Equivalent circuit 2SD2641 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Unit V ICBO VCB=110V 100max A VCEO 110 V IEBO VEB=5V 100max A VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 60(Tc=25C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 C fT VCE=12V, IE=-2A 60typ MHz -55 to +150 C COB VCB=10V, f=1MHz 55typ pF Tstg 15.60.4 9.6 1.8 Ratings a 4.80.2 5.00.2 110 E External Dimensions MT-100(TO3P) (Ta=25C) Conditions Symbol 2.0 VCBO Electrical Characteristics 4.0 Unit 19.90.3 Ratings Symbol 2.00.1 o3.20.1 b V 2 4.0max Absolute maximum ratings (Ta=25C) (7 0 ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington C B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.450.1 Typical Switching Characteristics (Common Emitter) VCC (V) RL () IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (s) tstg (s) tf (s) 30 6 5 10 -5 5 -5 0.8typ 6.2typ 1.1typ C 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) - I B Characteristics (Typical) I C - V BE Temperature Characteristics (Typical) I B =0.1mA 0 2 0 4 I C =3A 0 6 0.1 0.5 Collector-Emitter Voltage V C E (V) 1 5 10 50 h FE - I C Temperature Characteristics (Typical) (V C E =4V) Typ 1000 500 0.5 1 125C Transient Thermal Resistance DC C urrent G ain h FE 50000 5000 10000 25C 5000 -30C 1000 500 100 0.01 56 0.1 Collector Current I C (A) p) em eT as (C ) Temp 1 0.5 2 2.5 1 j-a - t Characteristics 5 1 0.5 1 56 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T - I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c - T a Derating (V C E =12V) 80 60 20 Typ Collector Curre nt I C (A) nk 160 -6 si -1 Emitter Current I E (A) at -0.1 he 0 -0.02 ite 0.1 fin Without Heatsink Natural Cooling 40 In 0.5 ith s 1 W 0m s 20 C 10 40 D m 5 60 Maximu m Power Dissipa tion P C (W) 10 10 Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h F E 50000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 0.01 0 100 Base Current I B (mA) h FE - I C Characteristics (Typical) 10000 2 (Case 1 -30C 2 I C =5A 4 ) 0.2mA 2 Temp 4 5C Collector Current I C (A) 0.3 mA (V CE =4V) 6 3 12 0. 4m A (Case A 25C 5m Collector Current I C (A) 0. j - a (C /W) 5mA 6 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 1m A I C - V CE Characteristics (Typical) 5.450.1 B 20 Without Heatsink 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(C) 150