2N6849U Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849U switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a thru hole TO-205AF package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Surface mount equivalent of JEDEC registered 2N6849 number. * JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/564. U-18 LCC Package (See part nomenclature for all available options.) * RoHS compliant by design. Also available in: APPLICATIONS / BENEFITS * Low profile surface mount for crowded areas. * Military and other high-reliability applications. TO-205AF (TO-39) package (Leaded Top Hat) 2N6849 MAXIMUM RATINGS @ T A = +25 C unless otherwise stated Parameters / Test Conditions Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case Total Power Dissipation @ TA = +25 C (1) @ TC = +25 C Drain-Source Voltage, dc Gate-Source Voltage, dc (2) Drain Current, dc @ TC = +25 C (2) Drain Current, dc @ TC = +100 C (3) Off-State Current (Peak Total Value) Source Current Notes: Symbol Value TJ & Tstg R JC -55 to +150 5.0 0.8 25 -100 20 -6.5 -4.1 -25 -6.5 PT V DS V GS I D1 I D2 I DM IS Unit C C/W o W V V A A A (pk) A 1. Derate linearly 0.2 W/C for T C > +25 C. 2. The following formula derives the maximum theoretical I D limit. I D is also limited by package and internal wires and may be limited due to pin diameter. MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 3. I DM = 4 x I D1 as calculated in note 2. Website: www.microsemi.com T4-LDS-0009-1, Rev. 1 (121484) (c)2012 Microsemi Corporation Page 1 of 8 2N6849U MECHANICAL and PACKAGING * * * * * CASE: Ceramic LCC-18 with kovar gold plated lid. TERMINALS: Gold plating over nickel. MARKING: Manufacturer's ID, part number, date code, ESD symbol at pin 1 location. TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6849 U Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial Symbol di/dt IF RG V DD V DS V GS Surface Mount package JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0009-1, Rev. 1 (121484) (c)2012 Microsemi Corporation Page 2 of 8 2N6849U ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Symbol Min. V (BR)DSS -100 Gate-Source Voltage (Threshold) V DS V GS , I D = -0.25 mA V DS V GS , I D = -0.25 mA, T J = +125C V DS V GS , I D = -0.25 mA, T J = -55C V GS(th)1 V GS(th)2 V GS(th)3 -2.0 -1.0 Gate Current V GS = 20 V, V DS = 0 V V GS = 20 V, V DS = 0 V, T J = +125C I GSS1 I GSS2 100 200 nA Drain Current V GS = 0 V, V DS = -80 V I DSS1 -25 A Drain Current V GS = 0 V, V DS = -80 V, T J = +125 C I DSS2 -0.25 mA Static Drain-Source On-State Resistance V GS = -10 V, I D = -4.1 A pulsed r DS(on)1 0.30 Static Drain-Source On-State Resistance V GS = -10 V, I D = -6.5 A pulsed r DS(on)2 0.32 r DS(on)3 0.54 V SD -4.3 V Max. Unit Drain-Source Breakdown Voltage V GS = 0 V, I D = -1.0 mA Static Drain-Source On-State Resistance T J = +125C V GS = -10 V, I D = -4.1 A pulsed Diode Forward Voltage V GS = 0 V, I D = -6.5 A pulsed Max. Unit V -4.0 V -5.0 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: Symbol Min. On-State Gate Charge V GS = -10 V, I D = -6.5 A, V DS = -50 V Q g(on) 34.8 nC Gate to Source Charge V GS = -10 V, I D = -6.5 A, V DS = -50 V Q gs 6.8 nC Gate to Drain Charge V GS = -10 V, I D = -6.5 A, V DS = -50 V Q gd 23.1 nC T4-LDS-0009-1, Rev. 1 (121484) (c)2012 Microsemi Corporation Page 3 of 8 2N6849U ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-on delay time I D = -6.5 A, V GS = -10 V, R G = 7.5 , V DD = -40 V t d(on) 60 ns Rinse time I D = -6.5 A, V GS = -10 V, R G = 7.5 , V DD = -40 V tr 140 ns Turn-off delay time I D = -6.5 A, V GS = -10 V, R G = 7.5 , V DD = -40 V t d(off) 140 ns Fall time I D = -6.5 A, V GS = -10 V, R G = 7.5 , V DD = -40 V tf 140 ns Diode Reverse Recovery Time di/dt -100 A/s, V DD -50 V, I F = -6.5 A t rr 250 ns T4-LDS-0009-1, Rev. 1 (121484) (c)2012 Microsemi Corporation Page 4 of 8 2N6849U Thermal Response (ZJC) GRAPHS t 1 , Rectangle Pulse Duration (seconds) ID, DRAIN CURRENT (A) FIGURE 1 - Normalized Transient Thermal Impedance T C , CASE TEMPERATURE (C) FIGURE 2 - Maximum Drain Current vs Case Temperature T4-LDS-0009-1, Rev. 1 (121484) (c)2012 Microsemi Corporation Page 5 of 8 2N6849U ID, DRAIN CURRENT (AMPERES) GRAPHS (continued) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3 - Maximum Safe Operating Area T4-LDS-0009-1, Rev. 1 (121484) (c)2012 Microsemi Corporation Page 6 of 8 2N6849U PACKAGE DIMENSIONS BL BW CH LL1 LL2 LS Dimensions Inches Millimeters Min Max Min Max .345 .360 8.77 9.14 .280 .295 7.12 7.49 .095 .115 2.42 2.92 .040 .055 1.02 1.39 .055 .065 1.40 1.65 .050 BSC 1.27 BSC LS1 LS2 LW Q1 Q2 Q3 TL TW .025 BSC .008 BSC .020 .030 .105 REF .120 REF .045 .055 .070 .080 .120 .130 Ltr 0.635 BSC 0.203 BSC 0.51 0.76 2.67 REF 3.05 REF 1.14 1.40 1.78 2.03 3.05 3.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 4. Ceramic package only. T4-LDS-0009-1, Rev. 1 (121484) (c)2012 Microsemi Corporation Page 7 of 8 2N6849U PAD LAYOUT PAD ASSIGNMENTS T4-LDS-0009-1, Rev. 1 (121484) (c)2012 Microsemi Corporation Page 8 of 8