SCHOTTKY RECTIFIER 1 Amp
10BQ100
Bulletin PD-2.437 rev. F 03/03
1
www.irf.com
Major Ratings and Characteristics
IF(AV) Rectangular waveform 1.0 A
VRRM 100 V
IFSM @ tp = 5 µs sine 780 A
VF@ 1.0 Apk, TJ=125°C 0.62 V
TJrange - 55 to 175 °C
Characteristics 10BQ100 Units The 10BQ100 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Description/ Features
SMB
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
3.80 (.150)
3.30 (.130)
4.70 (.185)
4.10 (.161)
2.15 (.085)
1.80 (.071)
2.40 ( . 094)
1.90 ( . 075)
1.30 (.051)
0.76 (.030)
0.30 (.012)
0.15 (.006)
5.60 (.220)
5.00 (.197) 4.0 (.157)
2.0 TYP.
(.079 TYP.)
2.5 TYP.
(.098 TYP.) SOLDERING PAD
CATHODE ANODE
1 2
12
POLARIT Y PART NUMBER
4.2 (.165)
Device Marking: IR1J
10BQ100
Bulletin PD-2.497 rev. F 03/03
2www.irf.com
Part number 10BQ100
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 100
Voltage Ratings
VFM Max. Forward Voltage Drop (1) 0.78 V @ 1A
* See Fig. 1 0.89 V @ 2A
0.62 V @ 1A
0.72 V @ 2A
IRM Max. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 1 mA TJ = 125 °C
CTTypical Junction Capacitance 42 pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 V/ µs
(Rated VR)
TJ = 25 °C
TJ = 125 °C
VR = rated VR
Electrical Specifications
Parameters 10BQ Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
IF(AV) Max. Average Forward Current 1.0 A 50% duty cycle @ TL = 152 °C, rectangular wave form
IFSM Max. Peak One Cycle Non-Repetitive 780 A 5µs Sine or 3µs Rect. pulse
Surge Current 38 10ms Sine or 6ms Rect. pulse
EAS Non- Repetitive Avalanche Energy 1.0 mJ TJ = 25 °C, IAS = 0.5A, L = 8mH
IAR Repetitive Avalanche Current 0.5 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Parameters 10BQ Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated VRRM applied
TJMax. Junction Temperature Range (*) - 55 to 175 °C
Tstg Max. Storage Temperature Range - 55 to 175 °C
RthJL Max. Thermal Resistance Junction 36 °C/W DC operation
to Lead (**)
RthJA Max. Thermal Resistance Junction 80 °C/W
to Ambient
wt Approximate Weight 0.10 (0.003) g (oz.)
Case Style SMB Similar DO-214AA
Device Marking IR1J
Thermal-Mechanical Specifications
Parameters 10BQ Units Conditions
< thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
(*) dPtot 1
dTj Rth( j-a)
10BQ100
Bulletin PD-2.497 rev. F 03/03
3www.irf.com
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Instantaneous Forward Current - I F (A)
Forward Voltage Drop - VFM (V)
Reverse Current - I R (mA)
Reverse Voltage - VR (V)
Reverse Voltage - VR (V)
Junction Capacitance - C T (p F)
0.1
1
10
0.2 0.4 0.6 0.8 1
Tj = 175˚C
Tj = 125˚C
Tj = 25˚C
.00001
0.0001
0.001
0.01
0.1
1
10
0 20406080100
75˚C
25˚C
Tj = 175˚C
150˚C
125˚C
100˚C
50˚C
10
100
0 20406080100
T = 25˚C
J
Thermal Impedance Z thJC (°C/W)
t1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Leg)
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single Pulse
(Thermal Resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2 .
2. Peak Tj = Pdm x ZthJC + Tc .
10BQ100
Bulletin PD-2.497 rev. F 03/03
4www.irf.com
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
Average Forward Current - I F(AV) (A)
Allowable Lead Temperature (°C)
Average Forward Current - I F(AV) (A)
Average Power Loss (Watts)
Square Wave Pulse Duration - Tp (Microsec)
Non-Repetitive Surge Current - I FSM
(A)
10
100
1000
10 100 1000 10000
At Any Rated Load Condition
And With rated Vrrm Applied
Following Surge
0
0.2
0.4
0.6
0.8
1
0 0.3 0.6 0.9 1.2 1.5
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
110
120
130
140
150
160
170
180
0 0.4 0.8 1.2 1.6
DC
Square wave (D = 0.50)
Rated Vr applied
see note (2)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10BQ100
Bulletin PD-2.497 rev. F 03/03
5www.irf.com
IR LOGO
YEAR
CURRENT
IR1J VOLTAGE
YYWWX
WEEK
SITE ID
Tape & Reel Information
Marking & Identification Ordering Information
10BQ SERIES - TAPE AND REEL
WHEN ORDERING, INDICATE THE PART NUMBER
AND THE QUANTITY ( IN MULTIPLES OF 3000
PIECES).
EXAMPLE: 10BQ100TR - 6000 PIECES
10BQ SERIES - BULK QUANTITIES
WHEN ORDERING, INDICATE THE PART NUMBER
AND THE QUANTITY ( IN MULTIPLES OF 1000
PIECES).
EXAMPLE: 10BQ100 - 2000 PIECES
Dimensions in millimetres and (inches)
16 (0.63)
FEED DIRECTION
8 (0.32)
16 (0.63)
330 (13)
Each device has 2 rows for identification. The first row
designates the device as manufactured by International
Rectifier as indicated by the letters "IR", and the Part
Number (indicates the current and the voltage rating).
The second row indicates the year, the week of
manufacturing and the Site ID.
10BQ100
Bulletin PD-2.497 rev. F 03/03
6www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
