THIS PAGE INTENTIONALLY LEFT BLANK
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
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LINEAR & POWER AMPLIFIERS - SMT
HMC413QS16G / 413QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
v04.0505
General Description
Features
Functional Diagram
The HMC413QS16G & HMC413QS16GE are high
efficiency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power ampli ers which operate
between 1.6 and 2.2 GHz. The ampli er is packaged
in a low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal perfor-
mance. With a minimum of external components, the
ampli er provides 23 dB of gain, +29.5 dBm of satu-
rated power at 42% PAE from a +5V supply voltage.
The ampli er can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
Gain: 23 dB
Saturated Power: +29.5 dBm
42% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
Included in the HMC-DK002 Designer’s Kit
Electrical Speci cations, TA = +25° C, As a Function of Vs, Vpd = 3.6V
Typical Applications
This ampli er is ideal for use as a power/driver
ampli er for 1.6 - 2.2 GHz applications:
• Cellular / PCS / 3G
• Portable & Infrastructure
• Wireless Local Loop
Parameter Frequency Vs= 3.6V Vs= 5V Units
Min. Typ. Max. Min. Typ. Max.
Gain
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.1 GHz
2.1 - 2.2 GHz
18
19
18
17
21
22
21
20
19
20
19
18
22
23
22
21
dB
dB
dB
dB
Gain Variation Over Temperature 1.6 - 2.2 GHz 0.025 0.035 0.025 0.035 dB/°C
Input Return Loss 1.6 - 2.2 GHz 10 10 dB
Output Return Loss 1.6 - 2.2 GHz 8 9 dB
Output Power for 1 dB Compression (P1dB) 1.6 - 1.7 GHz
1.7 - 2.2 GHz
20
21
23
24
23
24
26
27
dBm
dBm
Saturated Output Power (Psat) 1.6 - 1.7 GHz
1.7 - 2.2 GHz
25.5
26.5
28.5
29.5
dBm
dBm
Output Third Order Intercept (IP3)
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.2 GHz
32
33
32
35
36
35
36
37
36
39
40
39
dBm
dBm
dBm
Noise Figure 1.6 - 2.2 GHz 5.5 5.5 dB
Supply Current (Icq) Vpd= 0V/3.6V 0.002/220 0.002/270 mA
Control Current (Ipd) Vpd= 3.6V 7 7 mA
Switching Speed tON, tOFF 80 80 ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Return Loss, Vs= 3.6V Return Loss, Vs= 5V
Gain vs. Temperature, Vs= 3.6V Gain vs. Temperature, Vs= 5V
P1dB vs. Temperature, Vs= 3.6V P1dB vs. Temperature, Vs= 5V
0
5
10
15
20
25
30
1.3 1.5 1.7 1.9 2.1 2.3 2.5
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
1.3 1.5 1.7 1.9 2.1 2.3 2.5
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
1.3 1.5 1.7 1.9 2.1 2.3 2.5
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
1.3 1.5 1.7 1.9 2.1 2.3 2.5
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
1.3 1.5 1.7 1.9 2.1 2.3 2.5
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
30
1.3 1.5 1.7 1.9 2.1 2.3 2.5
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
HMC413QS16G / 413QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
v04.0505
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 52
LINEAR & POWER AMPLIFIERS - SMT
Power Compression@ 1.9 GHz, Vs= 3.6V Power Compression@ 1.9 GHz, Vs= 5V
Psat vs. Temperature, Vs= 3.6V Psat vs. Temperature, Vs= 5V
Output IP3 vs. Temperature, Vs= 3.6V Output IP3 vs. Temperature, Vs= 5V
2
6
10
14
18
22
26
30
34
38
42
46
-12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
2
6
10
14
18
22
26
30
34
38
42
46
-12-10-8-6-4-20246810
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
12
16
20
24
28
32
36
40
44
1.3 1.5 1.7 1.9 2.1 2.3 2.5
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
10
14
18
22
26
30
34
38
42
1.3 1.5 1.7 1.9 2.1 2.3 2.5
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
1.3 1.5 1.7 1.9 2.1 2.3 2.5
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
1.3 1.5 1.7 1.9 2.1 2.3 2.5
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
HMC413QS16G / 413QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
v04.0505
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 53
Noise Figure vs. Temperature, Vs= 3.6V Noise Figure vs. Temperature, Vs= 5V
Reverse Isolation
vs. Temperature, Vs= 3.6V
Gain & Power vs.
Supply Voltage @ 1.9 GHz
Power Down Isolation, Vs= 3.6V
Gain, Power & Quiescent Supply
Current vs. Vpd @ 1.9 GHz, Vcc = +3.6V
0
2
4
6
8
10
1.5 1.7 1.9 2.1 2.3 2.5
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
1.5 1.7 1.9 2.1 2.3 2.5
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
13
16
19
22
25
28
30
90
150
210
270
330
1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5
Gain
P1dB
Psat
Icq
GAIN (dB), P1dB (dBm), Psat (dBm)
Icq (mA)
Vpd (Vdc)
20
21
22
23
24
25
26
27
28
29
30
14
16
18
20
22
24
26
28
30
32
34
2.75 3.25 3.75 4.25 4.75 5.25
Gain
P1dB
Psat
GAIN (dB)
P1dB, Psat (dBm)
Vcc SUPPLY VOLTAGE (Vdc)
-60
-50
-40
-30
-20
-10
0
1.3 1.5 1.7 1.9 2.1 2.3 2.5
ISOLATION (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
1.3 1.5 1.7 1.9 2.1 2.3 2.5
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
HMC413QS16G / 413QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
v04.0505
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 54
LINEAR & POWER AMPLIFIERS - SMT
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +5.5 Vdc
Control Voltage (Vpd1, Vpd2) +4.0 Vdc
RF Input Power (RFIN)(Vs = +5Vdc,
Vpd = +3.6 Vdc) +15 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C) 1.56 W
Thermal Resistance
(junction to ground paddle) 42 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
HMC413QS16G / 413QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
v04.0505
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC413QS16G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC413
XXXX
HMC413QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] HMC413
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 55
Pin Number Function Description Interface Schematic
1, 2, 4, 5, 7, 8,
9, 10, 13, 15 GND
Ground: Backside of package has exposed metal ground slug that
must be connected to ground thru a short path. Vias under the device
are required.
3, 14 Vpd1, Vpd2
Power Control Pin. For maximum power, this pin should be connected
to 3.6V. For 5V operation, a dropping resistor is required. A higher
voltage is not recommended. For lower idle current, this voltage can
be reduced.
6 RFIN This pin is AC coupled and matched to 50 Ohms from 1.6 to 2.2 GHz.
11, 12 RFOUT RF output and bias for the output stage.
16 Vcc Power supply voltage for the rst ampli er stage. An external bypass
capacitor of 330 pF is required as shown in the application schematic.
Pin Descriptions
HMC413QS16G / 413QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
v04.0505
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 56
LINEAR & POWER AMPLIFIERS - SMT
Evaluation PCB
The circuit board used in the nal application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for Evaluation PCB 105000 [1]
* For 5V operation on Vctl line,
select R1, R2 such that 3.6V is
presented on Pins 3 and 14.
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3 2 mm DC Header
C1 2.2 pF Capacitor, 0603 Pkg.
C2 10 pF Capacitor, 0402 Pkg.
C3 - C4 330 pF Capacitor, 0603 Pkg.
C5 2.2 μF Capacitor, Tantalum
L1 16 nH Inductor 0603 Pkg.
U1 HMC413QS16G / HMC413QS16GE
Ampli er
PCB [2] 105018 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC413QS16G / 413QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
v04.0505
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 57
Application Circuit
* For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14.
TL1 TL2 TL3
Impedance 50 Ohm 50 Ohm 50 Ohm
Length 0.1” 0.15” 0.1”
HMC413QS16G / 413QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
v04.0505
