SEMICONDUCTOR
5-3
HGTG20N60C3R, HGTP20N60C3R,
HGT1S20N60C3R, HGT1S20N60C3RS
40A, 600V, Rugged UFS Series N-Channel IGBTs
Features
• 40A, 600V TJ = 25oC
• 600V Switching SOA Capability
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns
• Short Circuit Rating at TJ = 150oC. . . . . . . . . . . . . 10µs
• Low Conduction Loss
Description
This f amily of IGBTs w as designed for optimum performance
in the demanding world of motor control operation as well as
other high voltage switching applications. These devices
demonstrate RUGGED performance capability when
subjected to harsh SHORT CIRCUIT WITHSTAND TIME
(SCWT) conditions. The parts have ULTRAFAST (UFS)
switching speed while the on-state conduction losses have
been kept at a low level.
The electrical specifications include typical Turn-On and
Turn-Off dv/dt ratings. These ratings and the Turn-On ratings
include the effect of the diode in the test circuit (Figure 16).
The data was obtained with the diode at the same TJ as the
IGBT under test.
Formerly Developmental Type TA49047.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
Packaging
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP20N60C3R TO-220AB 20N60C3R
HGTG20N60C3R TO-247 20N60C3R
HGT1S20N60C3R TO-262AA 20N60C3R
HGT1S20N60C3RS TO-263AB 20N60C3R
NO TE: When ordering, use the entire part number . Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3RS9A.
C
E
G
JEDEC STYLE TO-247 JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB JEDEC TO-262AA
ECG
COLLECTOR
(FLANGE)
ECG
COLLECTOR
(FLANGE)
GE
COLLECTOR
(FLANGE)
A
A
MG
EC
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
January 1997
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997 File Number 4226.1
5-4
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 40 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 80 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC, Fig. 12 . . . . . . . . . . . . . . . . . . . . . .SSOA 80A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD164 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL260 oC
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . tSC 10 µs
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 440V, TJ = 150oC, RGE = 10Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector-Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Emitter-Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V
Collector-Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
VCE = BVCES TC = 150oC - - 3.0 mA
Collector-Emitter Saturation Voltage VCE(SAT) IC = IC110,
VGE = 15V TC = 25oC - 1.8 2.2 V
TC = 150oC - 2.1 2.5 V
Gate-Emitter Threshold Voltage VGE(TH) IC = 250µA,
VCE = VGE TC = 25oC 3.5 6.3 7.5 V
Gate-Emitter Leakage Current IGES VGE = ±20V - - ±100 nA
Switching SOA (See Figure 12) SSOA TJ = 150oC
RG = 10Ω
VGE = 15V
VCE(PK) = 600V
L = 1mH 80 - - A
Gate-Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 9.0 - V
On-State Gate Charge QG(ON) IC = IC110,
VCE = 0.5 BVES VGE = 15V - 87 110 nC
VGE = 20V - 116 150 nC
Current Turn-On Delay Time tD(ON)I TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG= 10Ω
L = 1mH
Diode used in test circuit
RURP1560 at 150oC
-34- ns
Current Rise Time tRI -40- ns
Current Turn-Off Delay Time tD(OFF)I - 390 500 ns
Current Fall Time tFI - 330 400 ns
Turn-Off Voltage dv/dt (Note 3) dVCE/dt - 1.3 - V/ns
Turn-On Voltage dv/dt (Note 3) dVCE/dt - 7.0 - V/ns
Turn-On Energy (Note 4) EON - 2.3 - mJ
Turn-Off Energy (Note 5) EOFF - 3.0 - mJ
Thermal Resistance RθJC - - 0.76 oC/W
NOTES:
3. dVCE/dt depends on the diode used and the temperature of the diode.
4. Turn-On Energy Loss (EON) includes diode losses and is defined as the integral of the instantaneous power loss starting at the leading
edge of the input pulse and ending at the point where the collector voltage equals VCE(ON). This value of EON was obtained with a
R URP1560 diode at TJ = 150oC . A diff erent diode or temperature will result in a diff erent EON. F or e xample with diode at T J = 25oCE
ON
is about one half the value at 150oC.
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous pow er loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I CE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
5-5
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR EMITTER ON STATE V OLTAGE FIGURE 4. DC COLLECT OR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
FIGURE 5. TURN ON DELAY TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT FIGURE 6. TURN OFF DELAY TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
910 13
20
50
60
70
15
30
80
ICE, COLLECTOR EMITTER CURRENT (A)
876111214
V
GE, GATE TO EMITTER VOLTAGE (V)
10
0
40 TC = 25oC
TC = -40oC
TC = 150oC
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
ICE, COLLECTOR EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
15
20
25
30
35
40
432105678910
10
5
0
VGE = 15.0V
12.0V
10.0V
9.0V
8.0V
8.5V
7.5V
DUTY CYCLE <0.5%, TC = 25oC
PULSE DURATION = 250µs
ICE, COLLECTOR EMITTER CURRENT (A)
40
26410
50
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
30
60
70
80
80
TC = 25oC
TC = 150oC
TC = -40oC
0
10
20
90
13579
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
VGE = 15V
ICE, DC COLLECTOR CURRENT (A)
TC, CASE TEMPERATURE (oC)
25 50 75 100 125 150
0
5
10
15
20
25
30
35
40 VGE = 15V
51015 25 3540
26
28
30
32
34
tD(ON)I, TURN ON DELAY TIME (ns)
ICE, COLLECTOR-EMITTER CURRENT (A)
36
38
20 30
TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 480V
VGE = 15V
tD(OFF)I, TURN OFF DELAY TIME (ns)
51015
I
CE, COLLECTOR EMITTER CURRENT (A)
25 3520
300
400
425
350
325
275 4030
TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 480V, VGE = 15V
375
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
5-6
FIGURE 7. TURN ON RISE TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT FIGURE 8. TURN OFF F ALL TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 9. TURN ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR EMITTER CURRENT FIGURE 10. TURN OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 11. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR EMITTER CURRENT FIGURE 12. SWITCHING SAFE OPERATING AREA
Typical Performance Curves
(Continued)
tRI, TURN ON RISE TIME (ns)
ICE, COLLECTOR-EMITTER CURRENT (A)
510 20 25 35
20
40
60
80
40
0
120
15 30
100
TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 480V,
VGE = 15V
ICE, COLLECTOR EMITTER CURRENT (A)
tFI, FALL TIME (ns)
250 15 20 25 30 35 40
275
300
325
350
375
400
425
450
510
T
J
= 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 480V, VGE = 15V
ICE, COLLECTOR EMITTER CURRENT (A)
EON, TURN ON ENERGY LOSS (mJ)
30 4020155
1.0
2.0
3.0
10 25 35
4.0
5.0
6.0
0
TJ = 150oC, RG = 10Ω, L = 1mH,
VCE(PK) = 480V, VGE = 15V
ICE, COLLECTOR EMITTER CURRENT (A)
EOFF, TURN OFF ENERGY LOSS (mJ)
5 10152025303540
1.5
2.5
3.5
4.5
5.5
6.5
0.5
TJ = 150oC, RG = 10Ω, L = 1mH,
VCE(PK) = 480V, VGE = 15V
ICE, COLLECTOR EMITTER CURRENT (A)
fMAX, OPERATING FREQUENCY (kHz)
30 4020105
1
10
30
20
100
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
(DUTY FACTOR = 50%)
RθJC = 0.76oC/W
TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 480V
TC = 75oC, VGE = 15V
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR EMITTER CURRENT (A)
TJ = 150oC, RG = 10Ω, VGE = 15V, L = 1mH
0
20
40
60
80
100
0 100 200 300 400 500 600 700
PARTS MAY CURRENT LIMIT IN THIS REGION.
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
5-7
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveform
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 17. SWITCHING TEST WAVEFORMS
Typical Performance Curves
(Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
500
1000
1500
2000
2500
C, CAPACITANCE (pF)
CIES
CRES
3000
3500
4000 FREQUENCY = 1MHz
COES
4500
VGE, GATE-EMITTER VOLTAGE (V)
VCE, COLLECTOR EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
240
600
12
6
0
20 80 90
360
15
3
9
00
120
480
7060503010 40
VCE = 400V
VCE = 200V
VCE = 600V
IG REF = 1.376mA, RL = 30Ω, TC = 25oC
t1, RECTANGULAR PULSE DURATION (s)
10-3
10-2
10-1
100
10-5 10-3 10-2 10-1 100101
10-4
0.1
0.2
0.05
0.02
SINGLE PULSE
t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PDX ZθJC X RθJC) + TC
ZθJC, NORMALIZED THERMAL
RESPONSE
0.5
0.01
RG = 10Ω
L = 1mH
VDD = 480V
+
-
RURP1560
tFI
tD(OFF)I tRI
tD(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF EON
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
5-8
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reser ves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which ma y result from its use . No license is g r anted b y implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
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SEMICONDUCTOR
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the de vice. With proper handling and application procedures ,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBT’s
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be k ept
shorted together either by the use of metal shorting
springs or by the inser tion into conductive material such
as “ECCOSORBD LD26” or equivalent.
2. When devices are remov ed b y hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should ne v er be inserted into or remov ed from
circuits with power on.
5. Gate Voltage Rating - Nev er e xceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide la yer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These de vices do not hav e an internal
monolithic zener diode from gate to emitter. If gate
protection is required an e xternal zener is recommended.
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 11) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 3, 5, 6, 9
and 10. The operating frequency plot (Figure 11) of a typical
device shows fMAX1 or fMAX2 whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I+ tD(ON)I). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on- state time for a 50% duty factor. Other definitions are
possible. tD(OFF)I and tD(ON)I are defined in Figure 17.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJMAX.
tD(OFF)I is important when controlling output ripple under a
lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJMAX -
T
C
)/RθJC. The sum of device switching and conduction
losses must not exceed PD. A 50% duty factor was used
(Figure 11) and the conduction losses (PC) are approxi-
mated by PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 17. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the inte-
gral of the instantaneous po wer loss (I CE x VCE) during turn-
off . All tail losses are included in the calculation f or E OFF; i.e .
the collector current equals zero (ICE = 0).
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
