Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SC1627A TO-92MOD TRANSISTOR (NPN) 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.8 W (Tamb=25) 3. BASE Collector current ICM: 0.4 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100A , IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=5mA, IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A hFE(1) VCE=2 V, IC= 50mA 70 hFE(2) VCE=2 V, IC= 200mA 40 Collector-emitter saturation voltage VCE(sat) IC= 200m A, IB= 20mA Base-emitter voltage VBE(on) VCE= 2V, IC= 5mA 0.55 Transition frequency fT VCE= 10 V, IC= 10mA 80 240 DC current gain Range V 0.8 V MHz CLASSIFICATION OF hFE (1) Rank 0.4 O Y 70-140 120-240