N CLC425 Ultra Low Noise Wideband Op Amp General Description Features The CLC425 combines a wide bandwidth (1.9GHz GBW) with very Hz, 1.6pA/ Hz) and low dc errors (100 V low input noise (1.05nV/ V/C drift) to provide a very precise, wide dynamic-range VOS, 2 op amp offering closed-loop gains of 10. Singularly suited for very wideband high-gain operation, the CLC425 employs a traditional voltage-feedback topology providing all the benefits of balanced inputs, such as low offsets and drifts, as well as a 96dB open-loop gain, a 100dB CMRR and a 95dB PSRR. The CLC425 also offers great flexibility with its externally adjustable supply current, allowing designers to easily choose the optimum set of power, bandwidth, noise and distortion performance. Operating from 5V power supplies, the CLC425 defaults to a 15mA quiescent current, or by adding one external resistor, the supply current can be adjusted to less than 5mA. Applications The CLC425's combination of ultra-low noise, wide gain-bandwidth, high slew rate and low dc errors will enable applications in areas such as medical diagnostic ultrasound, magnetic tape & disk storage, communications and opto-electronics to achieve maximum high-frequency signal-to-noise ratios. 1.9GHz gain-bandwidth product 1.05nV/Hz input voltage noise 0.8pA/Hz @ Icc < 5mA 100V input offset voltage, 2V/C drift 350V/s slew rate 15mA to 5mA adjustable supply current Gain range 10 to 1,000V/V Evaluation boards & simulation macromodel 0.9dB NF @ Rs = 700 CLC425 Ultra Low Noise Wideband Op Amp June 1999 Instrumentation sense amplifiers Ultrasound pre-amps Magnetic tape & disk pre-amps Photo-diode transimpedance amplifiers Wide band active filters Low noise figure RF amplifiers Professional audio systems Low-noise loop filters for PLLs Equivalent Input Voltage Noise 10 CLC425AJP CLC425AJE CLC425A8B -40C to +85C -40C to +85C -55C to +125C CLC425ALC -40C to +85C CLC425AMC -55C to +125C CLC425AJM5 -40C to +85C DESC SMD number : 5962-93259. 8-pin PDIP 8-pin SOIC 8-pin CERDIP, MIL-STD-883, Level B dice dice, MIL-STD-883, Level B 5-pin SOT Voltage Noise (nV/Hz) The CLC425 is available in the following versions: 1.05nV/Hz 1 100 1k Pinout SOT23-5 Vo 1999 National Semiconductor Corporation Printed in the U.S.A. 10M 100M Pinout DIP & SOIC VCC VEE Vnon-inv 10k 100k 1M Frequency (Hz) Vinv NC 1 8 Rp Vinv 2 - 7 +Vcc Vnon-inv 3 + 6 Vout -Vcc 4 (optional) 5 NC http://www.national.com CLC425 Electrical Characteristics (V CC PARAMETERS Ambient Temperature CONDITIONS CLC425 AJ ; Rg = 26.1 ; RL = 100 ; unless noted) = 5V; AV = +20; Rf =499 TYP +25C MIN/MAX RATINGS -40C +25C +85C UNITS SYMBOL FREQUENCY DOMAIN RESPONSE gain bandwidth product Vout < 0.4Vpp -3dB bandwidth Vout < 0.4Vpp Vout < 5.0Vpp gain flatness Vout < 0.4Vpp peaking DC to 30MHz rolloff DC to 30MHz linear phase deviation DC to 30MHz 1.9 95 40 1.5 75 30 1.5 75 30 1.0 50 20 GHz MHz MHz GBW SSBW LSBW 0.3 0.1 0.7 0.7 0.7 1.5 0.5 0.5 1.5 0.7 0.7 2.5 dB dB GFP GFR LPD TIME DOMAIN RESPONSE rise and fall time settling time to 0.2% overshoot slew rate 3.7 22 5 350 4.7 30 12 250 4.7 30 10 250 7.0 40 12 200 ns ns % V/s TRS TSS OS SR 48 65 48 65 46 60 dBc dBc dBm HD2 HD3 IMD 1.05 1.6 0.9 1.25 4.0 1.25 2.5 1.8 2.5 nV/Hz pA/Hz dB VN ICN NF 96 100 2 12 - 100 0.2 3 95 100 15 77 1000 8 40 - 250 3.4 50 82 88 18 86 800 86 1000 4 20 - 120 2.0 25 86 90 16 dB V V/C A nA/C A nA/C dB dB mA AOL VIO DVIO IB DIB IIO DIIO PSRR CMRR ICC 2 6 1.5 1.9 5 3.8 3.4 3.8 80 80 0.6 1 2 3 50 3.5 2.8 3.4 70 45 1.6 3 2 3 10 3.7 3.2 3.5 70 55 1.6 3 2 3 10 3.7 3.2 3.5 70 55 M k pF pF m V V V mA mA RINC RIND CINC CIND ROUT VO VOL CMIR IOP ION 0.4V step 2V step 0.4V step 2V step DISTORTION AND NOISE RESPONSE 1Vpp, 10MHz 2nd harmonic distortion 3rd harmonic distortion 1Vpp, 10MHz 10MHz 3rd order intermodulation intercept equivalent noise input voltage 1MHz to 100MHz current 1MHz to 100MHz noise figure RS = 700 STATIC DC PERFORMANCE open-loop gain *input offset voltage average drift *input bias current average drift input offset current average drift power supply rejection ratio common mode rejection ratio *supply current - 53 - 75 35 DC DC DC RL= MISCELLANEOUS PERFORMANCE input resistance common-mode differential-mode input capacitance common-mode differential-mode output resistance closed loop output voltage range RL= RL=100 input voltage range common mode output current source sink ____ 20 ____ 2.0 ____ 88 92 16 Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are determined from tested parameters. Absolute Maximum Ratings Vcc Iout short circuit protected to ground, however maximum reliabiliy Recommended gain range Package Thermal Resistance -40C to +85C -65C to +150C +300C 1000V Reliability Information Transistor count http://www.national.com 10 to 1,000V/V Notes: * AJ : 100% tested at +25C. 125mA Vcc +150C is obtained if Iout does not exceed... common-mode input voltage maximum junction temperature operating temperature range: AJ storage temperature range lead temperature (soldering 10 sec) ESD (human body model) Miscellaneous Ratings 7V 31 2 Package JC JA AJP AJE A8B AJM5 70C/W 65C/W 45C/W 115C/W 125C/W 145C/W 135C/W 185C/W 3 http://www.national.com (A) http://www.national.com 4 +Vcc Vin Total Input Noise vs. Source Resistance In order to determine maximum signal-to-noise ratios from the CLC425, an understanding of the interaction between the amplifier's intrinsic noise sources and the noise arising from its external resistors is necessary. 6.8F 7 3 0.1F Rs Vs 6 CLC425 RT Vout 2 6.8F Figure 3 describes the noise model for the non-inverting amplifier configuration showing all noise sources. In addition to the intrinsic input voltage noise (en) and current noise (in=in+=in-) sources, there also exists thermal voltage noise ( et = 4kTR ) associated with each of the external resistors. Equation 1 provides the general form for total equivalent input voltage noise density (eni). Equation 2 is a simplification of Equation 1 that assumes 4 -Vcc Rseq = Rs || RT 0.1F Rf Rg Av = 1 + Rf Rg Figure 1: Non-inverting Amplifier Configuration Introduction The CLC425 is a very wide gain-bandwidth, ultra-low noise voltage feedback operational amplifier which enables application areas such as medical diagnostic ultrasound, magnetic tape & disk storage and fiber-optics to achieve maximum high-frequency signal-to-noise ratios. The set of characteristic plots located in the "Typical Performance" section illustrates many of the performance trade-offs. The following discussion will enable the proper selection of external components in order to achieve optimum device performance. en Rseq 4kTRf @ 25 C Figure 3: Non-inverting Amplifer Noise Model eni = ( en2 + in + Rs eq ) 2 + 4 kTRs eq ( ( + in - R f || Rg )) 2 ( + 4 kT R f || Rg ) Equation 1: General Noise Equation Rf||Rg = Rseq for bias current cancellation. Figure 4 illustrates the equivalent noise model using this assumption. Figure 5 is a plot of eni against equivalent source resistance (Rseq) with all of the contributing voltage noise sources of Equation 2 shown. This plot gives the expected eni for a given Rseq which assumes Rf||Rg = Rseq for bias current cancellation. The total equivalent output voltage noise (eno) is eniAv. 4kT2Rseq en 6.8F Av 2Rseq 7 0.1F CLC425 Rb Rf 4kTRg 4 kT = 16.4e - 21 Joules As seen in Figure 2, bias current cancellation is accomplished for the inverting configuration by placing a resistor (Rb) on the non-inverting input equal in value to the resistance seen by the inverting input (Rf||(Rg+Rs)). Rb is recommended to be no less than 25 for best CLC425 performance. The additional noise contribution of Rb can be minimized through the use of a shunt capacitor. 3 Rg in- Bias Current Cancellation In order to cancel the bias current errors of the noninverting configuration, the parallel combination of the gain-setting (Rg) and feedback (Rf) resistors should equal the equivalent source resistance (Rseq) as defined in Figure 1. Combining this constraint with the non-inverting gain equation also seen in Figure 1, allows both Rf and Rg to be determined explicitly from the following equations: Rf=AvRseq and Rg=Rf/(Av-1). When driven from a 0 source, such as that from the output of an op amp, the non-inverting input of the CLC425 should be isolated with at least a 25 series resistor. +Vcc CLC425 in+ 4kTRseq 2 in 2 Vout 6 6.8F 4 Figure 4: Noise Model with Rf||Rg = Rseq Vin Rs -Vcc Rg 0.1F Rf eni = Vs Av = - Rf Rg Figure 2: Inverting Amplifier Configuration ( en2 + 2 in Rseq ) 2 ( + 4 kT 2 Rseq ) Equation 2: Noise Equation with Rf||Rg = Rseq 5 http://www.national.com As seen in Figure 5, eni is dominated by the intrinsic voltage noise (en) of the amplifier for equivalent source resistances below 33.5. Between 33.5 and 6.43k, eni is dominated by the thermal noise ( e t = 4kTR seq ) of the external resistors. Above 6.43k, eni is dominated by the amplifier's current noise ( 2inRseq ). The point at which the CLC425's voltage noise and current noise contribute equally occurs for Rseq=464 (i.e. en / 2in ). As an example, configured with a gain of +20V/V giving a -3dB of 90MHz and driven from an Rseq=25, the CLC425 produces a total equivalent input noise voltage ( eni 1.5790MHz ) of 16.5Vrms. The noise figure is related to the equivalent source resistance (Rseq) and the parallel combination of Rf and Rg. To minimize noise figure, the following steps are recommended: * Minimize Rf||Rg * Choose the optimum Rs (ROPT) ROPT is the point at which the NF curve reaches a minimum and is approximated by: ROPT (en/in) Figure 6 is a plot of NF vs Rs with Rf||Rg = 9.09 (Av = +10). The NF curves for both Unterminated and Terminated systems are shown. The Terminated curve assumes Rs = RT. The table indicates the NF for various source resistances including Rs = ROPT. Figure 5: Voltage Noise Density vs. Source Resistance If bias current cancellation is not a requirement, then Rf||Rg does not need to equal Rseq. In this case, according to Equation 1, Rf||Rg should be as low as possible in order to minimize noise. Results similar to Equation 1 are obtained for the inverting configuration of Figure 2 if Rseq is replaced by Rb and Rg is replaced by Rg+Rs. With these substitutions, Equation 1 will yield an eni refered to the non-inverting input. Refering eni to the inverting input is easily accomplished by multiplying eni by the ratio of non-inverting to inverting gains. Figure 6: Noise Figure vs Source Resistance Supply Current Adjustment The CLC425's supply current can be externally adjusted downward from its nominal value by adding an optional resistor (Rp) between pin 8 and the negative supply as shown in Figure 7. Several of the plots found within the plot pages demonstrate the CLC425's behavior at different supply currents. The plot labeled "Icc vs. Rp" provides the means for selecting Rp and shows the result of standard IC process variation which is bounded by the 25C curve. Noise Figure Noise Figure (NF) is a measure of the noise degradation caused by an amplifier. +Vcc eni 2 S / Ni NF = 10LOG i = 10LOG 2 So / N o et 3 2 ) ( 2 2 e + in 2 Rseq + R f | | Rg + 4kTRseq + 4kT R f | | Rg n NF = 10LOG 4kTRseq 4 Vout -Vcc Figure 7: External Supply Current Adjustment Non-Inverting Gains Less Than 10V/V Using the CLC425 at lower non-inverting gains requires external compensation such as the shunt compensation as shown in Figure 8. The quiescent supply current must also be reduced to 5mA with Rp for stability. The compensation capacitors are chosen to reduce frequency response peaking to less than 1dB. The plot in the "Typical Performance" section labeled "Differential Gain and Phase" shows the video performance of the CLC425 with this compensation circuitry. ) Rseq = Rs for Unterminated Systems Rseq = Rs II RT for Terminated Systems Equation 3: Noise Figure Equation http://www.national.com 6 8 Rp The Noise Figure formula is shown in Equation 3. The addition of a terminating resistor RT, reduces the external thermal noise but increases the resulting NF. The NF is increased because RT reduces the input signal amplitude thus reducing the input SNR. ( 7 CLC425 6 Cf Icc=5mA Rs = 75 Cin 75 Rin 75 39pF +Vcc Rf CLC425 75 Rf = 124 Rg = 124 CLC425 Cf = 10pF Av = - I in R f Rb Figure 8: External Shunt Compensation Figure 11: Transimpedance Amplifier Configuration Inverting Gains Less Than 10V/V The lag compensation of Figure 9 will achieve stability for lower gains. Placing the network between the two input terminals does not affect the closed-loop nor noise gain, but is best used for the invering configuration because of its affect on the non-inverting input impedance. Vin Rg Rf Vout R CLC425 Rout C RL Figure 12: Transimpedance Amplifier Frequency Response Rb Figure 9: External Lag Compensation Single-Supply Operation The CLC425 can be operated with single power supply as shown iin Figure 10. Both the input and output are capacitively coupled to set the dc operating point. Vcc R Vcc 2 Vcc Vout = Vcc + AvVac 2 Vac C CLC425 R C Rout RL Figure 13: Current Noise Density vs. Feedback Resistance Rf Rg en 4 kT + + R R f f 2 C i ni = Figure 10: Single Supply Operation Low Noise Transimpedance Amplifier The circuit of Figure 11 implements a low-noise transimpedance amplifier commonly used with photo-diodes. The transimpedance gain is set by Rf. The simulated frequency response is shown in Figure 12 and shows the influence Cf has over gain flatness. Equation 4 provides the total input current noise density (ini) equation for the basic transimpedance configuration and is plotted against feedback resistance (Rf) showing all contributing noise sources in Figure 13. This plot indicates the expected total equivalent input current noise density (ini) for a given feedback resistance (Rf). The total equivalent output voltage noise density (eno) is iniRf. 2 in Equation 4: Total Equivalent Input Refered Current Very Low Noise Figure Amplifier The circuit of Figure 14 implements a very low Noise Figure amplifier using a step-up transformer combined with a CLC425 and a CLC404. The circuit is configured with a gain of 35.6dB. The circuit achieves measured Noise Figures of less than 2.5dB in the 10-40MHz region. 3rd order intercepts exceed +30dBm for frequencies less than 40MHz and gain flatness of 0.5dB is measured in the 1-50MHz pass bands. Application Note OA-14 provides greater detail on these low Noise Figure techniques. 7 http://www.national.com 40k Vin R = 681 Vo Pi 50 600 Av=+10 10 CLC425 R1 = 45.3 200 1:4 CLC425 806 50 0.1F 180 20 Mini-Circuits T16-6T C1 = 2200pF Po CLC404 1pF 50k Av=-3 20 50 Rg = 50 Rf = 1k C = 470pF Ko = 1 + R2 = 200 L = 0.1H Gain = Po = 35.6dB Pi Rf Rg sC R + 1 Rf sLRg Vo 1 1 = Ko - 2 Vin sC1 ( R1 + R) + 1 R f + Rg s LCR2 Rg + sL R2 + Rg + R2 Rg Figure 14: Very Low Noise Figure Amplifier ( Low Noise Integrator The CLC425 implements a deBoo integrator shown in Figure 15. Integration linearity is maintained through positive feedback. The CLC425's low input offset voltage and matched inputs allowing bias current cancellation provide for very precise integration. Stability is maintained through the constraint on the circuit elements. Rf Ko Vo Vin ; Ko = 1 + sRa C Rg ) Figure 17: Low Noise Magnetic Media Equalizer Rb Ra Vo Vin C CLC425 R 50 50 Figure 18: Equalizer Frequency Response Rf Low-Noise Phase-Locked Loop Filter The CLC425 is extremely useful as a Phase-Locked Loop filter in such applications as frequency synthesizers and data synchronizers. The circuit of Figure 19 implements one possible PLL filter with the CLC425. Rg Rf Rb , R >> Ra Ra || R Rg Rf Figure 15: Low Noise Integrator Vin Figure 19: Phased-Locked Loop Filter Decreasing the Input Noise Voltage The input noise voltage of the CLC425 can be reduced from its already low 1.05nV/Hz by slightly increasing the supply current. Using a 50k resistor to ground on pin 8, as shown in the circuit of Figure 14, will increase the quiescent current to 17mA and reduce the input noise voltage to < 0.95nV/Hz. R2 CLC425 Rf Rg Printed Circuit Board Layout Generally, a good high-frequency layout will keep power supply and ground traces away from the inverting input and output pins. Parasitic capacitances on these nodes to ground will cause frequency response peaking and possible circuit oscillation, see OA-15 for more information. National suggests the CLC730013-DIP, CLC730027-SOIC, or CLC730068-SOT evaluation board as a guide for high-frequency layout and as an aid in device testing and characterization. Figure 16: Sallen-Key Active Filter Topology Low Noise Magnetic Media Equalizer The CLC425 implements a high-performance low-noise equalizer for such applications as magnetic tape channels as shown in Figure 17. The circuit combines an integrator with a bandpass filter to produce the lownoise equalization. The circuit's simulated frequency response is illustrated in Figure 18. http://www.national.com CLC425 Rb C1 C2 Vout Rg High-Gain Sallen-Key Active Filters The CLC425 is well suited for high-gain Sallen-Key type of active filters. Figure 16 shows the 2nd order Sallen-Key low pass filter topology. Using component predistortion methods as discussed in OA-21 enables the proper selection of components for these high-frequency filters. R1 Cf 8 CLC425 Ultra Low Noise Wideband Op Amp Customer Design Applications Support National Semiconductor is committed to design excellence. For sales, literature and technical support, call the National Semiconductor Customer Response Group at 1-800-272-9959 or fax 1-800-737-7018. Life Support Policy National's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of National Semiconductor Corporation. As used herein: 1. Life support devices or systems are devices or systems which, a) are intended for surgical implant into the body, or b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Corporation National Semiconductor Europe National Semiconductor Hong Kong Ltd. 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