CM150DX-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMODTM NX-Series Module 150 Amperes/1200 Volts A D E J F J G Y (4 PLACES) AD AE AF H 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Q ST 47 U 24 Z R S T Q 48 U AA B AB 23 DETAIL "B" 1 W V X M L 2 3 4 5 6 7 8 N K AG 9 10 11 12 13 14 15 16 17 18 19 20 21 22 K P L DETAIL "A" AL AM AK AT AU E1C2(24) E1C2(23) AV AW Tr2 Di1 Di2 Tr1 G2(38) E2(39) AX DETAIL "B" AJ AH AC (4 PLACES) C AR AS AP C1(22) E1(16) AN G1(15) AQ DETAIL "A" E2 (47) C1 (48) Th NTC TH1 (1) *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF 0.5 TH2 (2) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions A B C D E F G H J K L M N P Q R S T U V W X Y 5.98 2.44 0.67 5.39 4.79 4.330.02 3.89 3.72 0.53 0.15 0.28 0.30 1.95 0.9 0.55 0.87 0.67 0.48 0.24 0.16 0.37 0.83 M6 152.0 62.0 17.0 137.0 121.7 110.00.5 99.0 94.5 13.5 3.8 7.25 7.75 49.54 22.86 14.0 22.0 17.0 12.0 6.0 4.2 6.5 21.14 M6 Z AA AB AC AD AE AF AG AH AJ AK AL AM AN AP AQ AR AS AT AU AV AW AX Rev. 3/09 Inches Millimeters 1.53 39.0 1.970.02 50.00.5 2.26 57.5 0.22 Dia. 5.5 Dia. 0.67+0.04/-0.02 17.0+1.0/-0.5 0.51 13.0 0.27 7.0 0.03 0.8 0.81 20.5 0.12 3.0 0.14 3.5 0.21 5.4 0.49 12.5 0.15 3.81 0.05 1.15 0.025 0.65 0.29 7.4 0.24 6.2 0.17 Dia. 4.3 Dia. 0.10 Dia. 2.5 Dia. 0.08 Dia. 2.1 Dia. 0.06 1.5 0.49 12.5 Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM150DX-24A is a 1200V (VCES), 150 Ampere Dual IGBTMODTM Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 150 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150DX-24A Dual IGBTMODTM NX-Series Module 150 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Characteristics Symbol Power Device Junction Temperature CM150DX-24A Units Tj -40 to 150 C Tstg -40 to 125 C Mounting Torque, M5 Mounting Screws -- 31 in-lb Mounting Torque, M6 Main Terminal Screws -- 40 in-lb Module Weight (Typical) -- 330 Grams Baseplate Flatness, On Centerline X, Y (See Below) -- 0 ~ +100 m VISO 2500 Volts Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) Storage Temperature Isolation Voltage, AC 1 minute, 60Hz Sinusoidal Inverter Sector VGES 20 Volts Collector Current (TC = 91C)*1 IC 150 Amperes Peak Collector Current (Pulse)*3 ICM 300 Amperes Emitter Current (TC = 25C)*1*4 IE*2 150 Amperes Peak Emitter Current (Pulse)*3 IEM*2 300 Amperes PC 960 Watts Maximum Collector Dissipation (TC = 25C)*1*4 *1 *2 *3 *4 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip. IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Junction temperature (Tj) should not increase beyond Tj(max) rating. BASEPLATE FLATNESS MEASUREMENT POINT CHIP LOCATION (TOP VIEW) NTC Thermistor 0 Y 73.5 FWDi 42.5 IGBT 0 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 X 21.2 36.2 47 32.6 24 21.2 23 43.8 Th 48 + : CONVEX HEATSINK SIDE 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 34.2 0 1 31.3 - : CONCAVE 73.5 + : CONVEX HEATSINK SIDE - : CONCAVE Chip Location (Top View) Dimensions in mm (Tolerance: 1mm) 2 Rev. 3/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150DX-24A Dual IGBTMODTM NX-Series Module 150 Amperes/1200 Volts Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified Inverter Sector Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V -- -- 1.0 mA VGE(th) IC = 15mA, VCE = 10V 6 7 8 Volts IGES VGE = VGES, VCE = 0V -- -- 0.5 A VCE(sat) IC = 150A, VGE = 15V, Tj = 25C*5 -- 2.0 2.6 Volts IC = 150A, VGE = 15V, Tj = 125C*5 -- 2.2 -- Volts IC = 150A, VGE = 15V, Chip -- 1.9 -- Volts -- -- 23.0 nF -- -- 2.0 nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG VCE = 10V, VGE = 0V -- -- 0.45 nF VCC = 600V, IC = 150A, VGE = 15V -- 675 -- nC -- -- 130 ns VCC = 600V, IC = 150A, -- -- 100 ns Inductive Turn-on Delay Time td(on) Load Turn-on Rise Time tr Switch Turn-off Delay Time td(off) VGE = 15V, -- -- 450 ns Time Turn-off Fall Time tf RG = 2.2, IE = 150A, -- -- 600 ns Reverse Recovery Time trr*2 Inductive Load Switching Operation -- -- 150 ns Reverse Recovery Charge Qrr*2 -- 6 -- C Emitter-Collector Voltage VEC*2 IE = 150A, VGE = 0V, Tj = 25C*5 -- 2.6 3.4 Volts IE = 150A, VGE = 0V, Tj = 125C*5 -- 2.16 -- Volts IE = 150A, VGE = 0V, Chip -- 2.5 -- Volts Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Module Lead Resistance Symbol Test Conditions Rlead Main Termnals-Chip (Per Switch) -- 1.6 -- m Thermal Resistance, Junction to Case** Rth(j-c)Q Per IGBT*1 -- -- 0.13 C/W Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi*1 -- -- 0.23 C/W Rth(c-f) Case to Heatsink (Per 1 Module) -- 0.015 -- C/W -- 0 -- 2 -- 21 Contact Thermal Resistance** Thermal Grease Internal Gate Resistance RGint External Gate Resistance RG Applied*1*7 TC = 25C NTC Thermistor Sector, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance RTH TC = 25C*1 4.85 5.00 5.15 k Deviation of Resistance R/R -7.3 -- +7.8 % -- 3375 -- K -- -- 10 mW B Constant Power Dissipation B(25/50) P25 TC = 100C, R100 = 493*1 B = (InR1 - InR2) / (1/T1 - 1/T2)*6 TC = 25C*1 **Thermal resistance values are per 1 element. *1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip. *2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. *6 R1: Resistance at Absolute Temperature T1(K), R2: Resistance at Absolute Temperature T2(K), T(K) = T(C) + 273.15 *7 Typical value is measured by using thermally conductive grease of = 0.9 [W/(m * K)]. Rev. 3/09 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150DX-24A Dual IGBTMODTM NX-Series Module 150 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) 300 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 12 150 11 100 50 10 9 0 0 2 4 6 8 2 1 50 0 100 150 200 250 Tj = 25C 8 IC = 300A 6 IC = 150A 4 IC = 60A 2 0 300 6 8 10 12 14 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE, Cies, Coes, Cres, (nF) 102 0 1 2 tf td(off) Cies 101 Coes 100 102 td(on) tr 101 VCC = 600V VGE = 15V RG = 2.2 Tj = 125C Inductive Load Cres 10-1 10-1 4 100 101 102 100 101 102 103 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) GATE CHARGE VS. VGE (INVERTER PART) 103 102 td(on) 101 VCC = 600V VGE = 15V IC = 150A Tj = 125C Inductive Load 101 GATE RESISTANCE, RG, () 102 REVERSE RECOVERY, Irr (A), trr (ns) tf tr 100 100 20 td(off) 102 VCC = 600V VGE = 15V RG = 2.2 Tj = 25C Inductive Load Irr trr 101 100 101 102 EMITTER CURRENT, IE, (AMPERES) 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 SWITCHING TIME, (ns) 3 20 103 102 VGE = 0V 4 18 COLLECTOR-CURRENT, IC, (AMPERES) Tj = 25C Tj = 125C 101 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 EMITTER CURRENT, IE, (AMPERES) 3 0 10 10 VGE = 15V Tj = 25C Tj = 125C SWITCHING TIME, (ns) COLLECTOR CURRENT, IC, (AMPERES) 250 200 4 Tj = 25C 15 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) IC = 150A 16 VCC = 400V VCC = 600V 12 8 4 0 0 250 500 750 1000 GATE CHARGE, QG, (nC) Rev. 3/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150DX-24A Dual IGBTMODTM NX-Series Module 150 Amperes/1200 Volts VCC = 600V VGE = 15V RG = 2.2 Tj = 125C Inductive Load Eon Eoff 100 101 102 103 101 VCC = 600V VGE = 15V IC = 150A Tj = 125C Inductive Load Eon Eoff 100 100 101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 600V VGE = 15V IE = 150A Tj = 125C Inductive Load NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth * (NORMALIZED VALUE) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 100 10-1 Err 10-2 100 100 101 GATE RESISTANCE, RG, () Rev. 3/09 102 102 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - TYPICAL) 10-2 10-1 100 VCC = 600V VGE = 15V RG = 2.2 Tj = 125C Inductive Load Err 101 100 101 102 103 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, () COLLECTOR CURRENT, IC, (AMPERES) 101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 102 102 102 102 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (INVERTER PART - TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (INVERTER PART - TYPICAL) 101 10-1 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.13C/W (IGBT) Rth(j-c) = 0.23C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 5