITTANCE - eumho 4+ FREQUENCY ~ Me %yq ~ OUTPUT ADMITTANCE - pmo 1 = FREQUENCY ~ Me FORWARD TRANSFER ADMITTANCE -mmne e "te 1 ~ FREQUENCY - Me Yee REVERSE TRANSFER ADMITTANCE - ymbo * 8 1 2 $s 10 20 f' FREQUENCY ~ Me 2N3860 INPUT ADMITTANCE - mmho (+ FREQUENCY - Me > OUTPUT ADMITTANCE - pmbo Ye 1 - FREQUENCY * Mc + mumbo g 8 Joa FORWARD TRANSFER ADMITTANCE Yee REVERSE TRANSFER ADMITTANCE - ymho 4 > FREQUENCY ~ WeVee - COLLECTOR VOLTAGE - VOLTS Vog ~ COLLECTOR VOLTAGE - VOLTS Vee COLLECTOR VOLTAGE - VOLTS GAIN BAND-WIDTH PRODUCT vs. COLLECTOR CURRENT 2N3858 vy 2 o 5 oo0 fo} Qo fo & 2? 8ssus ee 8 a 2N3858 Ol 02 05 J! 2 & 1 2 5 lo 30 Ig - COLLECTOR CURRENT -mA 2N3859 2 - Q eo o to 8 $ 8S SsHEeBes g 2N3859 Ol 02 05 il 2 5 ( 2 5 lo x I, ~ COLLECTOR CURRENT - mA 2N3860 o = 2 2 ; 29 28 2 8 gs? Seg 8 gg 02 05 Al 2 } | 2 5 ie} 30 I, - COLLECTOR CURRENT - mA 385 FORWARD CURRENT TRANSFER RATIO vs. COLLECTOR CURRENT 2N3858 Veg * 4.8 2N3858 hee - FORWARD CURRENT TRANSFER RATIO 01 02 oO A 2 3 ' 2 8 lo 20 50 100 Ig COLLECTOR CURRENT ~ mA 2N3859 Ty = 100C Vee? 4.5 2N3859 hee - FORWARD CURRENT TRANSFER RATIO 01 02 08 A 2 5 ' 2 5 io 20 50 100 Ig = COLLECTOR CURRENT ~ mA 2N3860 Noe" 45 VOLTS 2N3860 Ny FORWARO CURRENT TRANSFER RATIO OO 02 OF J 2 i) I, - COLLECTOR CURRENT ~ mA2N3858, 9, 60 | - NORMALIZED TO 25C VALUE re TYPICAL ELECTRICAL CHARACTERISTICS hee Icso vs. INPUT AND OUTPUT vs. TEMPERATURE CAPACITANCE TEMPERATURE 2 4.5 1+ 10MA 2N3656, 2N3859, 23860 0 Gap" OUTPUT CAPACITANCE - pF Cip- INPUT CAPACITANCE - pF Tego - COLLECTOR CUTOFF CURRENT - nA Voy 7 VOLTAGE COLLECTOR TO BASE - VOLTS -25 os 2S Ta AMBIENT TEMPERATURE - C Ty* AMBIENT TEMPERATURE - C COLLECTOR CHARACTERISTICS 2N3868 2N3859 2N3860 i il 9 re) , iow < 9 9 Zoe ' 1 1 8 - 8 + 8 f a z a 7 a 7 & s = 6 26 26 os 5 5 a 3 eR 4 & 4 & 4 Oo WwW w we 3 43 3 3 _ oO o S 2 o2 Oe 2 ( - 2 | O 20 40 60 80 100 O 20 40 60 80 {00 O 20 40 60 80 100 Voge ~ VOLTS Voe ~VOLTS Voge -VOLTS TYPICAL SMALL SIGNAL. CHARACTERISTICS f=1 Ke, Vor=10V, le=2mA, Ta= 28C Symbol Characteristics 2N3858 2N3859 2N3860 Units Ihe Input Resistance 1680 2480 3660 ohms hoe Output Conductance 8.2 11 17 pumhos here Forward Current Transfer Ratio 110 175 275 h.. Voltage Feedback Ratio 8.2 10.5 14.6 x10% h PARAMETERS vs. Vor h PARAMETERS vs. TEMPERATURE h PARAMETERS vs. Io 2N35856 2N3859 2N3860 2N3e60 bh PARAMETERS NORMALIZED TO fmt VALUE hb PARAMETERS WORMALIZED TO 25C VALUE & hey 80 -2 9 +28 950 475 08 5 0 18 20 25 30 Tan AMBIENT TEMPERATURE C Vog - COLLECTOR VOLTAGE - VOLTS +400 386