CPH6442 Ordering number : ENA1242A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH6442 General-Purpose Switching Device Applications Features * * * Low ON-resistance 4V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW10s, duty cycle1% When mounted on ceramic substrate (900mm2x0.8mm) Unit --60 V 20 V --6 A --24 A 1.6 W 150 C --55 to +150 C Package Dimensions Product & Package Information unit : mm (typ) 7018A-003 * Package : CPH6 * JEITA, JEDEC : SC-74, SOT-26, SOT-457 * Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL 4 Marking 0.9 1 2 0.95 LOT No. ZU 0.05 1.6 0.2 0.6 2.8 0.2 0.6 5 CPH6442-TL-E 0.15 2.9 6 TL 3 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Electrical Connection 1, 2, 5, 6 SANYO : CPH6 3 4 http://semicon.sanyo.com/en/network 61312 TKIM/61808PE TIIM TC-00001429 No. A1242-1/7 CPH6442 Electrical Characteristics at Ta=25C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=-60V, VGS=0V Ratings min typ Unit max 60 V 1 A 10 A Gate-to-Source Leakage Current IGSS VGS=16V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=10V, ID=1mA VDS=10V, ID=3A RDS(on)1 ID=3A, VGS=10V 33 43 m RDS(on)2 ID=1.5A, VGS=4.5V 42 59 m RDS(on)3 ID=1.5A, VGS=4V 46 65 m Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time 1.2 2.6 2.6 4.4 V S 1040 pF 90 pF Crss 55 pF 12 ns Rise Time td(on) tr 18 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=30V, VGS=10V, ID=6A IS=6A, VGS=0V 80 ns 35 ns 20 nC 3.0 nC 4.2 nC 0.82 1.2 V Switching Time Test Circuit VDD=30V VIN 10V 0V ID=3A RL=10 VOUT VIN D PW=10s D.C.1% G CPH6442 P.G 50 S Ordering Information Device CPH6442-TL-E Package Shipping memo CPH6 3,000pcs./reel Pb Free No. A1242-2/7 CPH6442 ID -- VDS 3.5 V 3 .5 3.0V 3.0 2.5 2.0 0 --25 C 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- m 90 ID=1.5A 3.0A 70 60 50 40 30 20 10 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 7 7 Source Current, IS -- A 1.0 C 5 2 5 3 2 4.0 IT13779 A 1.5 I D= , V 0 =4. 5A =1. V GS , ID V 5 3.0A . =4 I D= , S V VG .0 =10 V GS 60 50 40 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT13781 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.1 7 0.01 3.5 70 10 7 5 VDS=10V C 5 --2 = Ta C 75 3.0 Ambient Temperature, Ta -- C 5 2 2.5 80 IT13780 3 2.0 90 0 --60 16 | yfs | -- ID 10 1.5 RDS(on) -- Ta 100 Ta=25C 80 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 100 0.5 IT13778 --25 C 0.2 25C 0.1 Ta=7 5C 0 Static Drain-to-Source On-State Resistance, RDS(on) -- m 2 1 VGS=2.5V 0.5 Forward Transfer Admittance, | yfs | -- S 3 Ta= 75 1.0 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 0.2 5 7 10 IT13782 Drain Current, ID -- A 0.6 VDD=30V VGS=10V Ciss, Coss, Crss -- pF 5 tf 3 2 td(on) 10 tr 7 1.0 1.2 IT13783 f=1MHz 2 Ciss 1000 7 0.8 Ciss, Coss, Crss -- VDS 3 td(off) 100 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 2 Switching Time, SW Time -- ns 4 C 1.5 5 25 C 4.0 Drain Current, ID -- A 4.5 VDS=10V 4.5V Drain Current, ID -- A 5.0 ID -- VGS 7 6 15.0V 10.0V 5.5 4.0V 7.0V 6.0 7 5 3 2 100 Coss 7 Crss 5 5 3 3 0.1 2 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT13784 0 10 20 30 40 50 Drain-to-Source Voltage, VDS -- V 60 IT13785 No. A1242-3/7 CPH6442 VGS -- Qg 10 3 2 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 1.0 7 5 3 2 1 3 2 2 4 6 8 10 12 14 16 Total Gate Charge, Qg -- nC 18 20 IT13786 PD -- Ta 1.8 IDP=24A PW10s 10 ID=6A 1m s 0 s 10 3 2 0.1 7 5 0 Allowable Power Dissipation, PD -- W 10 7 5 2 0 ASO 5 VDS=30V ID=6A DC ms 10 0m s op era tio Operation in this area is limited by RDS(on). n( Ta = 25 C ) Ta=25C Single pulse When mounted on ceramic substrate (900mm20.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT13787 When mounted on ceramic substrate (900mm20.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT13788 No. A1242-4/7 CPH6442 Embossed Taping Specification CPH6442-TL-E No. A1242-5/7 CPH6442 Outline Drawing CPH6442-TL-E Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1242-6/7 CPH6442 Note on usage : Since the CPH6442 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1242-7/7