1994. 5. 20 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC1020
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌExcellecnt hFE Linearity
: hFE(2)=25Min. : VCE=6V, IC=400mA.
ᴌ1 Watt Amplifier Application.
ᴌComplementary to KTA1021.
MAXIMUM RATINGS (Ta=25ᴱ)
123
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. EMITTER
2. COLLECTOR
3. BASE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
EE
L
N
M
C
H
0.80
O 0.75
O
B
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 35 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC500 mA
Emitter Current IE-500 mA
Collector Power Dissipation PC400 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 ỌA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 ỌA
DC Current Gain
hFE(1) VCE=1V, IC=100mA 100 - 240
hFE(2) VCE=6V, IC=400mA 25 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Voltage VBE VCE=1V, IC=100mA - 0.8 1.0 V
Transition Frequency fTVCB=6V, IC=20mA -300 -MHz
Collector Output Capacitance Cob VCB=6V, IE=0, f=1MHz - 7.0 - pF