T4-LDS-0009-1, Rev. 1 (121484) ©2012 Microsemi Corporation Page 1 of 8
2N6849U
Compliant P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/564
Qualified Levels:
JAN, JAN TX, JANTXV
and JANS
DESCRIPTION
This 2N6849U switching transistor is military qualifi ed up to the JANS level for hi gh-reliability
applications. This device is also a vailable i n a thru hole TO-205AF package. Microsemi also
of fers numerous oth er transistor products to meet higher and lower power rat ings with vari ous
switching speed requirements in b oth th r ough-hol e and surface-mount pack ages .
U-18 LCC
Package
Also available in:
TO-205AF (TO-39)
package
(Leaded Top Hat)
2N6849
Important: For the latest infor mation, visit our website http://www.microsemi.com.
FEATURES
• Sur face mount equiv alent of JE DEC registered 2N6849 number.
• JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/564.
(See part nomenclature for all avai lable options.)
• RoHS compl iant by design.
APPLICATIONS / BENE FITS
• Low profile surface mount for crowded areas .
• Military and other high-reliability applications.
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road B usiness Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions
Symbol
Value
Unit
Operating & Storage Junction Temperature Range
TJ & Tstg
-55 to +150
°C
Thermal Resistance Junction-to-Case
RӨJC
5.0
oC/W
Total Power Dissipation
A
(1)
PT
0.8
25
W
Drain-Source Voltage, dc
VDS
-100
V
Gate-Source Voltage, dc
VGS
± 20
V
Drain Current, dc @ TC = +25 ºC (2)
ID1
-6.5
A
Drain Current, dc @ TC = +100 ºC (2)
ID2
-4.1
A
Off-State Current (Peak Total Value) (3)
IDM
-25
A (pk)
Source Current
IS
-6.5
A
Notes: 1. Derate linearly 0.2 W/°C for TC > +2 5 °C.
2. The following formula derives the maximum theoretical ID limit. ID is also l imited by package and
interna l wi res and may be limited due to pin dia met er.
3. IDM = 4 x ID1 as calculated in note 2.
T4-LDS-0009-1, Rev. 1 (121484) ©2012 Microsemi Corporation Page 2 of 8
2N6849U
M ECHANICAL and PACKAG ING
• CASE: Ceramic LCC-18 with kovar gold plated lid.
• TERMINALS: Gold plating over nickel.
• MARKING: Manufacturer’s ID, part number, date code, ESD symbol at pin 1 location.
• TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N6849 U
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
Surface Mount package
JEDEC type number
(see Electrical Characteris tics
table)
SYMBOL S & DEFI NITIONS
Symbol
Definition
di/dt
Rate o f chan ge of diode current while in reverse-recover y mode, recorded as maximum value.
IF
Forward current
RG
Gate drive impedance
VDD
Drain supply voltage
VDS
Drain source voltage, dc
VGS
Gate source voltage, dc
T4-LDS-0009-1, Rev. 1 (121484) ©2012 Microsemi Corporation Page 3 of 8
2N6849U
ELECTRICAL CHARACTE RISTI CS @ TA = +25 ° C , unless otherwise n oted
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Drain-S ource Breakd own Voltag e
VGS = 0 V, ID = -1.0 mA
V(BR)DSS -100 V
Gate-Source Voltag e ( Threshold)
VDS ≥ VGS, ID = -0.25 mA
VDS ≥ VGS, ID = -0.25 m A, TJ = +125°C
VDS ≥ VGS, ID = -0.25 m A, TJ = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
-2.0
-1.0
-4.0
-5.0
V
G ate Current
VGS = ± 20 V, VDS = 0 V
VGS = ± 20 V, VDS = 0 V, TJ = +125°C
IGSS1
IGSS2
±100
±200 nA
Drain Current
VGS = 0 V, VDS = -80 V IDSS1 -25 µA
Drain Current
VGS = 0 V, VDS = -80 V , TJ = +125 °C IDSS2
-0.25 mA
Static Drain -Sou r ce On-St ate Res istance
VGS = -10 V, ID = -4.1 A puls ed rDS(on)1 0.30 Ω
Static Drain -Sou r ce On-St ate Res istance
VGS = -10 V, ID = -6.5 A puls ed rDS(on)2 0.32 Ω
Static Drain -Sou r ce On-St ate Res istance
TJ = +125°C
VGS = -10 V, ID = -4.1 A puls ed
rDS(on)3
0.54
Ω
Diode F orwar d Volt age
VGS = 0 V, ID = -6.5 A pul s e d VSD -4.3 V
DYNAMIC CHARACTE RISTICS
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
G ate Charge:
On-State Gate Charge
VGS = -10 V, ID = -6.5 A, VDS = -50 V Qg(on) 34.8 nC
G ate t o Source C harge
VGS = -10 V, ID = -6.5 A, VDS = -50 V Qgs 6.8 nC
G ate t o D r ain C harge
VGS = -10 V, ID = -6.5 A, VDS = -50 V Qgd 23.1 nC
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2N6849U
ELECTRICAL CHARACTERI STICS @ TA = +2 5 ° C , unles s otherwise noted (continued)
SW ITCHING CHAR ACT ERIST ICS
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
Turn-on delay tim e
ID = -6.5 A, VGS = -10 V, RG = 7.5 Ω, VDD = -40 V
td(on)
60
ns
Rins e t ime
ID = -6.5 A, VGS = -10 V, RG = 7.5 Ω, VDD = -40 V
tr
140
ns
Turn-off delay time
ID = -6.5 A, VGS = -10 V, RG = 7.5 Ω, VDD = -40 V
td(off)
140
ns
Fall time
ID = -6.5 A, VGS = -10 V, RG = 7.5 Ω, VDD = -40 V
tf
140
ns
Diode Reverse Recovery Tim e
di/dt ≤ -100 A/µ s, VDD ≤ -50 V, IF = -6.5 A
trr
250
ns
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2N6849U
GRAPHS
t1, Rect angle Pulse Duration ( seconds)
FIGURE 1 – Normalized Transient Thermal Impedance
TC, CASE TEMPERATURE (°C)
FIGURE 2 – Maximum Drain Current vs Case Temperature
Thermal Response (Z
ӨJC
)
I
D,
DRAIN CURRE NT (A)
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2N6849U
GRAPHS (continued)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3 – Maximum Safe Operating Area
ID, DRAIN CURRENT (AMPERES)
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2N6849U
PACKAGE DIM ENSIONS
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
.345
.360
8.77
9.14
BW
.280
.295
7.12
7.49
CH
.095
.115
2.42
2.92
LL1
.040
.055
1.02
1.39
LL2
.055
.065
1.40
1.65
LS
.050 BSC
1.27 BSC
LS1
.025 BSC
0.635 BSC
LS2
.008 BSC
0.203 BSC
LW
.020
.030
0.51
0.76
Q1
.105 REF
2.67 REF
Q2
.120 REF
3.05 REF
Q3
.045
.055
1.14
1.40
TL
.070
.080
1.78
2.03
TW
.120
.130
3.05
3.30
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general
information only.
3. In accordance with ASME Y14.5M,
diameters are equivalent to Φx
symbology.
4. Ceramic package only.
T4-LDS-0009-1, Rev. 1 (121484) ©2012 Microsemi Corporation Page 8 of 8
2N6849U
PAD LAYOUT
PAD ASSIGNM ENTS