FARRIS SEMICONDUCTOR a July 1994 HFA1130/883 Output Clamping, 850MHz Current Feedback Amplifier Features Description This Circuit is Processed in Accordance to MIL-STD- 883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. * User Programmable Output Voltage Clamps The HFA1130/883 is a high speed, wideband current feed- back amplifier featuring programmable output clamps. Built with Harris proprietary complementary bipolar UHF-1 pro- cess, it is the fastest monolithic amplifier available from any semiconductor manufacturer. * Low Distortion (HD3, 30MHz) .......... ~84dBe (Typ) This amplifier is the ideal choice for high frequency applica- Wide -3dB Bandwidth ............... 850MHz (Typ) _ tions requiring output limiting, especially those needing ultra fast overdrive recovery times. The output clamp function * Very High Slow Rate ............... 2300V/i8 (TYP) atiows the designer to set the maximum positive and nega- Fast Settling (0.1%) ......0. 0c. ccc e eee 1ins (Typ) _ tive output levels, thereby protecting later stages from dam- age or input saturation. The sub-nanosecond overdrive * Excellent Gain Flatness (to SOMHz)..... 0.054B (Typ) recovery time quickly returns the amplifier to linear operation * High Output Current ................0. 65mA (Typ) _ following an overdrive condition. Fast Overdrive Recovery................ <ins (Typ) The HFA1130/883s wide bandwidth, fast settling character- istic, and low output impedance, coupled with the output Applications clamping ability, make this amplifier ideal for driving fast A/D converters. * Residue Amplifier Component and composite video systems will also benefit from this amplifiers performance, as indicated by the excel- lent gain flatness, and 0.03%/0.05 Degree Differential Gain/ Phase specifications (R, = 75Q). * Video Switching and Routing Pulse and Video Amplifiers * Wideband Amplifiers RF/IF Signal Processing Ordering Information Flash A/D Driver TEMPERATURE * Medical Imaging Systems PART NUMBER RANGE PACKAGE HFA1130MJ/883 -55C to +125C | 8 Lead CerDIP HFA1130ML/883 | -55C to +125C | 20 Lead Ceramic LCC Pinouts HFA1130/883 HFA1130/883 (CERDIP) (CLCC)} TOP VIEW TOP VIEW wy ggeee ne [i] re] Vu an [2] 7] v+ 4 c +n [a] [6] our IN v- [4 sly LE fe] v. ne|6 +IN NC CAUTION: These davices are sensitive to electrostatic discharge. Users should follow proper |.C. Handling Procedures. Copyright Harris Corporation 1994 Opyrig) P 3-204 Spec Number 511082-883 File Number 3625.1Specifications HFA1130/883 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- 0.6... cece eee ee eee 12V Thermal Resistance Oy 8Jc Differential Input Voltage... 0.00.0... 0.00. eee eee eee eee 5V CerDIP Package ................06. T15CAW -30C/W Voltage at Either input Terminal..................005- V+ to V- Ceramic LCC Package ............-- TSCWW -23C/AW Voltage at Vy or V; Terminal............... (V+) + 2V to (V-)-2V Maximum Package Power Dissipation at +75C Output Current (50% Duty Cycle)... 0... cece eee +56mA CerDIP Package ....... 0... cece cee eee e eee e teeta 0.87W Junction Temperature... 6... cece cece eee eae +175C Ceramic LOC Package 0.0.0.0... . cece cece nents 1.33W ESD Rating. ..... 0... cece eee e ccc e eee te rene eees <2000V Package Power Dissipation Derating Factor above +75C Storage Temperature Range .............. 65C < Ty s +150C CerDIP Package .... 0... cece cece eee cece nes 8.7mWPC Lead Temperature (Soldering 10s).................--- +300C Ceramic LCC Package ...........-.-0 cece eee 13.3mW/C CAUTION: Stresses above those fisted in Absolute Maximum Ratings may cause permanent damage to the device. This is a strass only rating and operation of the device at these or any other conditions above those indk in the op J ions af this specification is not implied. Operating Conditions Operating Supply Voltage (tVg). 0... eee eee t5V =R, 2500 Operating Temperature Range............. -55C < Ta $ +125C TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: Vouppry = t5V, Ay = +1, Re = 5100, Aggurce = 02, Ry, = 1002, Vour = OV, Unless Otherwise Specified. GROUP A LIMITS PARAMETERS SYMBOL CONDITIONS SUBGROUPS | TEMPERATURE | MIN | MAX | UNITS Input Offset Voltage Vio Vom = OV 1 +25C 6 6 mv a 2,3 +125C, 55C | -10 10 mV $2 Common Mode CMAR | AVcy=+t2V 1 +25C 40 : dB 9 iz Rejection Ratio V+ = 3V, V- = -7V 23 125C, 55C 38 7 dB ES V+ = 7V, V- = -3V , co Power Supply PSRAP | AVgyp =21.25V 1 425C 45 - dB as Rejection Ratio V+ = 6.25V, V- = -5V 2,3 +125C, -55C 42 7 dB 9 V+ =3,75V, V- = -5V PSRRN_ | AVgyp = +1.25V 1 +25C 45 - dB V+ = BV, V- = -6.26V 2,3 +125C, -55C 42 - 0B V+ = 5V, V- = -3.75V Non-Inverting Input Iasp Vou = OV 1 +25C -40 40 pA (+N) Current 2,3 +125C, -55C -65 65 yA +IN Current Common CMSige | 4Vcy = +2V 1 +25C : 40 pay Mode Sensitivity V+=3V, V-=-7V 23 +125C, -55C . 50 pav V+ =7V, V- = -3V , , +IN Resistance +Rin Note 1 1 +25C. 25 - kQ 2,3 +125C, -55C 20 : kn inverting Input (-IN) lasn Vom = OV 1 +25C -50 50 pA Current 2,3 +125C, -55C 75 75 A -IN Current Common CMSien | 4Vcw =+2V 1 +25C : 7 AV Mode Sensitivity V+=3V, V-=-7V 2.3 +125C, -55C . 10 WAV V+ = 7V, V- = -3V , , -IN Current Power PPSSign | AVsup = +1.25V 1 425C : 15 nav Supply Sensitivity V+ = 6.25V, V- = -5V 2,3 +125C, -55C . 27 pAV V+ = 3,75V, V- = -5V , NPSSign | AVguyp = +1.25V 1 +25C - 15 pay V+ = 5V, V- = -6.25V 2,3 +125C, -55C ~ 27 pAv V+ = BV, V- = -3.75V Output Voitage Swing Vopr00 Ay =-1 Vin = 3.5V 1 +25C 3 : Vv RA, =1002 y= -3V 2,3 +125C, -55C 2.5 - Vv Vonioo | Ay=-t Vin =+3.5V 1 +25C - 3 Vv RP, =1002 Vy, = +3V 2,3 +125C, -55C - 2.5 v Spec Number 511082-883 3-205Specifications HFA1130/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Davice Tested at: Vguppiy = 45V, Ay = +1, Re = 5102, Reource = 00, Ry, = 1002, Vout = OV, Unless Otherwise Specified. GROUP A LIMITS PARAMETERS SYMBOL CONDITIONS SUBGROUPS TEMPERATURE MIN MAX UNITS Output Voltage Swing Vopso Ay=-t Vin = -3V 1,2 +25C, +125C 2.5 : v RL = 502 y,,=-2V 3 -55C 1.5 - Vv Vonso | Ay=-1 Vin = 4+3V 1,2 +25C, +125C - 25 Vv PR, =50Q Vy = 42V 3 -55C - 1.5 V Output Current tlour Note 2 1,2 425C, +125C 50 - mA 3 -55C 30 : mA dour Note 2 1,2 +25C, +125C - -50 mA 3 -55C . -30 mA Quiescent Power lec R, = 100Q 1 +25C 14 26 mA Supply Current 2,3 +125C, -55C ~ 33 mA lee R, = 100 1 425C -26 -14 mA 2,3 +125C, -55C -33 - mA Clamp Accuracy VHCLMP | Ay=-1, Vin =-2V 1 +25C 7125 125 mv Vy = 1 2,3 4+125C, -55C 200 | 200 mv ViCLMP | Ay=-1, Viy =+2V 1 +25C 125 125 mV Vi=-tV 2,3 +125C, -55C -200 | 200 mV Clamp Input Current VyBIAS | Vy=1V 1 +25C - 200 pa 2,3 +125C, -55C - 300 pA ViBIAS | VL =-1V 1 425C -200 - pA 2,3 +125C, -55C -300 - pA NOTES: 1. Guaranteed from +IN Common Mode Rejection Test, by: +Riy = 1/CMSigp. 2. Guaranteed from Voyy Test with A, = 50Q, by: lout = Voy1/502. TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Table 2 Intentionally Left Biank. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: Vsuppyy = t5V, Ay = +2, Re = 3609, Ry, = 100Q, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS -3dB Bandwidth BW(-1) Ay =-1, Ag = 4300 1 +25C 300 - MHz Vour = 200mVp.p BW(+1) Ay = +1, Re = 810 1 +25C. 550 - MHz Vout = 200mVp.p BW(+2) | Ay = +2, Voyr = 200mVp.p 1 +25C 350 - MHz Gain Flatness GF30 Ay=+2, Re = 510, fs 30MHz 1 425C. - 0.04 dB Vout = 200MVp.p GF50 Ay = +2, Ap = 10Q, fs SOMHz 1 +25C - +0.10 dB Vour = 200mVp.p GF100 | Ay=+2,Re=5100,f< 100MHz, 1 425C : +0.30 dB Vout = 200MVp.p Spec Number 511082-883 3-206Specifications HFA1130/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: Vsgyppiy = t5V, Ay = +2, Re = 3602, Ry = 100Q, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS Slew Rate +SR(41) | Ay = 41, Rp = 5102 1,2 425C 1200 : Vius Vout = 5Vp.p SAH) | Ay=+1, Rp = 5100 1,2 425C 1100 . Vius Vout = 5Vp.p +SR(+2) | Ay = +2, Voyr =5Vpp 1,2 +25C 1650 - Vius -SR(+2) | Ay = +2, Vou = 5Vep 1,2 +25C 1500 - Vius Rise and Fall Time Tr Ay = +2, Vout = 0.5Vp.p 1,2 +25C - 1 ns Tr Ay = +2, Vout = 0.5Vp.p 1,2 +25C - 1 ns Overshoot +0S Ay = +2, Vouy = 0.5Vp.p 1,3 +25C - 25 % -OS Ay = +2, Vout = 0.5Vp.p 1, 3 +25C - 20 % Settling Time TS(0.1) Ay = +2, Re = 5109 1 +25C. - 20 ns Vour = 2V to OY, to 0.1% TS(0.05) | Ay=+2, Rp = 5102 1 425C - 33 ns Vout = 2V to OV, to 0.05% 2nd Harmonic HD2(30) Ay = +2, f = 30MHz 1 +25C - -48 dBe - Distortion Vour = 2Vp.p 32 HD2(50) | Ay = +2, f= 50MHz 1 +25C : 45 dBc o z _9 eu Vout = 2Vp.p qa H02(100) | Ay = +2, f= 100MHz 1 +25C - -35 dBc oa. Ws Vout = 2Vp.p a< 3rd Harmonic HD3(30) Ay = +2, f = 30MHz 1 +25C - -65 dBc Distortion Vout = 2Vp.p HD3(50) Ay = +2, f = SOMHz 1 +25C : -60 dBc Vout = 2Vp.p HD3(100) | Ay = +2, f= 100MHz 1 +25C : -40 dBc Vout = 2Vp.p NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param- eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot-to-lot and within lot variation. 2. Measured between 10% and 90% points. 3. For 200ps input transition times. Overshoot decreases as input transition timas increase, especially for Ay = +1. Please refer to Performance Curves. TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1) Interim Electrical Parameters (Pre Burn-in) 1 Final Electrical Test Parameters 1 (Note 1), 2,3 Group A Test Requirements 1,2,3 Groups C and D Endpoints 1 NOTE: 1. PDA applies to Subgroup 1 only. Spec Number 511082-883 3-207HFA1130/883 Die Characteristics DIE DIMENSIONS: 63 x 44x 19 mils + 1 mils 1600 x 1130 x 483m + 25.4um METALLIZATION: Type: Metal 1: AlCu(2%)/TIW Type: Metal 2: AlCu(2%) Thickness: Metal 1:8kKA+0.4kA Thickness: Meta! 2: 16kA + 0.8kA GLASSIVATION: Type: Nitride Thickness: 4kA + 0.5kA WORST CASE CURRENT DENSITY: 2.0 x 105 Alem? at 47.5mA TRANSISTOR COUNT: 52 SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-) Metallization Mask Layout HFA1130/883 +IN " [0070R es -IN V- Vv. BAL BAL Va Ve u BOOTOAL OUT Spec Number 511082-883 3-208