Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD™
NX-Series Module
150 Amperes/1200 Volts
CM150DX-24A
1Rev. 3/09
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM150DX-24A is a 1200V (VCES),
150 Ampere Dual IGBTMOD™
Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 150 24
Outline Drawing and Circuit Diagram
G2(38)
E1C2(24) E1C2(23)
Tr2
Di2 Di1 Tr1
E2(39)
E2
(47)
C1
(48)
Th
TH1
(1)
TH2
(2)
G1(15)
C1(22)
E1(16)
NTC
DETAIL "B"
A
D
E
FJ J
AR
Z
AA
AB
B
AH
AJ
AX
AW
AL
AM
AK
AE
AD
AS
AN AQ
AF
AG
AT
AU
AV
AP
G
H
P
C
X
T
T
S
S
Q
R
Q
N
V
U
U
W
AC (4 PLACES)
M
KKL
L
Y
(4 PLACES)
DETAIL "A"
DETAIL "B"
DETAIL "A"
12 345678910111213141516171819202122
23
24
48
47
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
Dimensions Inches Millimeters
A 5.98 152.0
B 2.44 62.0
C 0.67 17.0
D 5.39 137.0
E 4.79 121.7
F 4.33±0.02 110.0±0.5
G 3.89 99.0
H 3.72 94.5
J 0.53 13.5
K 0.15 3.8
L 0.28 7.25
M 0.30 7.75
N 1.95 49.54
P 0.9 22.86
Q 0.55 14.0
R 0.87 22.0
S 0.67 17.0
T 0.48 12.0
U 0.24 6.0
V 0.16 4.2
W 0.37 6.5
X 0.83 21.14
Y M6 M6
Dimensions Inches Millimeters
Z 1.53 39.0
AA 1.97±0.02 50.0±0.5
AB 2.26 57.5
AC 0.22 Dia. 5.5 Dia.
AD 0.67+0.04/-0.02 17.0+1.0/-0.5
AE 0.51 13.0
AF 0.27 7.0
AG 0.03 0.8
AH 0.81 20.5
AJ 0.12 3.0
AK 0.14 3.5
AL 0.21 5.4
AM 0.49 12.5
AN 0.15 3.81
AP 0.05 1.15
AQ 0.025 0.65
AR 0.29 7.4
AS 0.24 6.2
AT 0.17 Dia. 4.3 Dia.
AU 0.10 Dia. 2.5 Dia.
AV 0.08 Dia. 2.1 Dia.
AW 0.06 1.5
AX 0.49 12.5
CM150DX-24A
Dual IGBTMOD™ NX-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
2 Rev. 3/09
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol CM150DX-24A Units
Power Device Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Mounting Torque, M5 Mounting Screws — 31 in-lb
Mounting Torque, M6 Main Terminal Screws — 40 in-lb
Module Weight (Typical) — 330 Grams
Baseplate Flatness, On Centerline X, Y (See Below) — ±0 ~ +100 µm
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts
Inverter Sector
Collector-Emitter Voltage (G-E Short) VCES 1200 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (TC = 91°C)*1 I
C 150 Amperes
Peak Collector Current (Pulse)*3 I
CM 300 Amperes
Emitter Current (TC = 25°C)*1*4 IE*2 150 Amperes
Peak Emitter Current (Pulse)*3 I
EM*2 300 Amperes
Maximum Collector Dissipation (TC = 25°C)*1*4 P
C 960 Watts
*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond Tj(max) rating.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
23
24
48
47
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
0
0
0
Dimensions in mm (Tolerance: ±1mm)
IGBT FWDi NTC Thermistor
Chip Location (Top View)
0
21.2
32.6
31.3
73.5
21.2
42.5
73.5
43.8
34.2
36.2 Th
CHIP LOCATION (TOP VIEW)BASEPLATE FLATNESS
MEASUREMENT POINT
HEATSINK SIDE
– : CONCAVE
+ : CONVEX
– : CONCAVE
X
Y
+ : CONVEX
HEATSINK SIDE
CM150DX-24A
Dual IGBTMOD™ NX-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
3Rev. 3/09
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Inverter Sector
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current ICES V
CE = VCES, VGE = 0V — — 1.0 mA
Gate-Emitter Threshold Voltage VGE(th) I
C = 15mA, VCE = 10V 6 7 8 Volts
Gate Leakage Current IGES V
GE = VGES, VCE = 0V — — 0.5 µA
Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C*5 — 2.0 2.6 Volts
I
C = 150A, VGE = 15V, Tj = 125°C*5 — 2.2 — Volts
IC = 150A, VGE = 15V, Chip — 1.9 — Volts
Input Capacitance Cies — — 23.0 nF
Output Capacitance Coes V
CE = 10V, VGE = 0V — — 2.0 nF
Reverse Transfer Capacitance Cres — — 0.45 nF
Total Gate Charge QG V
CC = 600V, IC = 150A, VGE = 15V — 675 — nC
Inductive Turn-on Delay Time td(on) — — 130 ns
Load Turn-on Rise Time tr V
CC = 600V, IC = 150A, — — 100 ns
Switch Turn-off Delay Time td(off) V
GE = ±15V, — — 450 ns
Time Turn-off Fall Time tf R
G = 2.2Ω, IE = 150A, — — 600 ns
Reverse Recovery Time trr*2 Inductive Load Switching Operation — — 150 ns
Reverse Recovery Charge Qrr*2 — 6 — µC
Emitter-Collector Voltage VEC*2 I
E = 150A, VGE = 0V, Tj = 25°C*5 — 2.6 3.4 Volts
I
E = 150A, VGE = 0V, Tj = 125°C*5 — 2.16 — Volts
I
E = 150A, VGE = 0V, Chip — 2.5 — Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Module Lead Resistance Rlead Main Termnals-Chip (Per Switch) — 1.6 — mΩ
Thermal Resistance, Junction to Case** Rth(j-c)Q Per IGBT*1 — — 0.13 °C/W
Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi*1 — — 0.23 °C/W
Contact Thermal Resistance** Rth(c-f) Case to Heatsink (Per 1 Module) — 0.015 — °C/W
Thermal Grease Applied*1*7
Internal Gate Resistance RGint T
C = 25°C — 0 — Ω
External Gate Resistance RG 2 — 21 Ω
NTC Thermistor Sector, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance RTH T
C = 25°C*1 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C, R100 = 493Ω*1 –7.3 — +7.8 %
B Constant B(25/50) B = (InR1 – InR2) / (1/T1 – 1/T2)*6 — 3375 — K
Power Dissipation P25 T
C = 25°C*1 — — 10 mW
**Thermal resistance values are per 1 element.
*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*6 R1: Resistance at Absolute Temperature T1(K), R2: Resistance at Absolute Temperature T2(K), T(K) = T(°C) + 273.15
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
CM150DX-24A
Dual IGBTMOD™ NX-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
4 Rev. 3/09
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
100102
102
101
10-1
100
101
0 1 32 4
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
102
103
EMITTER CURRENT, IE, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10
6 8 10 1412 16 18 20
8
6
4
2
0
Tj = 25°C
Tj = 25°C
Tj = 125°C
VGE = 0V
Cies
Coes
Cres
IC = 300A
IC = 150A
IC = 60A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
0 2 4 6 8 10
0
VGE = 20V
10
11
12
13
15
9
Tj = 25°C
300
100
50
200
150
250
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
4
3
0
2
1
030025020050 100 150
VGE = 15V
Tj = 25°C
Tj = 125°C
10-1
COLLECTOR CURRENT, IC, (AMPERES)
103
101102
102
100
101
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 2.2Ω
Tj = 125°C
Inductive Load
tf
103
GATE RESISTANCE, RG, (Ω)
103
100101
102
100
101
SWITCHING TIME, (ns)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 150A
Tj = 125°C
Inductive Load
tf
102
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
(INVERTER PART)
20
0
16
12
8
4
0
250 500 750 1000
VCC = 600V
VCC = 400V
IC = 150A
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
103
101102
101
102
100
103
VCC = 600V
VGE = ±15V
RG = 2.2Ω
Tj = 25°C
Inductive Load
Irr
trr
REVERSE RECOVERY, Irr (A), trr (ns)
CM150DX-24A
Dual IGBTMOD™ NX-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
5Rev. 3/09
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.13°C/W
(IGBT)
Rth(j-c) =
0.23°C/W
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
102
100101
100
101VCC = 600V
VGE = ±15V
IC = 150A
Tj = 125°C
Inductive Load
102
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
Eon
Eoff
GATE RESISTANCE, RG, (Ω)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
100101
100
101
VCC = 600V
VGE = ±15V
IE = 150A
Tj = 125°C
Inductive Load
102
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
101102
101
100
VCC = 600V
VGE = ±15V
RG = 2.2Ω
Tj = 125°C
Inductive Load
103
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(INVERTER PART - TYPICAL)
Err
Err
VCC = 600V
VGE = ±15V
RG = 2.2Ω
Tj = 125°C
Inductive Load
Eon
Eoff
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
102
101102
101
100
103
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)