BLS3135-65 TRAY - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1999 May 01 1999 Aug 16

DISCRETE SEMICONDUCTORS

BLS3135-65

Microwave power transistor

ook, halfpage

M3D259

1999 Aug 16 2

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-65

FEATURES

•Suitable for short and medium pulse applications

•Internal input and output matching networks for an easy

circuit design

•Emitter ballasting resistors improve ruggedness

•Gold metallization ensures excellent reliability

•Interdigitated emitter-base structure provides high

emitter efficiency

•Multicellgeometryimprovespowersharingandreduces

thermal resistance.

APPLICATIONS

•Commonbaseclass-Cpulsedpoweramplifiersforradar

applications in the 3.1 to 3.5 GHz band.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a 2-lead rectangular flange package with a ceramic cap

(SOT422A) with the common base connected to the

flange.

PINNING - SOT422A

PIN DESCRIPTION

1 collector

2 emitter

3 base; connected to ﬂange

Fig.1 Simplified outline.

handbook, halfpage

MBK051

QUICK REFERENCE DATA

RF performance at Th=25°C in a common base class-C test circuit.

MODE OF OPERATION f

(GHz) VCB

(V) PL

(W) Gp

(dB) ηC

(%)

Pulsed, class-C 3.1 to 3.5 40 65 ≥7≥35

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1999 Aug 16 3

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-65

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

APPLICATION INFORMATION

RF performance at Th=25°C in a common-base test circuit.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −75 V

VCES collector-emitter voltage RBE =0 −75 V

VEBO emitter-base voltage open collector −2V

CM peak collector current tp≤100 µs; δ≤10% −8A

tot total power dissipation tp= 100 µs; δ= 10%; Tmb =25°C−200 W

Tstg storage temperature −65 +200 °C

Tjoperating junction temperature −200 °C

Tsld soldering temperature up to 0.2 mm from ceramic cap;

t≤10 s −235 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Zth j-h thermal impedance from junction to heatsink tp= 100 µs; δ= 10%; note 1 0.57 K/W

tp= 300 µs; δ= 10%; note 1 0.74 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V(BR)CBO collector-base breakdown voltage IC= 20 mA; open emitter 75 −V

V(BR)CES collector-emitter breakdown voltage IC= 20 mA; VBE =0 75 −V

CBO collector leakage current VCB =40V; I

E=0 −2mA

CES collector leakage current VCE =40V; V

BE =0 −4mA

EBO emitter leakage current VEB = 1.5 V; IC=0 −0.4 mA

hFE DC current gain VCB =5V; I

C=2A 40 −

MODE OF OPERATION f

(GHz) VCE

(V) PL

(W) Gp

(dB) ηC

(%)

Class-C; tp= 100 µs; δ= 10% 3.1 to 3.5 40 ≥65 ≥7≥35

1999 Aug 16 4

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-65

Fig.2 Loadpowerasafunctionofthedrivepower;

typical values.

VCB = 40 V; class-C; tp= 100 µs; δ= 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

(3) f = 3.5 GHz.

handbook, halfpage

(2)

(3)

(W)

6PD (W)

812

100

MCD750

(1)

Fig.3 Power gain as a function of load power;

typical values.

VCB = 40 V; class-C; tp= 100 µs; δ= 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

(3) f = 3.5 GHz.

handbook, halfpage

0 100

(dB)

PL (W)

40 60 80

MCD751

(2)

(3)

(1)

VCB = 40 V; class-C; tp= 100 µs; δ= 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

(3) f = 3.5 GHz.

Fig.4 Collector efficiency as a function of load

power; typical values.

handbook, halfpage

0 100

ηC

(%)

PL (W)

40 60 80

MCD752

(2) (1)

(3)

1999 Aug 16 5

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-65

VCB = 40 V; class-C; tp= 100 µs; δ= 10%.

Fig.5 Power gain as a function of frequency;

typical values.

handbook, halfpage

3.1

(dB)

3.2 f (GHz)

3.3 3.5

3.4

MCD753

VCB = 40 V; class-C; tp= 100 µs; δ= 10%.

Fig.6 Return losses input as a function of

frequency; typical values.

handbook, halfpage

3.1

Return

Losses

(dB)

3.2 3.3 3.5

3.4 f (GHz)

MCD754

Fig.7 Input impedance as a function of frequency

(series components); typical values.

VCB = 40 V; class-C; PL=65W.

handbook, halfpage

3.1

(Ω)

3.2 f (GHz)

3.3 3.5

3.4

MCD755

Fig.8 Load impedance as a function of frequency

(series components); typical values.

VCB = 40 V; class-C; PL=65W.

handbook, halfpage

3.1 3.2 3.3 3.5

−4

−8

3.4

MCD756

f (MHz)

(Ω)

1999 Aug 16 6

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-65

handbook, full pagewidth

MCD757

30 30

outputinput

Fig.9 Component layout for 3.1 to 3.5 GHz class-C test circuit.

Dimensions in mm.

The components are located on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

The striplines are on double-clad printed-circuit board with Duroid dielectric (εr= 2.2); thickness = 0.38 mm.

1999 Aug 16 7

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-65

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT422A 99-03-29

0 5 10 mm

scale

Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT422A

UNIT Q

cD E

EFH p q

mm 0.13

0.08

5.21

4.95 10.29

10.03

9.93

9.68 8.76

8.51

10.29

10.03 1.58

1.47 19.18

17.65

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

3.43

3.18 16.51 22.99

22.73

9.91

9.65 0.25

0.76

5.72

4.83 3.35

2.92

inches 0.005

0.003

0.205

0.195 0.405

0.395

0.391

0.381 0.345

0.335

0.405

0.395 0.062

0.058 0.755

0.695

4.52

3.74

0.178

0.147 0.135

0.125 0.65 0.905

0.895 0.390

0.380 0.01 0.03

0.225

0.190 0.132

0.115

U2E1E

M M

w1AB

M M M

1999 Aug 16 8

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-65

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 Aug 16 9

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-65

NOTES

1999 Aug 16 10

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-65

NOTES

1999 Aug 16 11

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-65

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

1999 67

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Printed in The Netherlands 125002/02/pp12 Date of release: 1999 Aug 16 Document order number: 9397 750 06029