CJD31C NPN CJD32C PNP COMPLEMENTARY SILICON POWER TRANSISTOR Central Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CUD31C, DPAKE! DPAK CASE CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for power amplifier and high speed switching applications. MAXIMUM RATINGS (Tc=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation (TG=25C) Power Dissipation (Ta=25C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL UNITS VcBo 100 V VCEO 100 V VEBO 5.0 Vv lo 3.0 A Icom 5.0 A IB 4.0 A Pp 15 Ww Pp 1.56 Ww TyTstg -65 to +150 C QJjc 8.33 SC/iW OJA 80.1 C/W ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IcEO VcE=60V 50 pA Ices Vop=100V 20 pA lEBO VeEB=9-0V 1.0 mA BVCcEO Ic=30mA 100 Vv VCE(SAT) I=3.0A, Ip=375mA 1.2 V VBE(ON) Voe=4.0V, Io=3.0A 1.8 Vv hee Voe=4.0V, Ic=1.0A 25 HEE Voe=4.0V, Ic=3.0A 10 50 fT Vope=10V, Io=500mA, f=1.0MHz 3.0 MHz Ne VOE=10V, Ico=500mA, f=1.0kKHz 20 110All dimensions in inches (mm). 086(2.19) -094(2.40) -018(0.45) .024(0.60) -020(0.51 MINIMUM -018(0.45) > .024(0.60) .035(0.89) | TOP VIEW .250(6.35) .235(5.97) -240(6.10) -265(6.73) .205(5.20 0280.70) -215(5.46) -050(1.27) oh .045(1.14) .040(1.02) | 423 .024(0.60) "181(4.60) LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR 111 DTA E Sila R2