July, 2007 FGA25N120ANTD/FGA25N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description * NPT Trench Technology, Positive temperature coefficient * Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25C Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. * Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25C This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. * Extremely enhanced avalanche capability C G TO-3PN G C E E Absolute Maximum Ratings Symbol Description VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage IC Collector Current ICM Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current PD Maximum Power Dissipation Maximum Power Dissipation FGA25N120ANTD Units 1200 V 20 V 50 A @ TC = 25C @ TC = 100C Collector Current (Note 1) @ TC = 100C 25 A 90 A 25 A 150 A @ TC = 25C 312 W @ TC = 100C 125 W TJ Operating Junction Temperature -55 to +150 C Tstg Storage Temperature Range -55 to +150 C TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds 300 C Thermal Characteristics Symbol Parameter Typ. Max. Units RJC Thermal Resistance, Junction-to-Case for IGBT -- 0.4 C/W RJC Thermal Resistance, Junction-to-Case for Diode -- 2.0 C/W RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W (c)2007 Fairchild Semiconductor Corporation FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 1 www.fairchildsemi.com FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT u Device Marking Device Package Reel Size Tape Width Quantity FGA25N120ANTD FGA25N120ANTD TO-3P -- -- 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 3 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- 250 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 25mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 25A, 3.5 5.5 7.5 V VGE = 15V -- 2.0 2.5 V IC = 25A, VGE = 15V, TC = 125C -- 2.15 -- V IC = 50A, -- 2.65 -- V -- 3700 -- pF -- 130 -- pF -- 80 -- pF VGE = 15V Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss td(on) Turn-On Delay Time VCC = 600 V, IC = 25A, RG = 10, VGE = 15V, Inductive Load, TC = 25C VCC = 600 V, IC = 25A, RG = 10, VGE = 15V, Inductive Load, TC = 125C -- 50 -- ns -- 60 90 ns -- 190 -- ns -- 100 180 ns -- 4.1 6.2 mJ -- 0.96 1.5 mJ -- 5.06 7.7 mJ -- 50 -- ns -- 60 -- ns -- 200 -- ns tr Rise Time td(off) Turn-Off Delay Time tf Fall Time -- 154 -- ns Eon Turn-On Switching Loss -- 4.3 6.9 mJ Eoff Turn-Off Switching Loss -- 1.5 2.4 mJ Ets Total Switching Loss -- 5.8 9.3 mJ Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCE = 600 V, IC = 25A, VGE = 15V -- 200 300 nC -- 15 23 nC -- 100 150 nC Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature 2 FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 www.fairchildsemi.com FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Package Marking and Ordering Information C Symbol VFM trr Irr Qrr = 25C unless otherwise noted Parameter Diode Forward Voltage Diode Reverse Recovery Time Test Conditions IF = 25A IF = 25A dI/dt = 200 A/s Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge 3 FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 Min. Typ. Max. Units TC = 25C -- 2.0 3.0 V TC = 125C -- 2.1 -- TC = 25C -- 235 350 TC = 125C -- 300 -- TC = 25C -- 27 40 TC = 125C -- 31 -- TC = 25C -- 3130 4700 TC = 125C -- 4650 -- ns A nC www.fairchildsemi.com FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Electrical Characteristics of DIODE T Figure 1. Typical Output Characteristics 180 TC = 25C 20V Figure 2. Typical Saturation Voltage Characteristics 120 15V 12V Common Emitter VGE = 15V 17V 160 10V 100 TC = 25C Collector Current, IC [A] Collector Current, IC [A] 140 120 9V 100 80 8V 60 40 TC = 125C 80 60 40 20 7V 20 VGE = 6V 0 0 0 2 4 6 8 10 0 Collector-Emitter Voltage, VCE [V] 3 4 5 Figure 4. Saturation Voltage vs. VGE 3.0 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Common Emitter TC = -40C 2.5 40A IC = 25A 2.0 1.5 16 12 8 4 40A 25A IC = 12.5A 0 25 50 75 100 125 0 4 Case Temperature, TC [C] 12 16 20 Figure 6. Saturation Voltage vs. VGE 20 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25C 16 12 8 40A 25A 4 8 Gate-Emitter Voltage, VGE [V] Figure 5. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] 2 Collector-Emitter Voltage, VCE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 1 IC = 12.5A 0 Common Emitter TC = 125C 16 12 8 40A 25A 4 IC = 12.5A 0 0 4 8 12 16 20 0 Gate-Emitter Voltage, VGE [V] 8 12 16 20 Gate-Emitter Voltage, VGE [V] 4 FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 4 www.fairchildsemi.com FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Typical Performance Characteristics (Continued) Figure 7. Capacitance Characteristics Figure 8. Turn-On Characteristics vs. Gate Resistance 5000 4500 Common Emitter VGE = 0V, f = 1MHz Ciss TC = 25C 4000 100 Switching Time [ns] Capacitance [pF] 3500 3000 2500 2000 1500 tr td(on) Common Emitter VCC = 600V, VGE = 15V 1000 IC = 25A Coss TC = 25C 500 TC = 125C Crss 0 10 1 10 0 10 20 30 40 50 60 70 Gate Resistance, RG [ ] Collector-Emitter Voltage, VCE [V] Figure 9. Turn-Off Characteristics vs. Gate Resistance Figure 10. Switching Loss vs. Gate Resistance 1000 Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25C 10 TC = 125C Switching Loss [mJ] Switching Time [ns] td(off) 100 tf Common Emitter VCC = 600V, VGE = 15V IC = 25A Eon Eoff 1 TC = 25C TC = 125C 10 0 10 20 30 40 50 60 0 70 10 Gate Resistance, RG [ ] 20 30 40 50 60 70 Gate Resistance, RG [ ] Figure 11. Turn-On Characteristics vs. Collector Current Figure 12. Turn-Off Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 10 TC = 25C td(off) tr Switching Time [ns] Switching Time [ns] TC = 125C 100 td(on) 100 tf Common Emitter VGE = 15V, RG = 10 TC = 25C TC = 125C 10 20 30 40 50 10 Collector Current, IC [A] 30 40 50 Collector Current, IC [A] 5 FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 20 www.fairchildsemi.com FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics 16 Common Emitter VGE = 15V, RG = 10 Gate-Emitter Voltage, VGE [V] 10 TC = 125C Switching Loss [mJ] Common Emitter RL = 24 14 Eon TC = 25C Eoff 1 0.1 TC = 25C 12 600V Vcc = 200V 400V 10 8 6 4 2 0 10 20 30 40 50 0 20 40 Figure 15. SOA Characteristics 80 100 120 140 160 180 200 Figure 16. Turn-Off SOA 100 Ic MAX (Pulsed) 100 60 Gate Charge, Qg [nC] Collector Current, IC [A] 50 s Ic MAX (Continuous) Collector Current, IC [A] Collector Current, Ic [A] 100s 10 1ms DC Operation 1 Single Nonrepetitive Pulse T C = 25 C 0.1 10 Curves must be derated linearly with increase in temperature Safe Operating Area V GE = 15V, TC = 125 C 0.01 1 0.1 1 10 100 1000 1 Collector - Emitter Voltage, VCE [V] 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 17. Transient Thermal Impedance of IGBT 0 1 1 1 ] c j h t Z [ e s n o p s e R l a m r e h T 0.5 . 0 0.2 0.1 Pdm 0.05 1 0 . 0 t1 0.02 t2 0.01 single pulse 0 1 1 1 . 0 1 0 . 0 3 E 1 4 E 1 5 E 31 E 1 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC ] c e s [ n o i t a r u D e s l u P r a l u g n a t c e R 6 FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 www.fairchildsemi.com FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Typical Performance Characteristics (Continued) Figure 18. Forward Characteristics Figure 19. Reverse Recovery Current 30 Reverse Recovery Currnet , Irr [A] Forward Current , IF [A] 50 10 TJ = 125C 1 TJ = 25C TC = 125C TC = 25C 0.4 0.8 1.2 1.6 20 15 di/dt = 100A/s 10 5 0 0.1 0.0 di/dt = 200A/s 25 5 2.0 Figure 20. Stored Charge 15 20 25 Figure 21. Reverse Recovery Time 4000 300 Reverse Recovery Time , trr [ns] Stored Recovery Charge , Qrr [nC] 10 Forward Current , IF [A] Forward Voltage , VF [V] 3000 di/dt = 200A/s 2000 di/dt = 100A/s 1000 di/dt = 100A/s 200 di/dt = 200A/s 100 0 0 5 10 15 20 5 25 Forward Current , IF [A] 7 FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 10 15 20 25 Forward Current , IF [A] www.fairchildsemi.com FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Typical Performance Characteristics FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Mechanical Dimensions (continued) TO-3PN Dimensions in Millimeters 9 FGA25N120ANTD /FGA25N!20ANTD_F109 Rev. B2 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20