A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V(BR)DSS VGS = 0 V IDS = 100 mA 65 --- --- V
IDSS VGS = 0 V VDS = 28 V --- --- 0.5 mA
IGSS VGS = 20 V VDS = 0 V --- --- 1.0 µµA
VGS VDS = 10 V ID = 100 mA 1.0 --- 5.0 V
VDS VGS = 10 V ID = 10 A --- --- 1.5 V
GFS VDS = 10 V ID = 5 A 3.5 --- --- mho
CISS
COSS
CRSS
VGS = 28 V VDS = 0 V F = 1.0 MHz --- 375
188
26 --- pF
PIN
GPS
ηη
V
DD
= 28 V I
DQ
= 250 mA P
OUT
= 150 W (PEP)
f = 175 MHz 50 10 15 W
dB
%
NPN SILICON RF POWER TRANSISTOR
HFT150-28
DESCRIPTION:
The ASI HFT150-28 is Designed for
FEATURES:
• PG = 16 dB min. at 150 W/30 MHz
• IMD3 = -28 dBc max. at 150 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
ID16 A
V(BR)DSS 65 V
VGS ± 40 V
PDISS 300 W @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +150 OC
θθJC 0.60 OC/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10616
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H.003 / 0.08 .007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
IK
J
.112x45°
FULL R
C
E
B
G
D F
AL
Ø.125 NOM.
.125 / 3.18
.495 / 12.57 .505 / 12.83
.280 / 7.11
