Data Sheet No. 2N3700 Generic Part Number: 2N3700 Type 2N3700 Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: * General-purpose low power silicon transistor. * Housed in TO-46 case. * Also available in chip form using the 4500 chip geometry. * The Min and Max limits shown are per MIL-PRF-19500/391 which Semicoa meets in all cases. * Radiation graphs available. TO-46 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 80 V Collector-Base Voltage VCBO 140 V Emitter-Base Voltage VEBO 7.0 V Collector Current, Continuous IC 1.0 A Operating Junction Temperature TJ -55 to +200 TSTG -55 to +200 Storage Temperature o C o C Data Sheet No. 2N3700 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit V(BR)CBO 140 --- V V(BR)CEO 80 --- V V(BR)EBO 7.0 --- V ICES --- 10 nA IEBO --- 10 nA Symbol Min Max Unit hFE1 hFE2 hFE3 hFE4 hFE5 100 50 90 50 15 300 200 --200 --- ----------- VBE(sat) --- 1.1 V dc VCE(sat)1 VCE(sat)2 ----- 0.2 0.5 V dc V dc Symbol Min Max Unit AC hFE 80 400 --- |hFE| 5.0 20 --- COBO --- 12 pF CIBO --- 60 pF rb'CC --- 400 ps NF --- 4 dB Switching Characteristics Symbol Min Max Unit Pulse Response 15 ns, 50 ohm input pulse tON + tOFF --- 30 ns Collector-Base Breakdown Voltage IC = 100 A Collector-Emitter Breakdown Voltage IC = 30 mA Emitter-Base Breakdown Voltage IE = 100 A Collector-Emitter Cutoff Current VCE = 90 V Emitter-Base Cutoff Current VEB = 5 V ON Characteristics DC Current Gain IC = 150 mA, VCE = 10 V IC = 0.1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V (pulsed) IC = 500 mA, VCE = 10 V (pulsed) IC = 1 A, VCE = 10 V (pulsed) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA (pulsed) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA (pulsed) IC = 500 mA, IB = 50 mA (pulsed) Small Signal Characteristics Short Circuit Forward Current Transfer Ratio IC = 1 mA, VCE = 5 V, f = 1 kHz Magnitude of Common Emitter, Small Signal, Short Circuit Forward Current Transfer Ratio VCE = 10 V, IC = 50 mA, f = 200 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 2.0 V, IC = 0, 100 kHz < f < 1 MHz Collector-Base Time Constant VCB = 10 V, IC = 10 mA, f = 79.8 MHz Noise Figure VCE = 10 V, IC = 100 A, Rg = 1 kOhm