Data Sheet 1 of 11 Rev. 05.1, 2009-02-24
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Description
The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA212001E
Package H-36260-2
Thermally-Enhanced High Power RF LDMOS FETs
200 W, 2110 – 2170 MHz
2-Carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-53
-48
-43
-38
-33
-28
-23
34 36 38 40 42 44 46 48
Average Output Power (dBm)
IM3 (dBc), ACPR (dBc)
0
5
10
15
20
25
30
Drain Efficiency (%)
ACPR
Efficiency
IM3
PTFA212001F
Package H-37260-2
Features
•Thermally-enhanced packages, Pb-free and
RoHS compliant
•Broadband internal matching
•Typical two-carrier WCDMA performance at
2140 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35.5 dBc
- Adjacent channel power = –40 dBc
•Typical single-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
- Average output power = 70 W
- Linear Gain = 15.5 dB
- Efficiency = 34%
- Adjacent channel power = –37 dBc
•Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 220 W
- Efficiency = 54%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 5:1 VSWR @ 30 V,
200 W (CW) output power
*See Infineon distributor for future availability.
Data Sheet 2 of 11 Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average
ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 15.3 15.8 —dB
Drain Efficiency ηD26.5 28 —%
Intermodulation Distortion IMD —–35.5 –34 dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 200 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps —15.8 —dB
Drain Efficiency ηD—38.5 —%
Intermodulation Distortion IMD —–28 —dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 30 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.05 —Ω
Operating Gate Voltage VDS = 30 V, IDQ = 1.6 A VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Data Sheet 3 of 11 Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Broadband Performance
VDD = 30 V, IDQ = 1600 mA, POUT = 50.0 dBm
10
15
20
25
30
35
2050 2090 2130 2170 2210 2250
Frequency (MHz)
Gain (dB), Efficiency (%)
-35
-30
-25
-20
-15
-10
-5
Input Return Loss (dB)
Gain
Efficiency
Return Loss
Two-carrier WCDMA at Selected Biases
VDD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ
-55
-50
-45
-40
-35
-30
35 37 39 41 43 45 47
Average Output Power (dBm)
3rd Order IMD (dBc)
1.6 A
1.8 A
2.0 A 1.4 A
*See Infineon distributor for future availability.
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD625 W
Above 25°C derate by 3.57 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 200 W CW) RθJC 0.28 °C/W
Ordering Information
Type and Version Package Type Package Description Marking
PTFA212001E V4 H-36260-2 Thermally-enhanced slotted flange, single-ended PTFA212001E
PTFA212001F V4 H-37260-2 Thermally-enhanced earless flange, single-ended PTFA212001F
Typical Performance (data taken in a production test fixture)
Data Sheet 4 of 11 Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
2-Tone Drive-up at Optimum IDQ
VDD = 30 V, IDQ = 1600 mA,
ƒ = 2140 MHz, tone spacing = 1 MHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
0
5
10
15
20
25
30
35
40
45
50
Drain Efficiency (%)
IM5
Efficiency
IM7
IM3
Intermodulation Distortion (dBc)
Voltage Sweep
IDQ = 1600 mA, ƒ = 2140 MHz,
tone spacing = 1 MHz, POUT (PEP) = 53 dBm
-45
-40
-35
-30
-25
-20
-15
-10
23 25 27 29 31 33
Supply Voltage (V)
3rd Order IMD (dBc)
10
15
20
25
30
35
40
45
50
Gain
Efficiency
IM3 Up
Gain (dB), Drain Efficiency (%)
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1600 mA, ƒ = 2170 MHz
13
14
15
16
17
18
0 40 80 120 160 200 240
Output Power (W)
Gain (dB)
10
20
30
40
50
60
Drain Efficiency (%)
Gain
Efficiency
TCASE = 25°C
TCASE = 90°C
Single-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
-55
-50
-45
-40
-35
33 35 37 39 41 43 45 47 49
Average Output Power (dBm)
0
10
20
30
40
Drain Efficiency (%)
Adjacent Channel Power Ratio (dB)
Efficiency
ACPR
ACPR Up
ACPR Low
Typical Performance (cont.)
Data Sheet 5 of 11 Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Output Peak-to-average Ratio Compression
(PARC) at Various Power Levels
VDD = 30 V, IDQ = 1500 mA, ƒ = 2170 MHz,
single-carrier WCDMA input PAR = 7.5 dB
0.001
0.01
0.1
1
10
100
12345678
Peak-to-Average (dB)
Probability (%)
52 dBm
50.5 dBm
50 dBm
48 dBm
46 dBm
Power Gain vs. Power Sweep (CW)
over Temperature
VDD = 30 V, IDQ = 1500 mA, ƒ = 2170 MHz
12
13
14
15
16
17
1 10 100 1000
Output Power (W)
Power Gain (dB)
–15°C
25°C
85°C
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 30 V IDQ = 1600 mA, ƒ = 2140 MHz,
POUT = 53 dBm PEP
-55
-50
-45
-40
-35
-30
-25
-20
-15
010 20 30 40
Tone Spacing (MHz)
Intermodulation Distortion (dBc)
3rd order
5th
7th
Typical Performance (cont.)
Data Sheet 6 of 11 Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
2080 18.2 4.1 1.1 2.5
2110 19.0 3.2 1.0 2.8
2140 19.8 2.3 1.0 3.0
2170 20.4 1.0 1.0 3.2
2200 20.8 –0.6 1.0 3.5
0.1
0.3
0.5
0.2
0.4
0.1
-
W
AV
E
LE
N
GT
H
ST
O
W
AR
D
G
E
N
E
O
W
AR
D
L
OA
D
-
0
.0
Z Load
Z Source
2200 MHz
2080 MHz
2080 MHz
2200 MHz
Z0 = 50 Ω
Broadband Circuit Impedance
See next page for circuit information
Data Sheet 7 of 11 Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
a2 1 20 0 1 e f_sch
RF_OUT
RF_IN
C3
0.001µF
C2
0.001µF
Q1
BCP56
R2
1.3K V
QQ1
LM7805
0.001µF
VDD
R1
1.2K V
R3
2K V
R8
2K V
R5
2K V
l8
DUT
C4
4.7µF
16V
C5
0.1µF
R6
5.1K V
C6
7.5pF
C8
0.2pF
l2l3l4l7l5
l9
C10
4.7µF
16V
C11
0.1µF
C12
7.5pF
R7
5.1K V
C9
0.9pF
l6l1
C7
8.2pF C26
0.4pF
C25
0.4pF C29
8.2pF
C19
8.2pF
C21
1µF
C20
2.2µF
C24
10µF
50V
C23
0.1µF
L2
C28
0.5pF
C27
0.5pF
C13
8.2pF
C15
1µF
C14
2.2µF
C18
10µF
50V
C17
0.1µF
l12 l13 l14 l15 l16 l17
l10
l11
VDD
L1
C1
C16
1µF
C22
1µF
Reference Circuit
Reference circuit schematic for ƒ = 2140 MHz
Circuit Assembly Information
DUT PTFA212001E or PTFA212001F LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers RO4350 1 oz. copper
Microstrip Electrical Characteristics at 2140 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.042 λ, 50.0 Ω3.56 x 1.68 0.140 x 0.066
l20.048 λ, 50.0 Ω4.11 x 1.68 0.162 x 0.066
l30.026 λ, 50.0 Ω2.08 x 1.68 0.082 x 0.066
l40.059 λ, 50.0 Ω5.03 x 1.68 0.198 x 0.066
l5 (taper) 0.062 λ, 50.0 Ω / 6.9 Ω5.00 x 1.68 / 20.32 0.197 x 0.066 / 0.800
l60.015 λ, 6.9 Ω1.14 x 20.32 0.045 x 0.800
l70.028 λ, 6.9 Ω2.16 x 20.32 0.085 x 0.800
l8, l90.136 λ, 60.0 Ω11.63 x 1.27 0.458 x 0.050
l10, l11 0.254 λ, 51.2 Ω21.51 x 1.65 0.847 x 0.065
l12 0.071 λ, 5.0 Ω5.49 x 28.83 0.216 x 1.135
l13 (taper) 0.019 λ, 5.0 Ω / 6.8 Ω1.52 x 28.83 / 20.62 0.060 x 1.135 / 0.812
l14 (taper) 0.026 λ, 6.8 Ω / 13.5 Ω2.11 x 20.62 / 9.65 0.083 x 0.812 / 0.380
l15 (taper) 0.026 λ, 13.5 Ω / 40.9 Ω2.06 x 9.65 / 2.34 0.081 x 0.380 / 0.092
l16 0.029 λ, 40.9 Ω2.77 x 2.34 0.109 x 0.092
l17 0.107 λ, 50.0 Ω9.04 x 1.68 0.356 x 0.066
1Electrical characteristics are rounded.
Data Sheet 8 of 11 Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Reference circuit assembly diagram* (not to scale)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4, C10 Capacitor, 4.7 µF, 16 VDigi-Key PCS3475CT-ND
C5, C11, C17, C23 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6, C12 Ceramic capacitor, 7.5 pF ATC 100B 7R5
C7, C13, C19, C29 Ceramic capacitor, 8.2 pF ATC 100B 8R2
C8 Ceramic capacitor, 0.2 pF ATC 600S 0R2 BT
C9 Ceramic capacitor, 0.9 pF ATC 600A 0R9 BT
C14, C20 Capacitor, 2.2 µF Digi-Key 445-1474-2-ND
C15, C16, C21, C22 Ceramic capacitor, 1 µF Digi-Key 445-1411-2-ND
C18, C24 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C25, C26 Ceramic capacitor, 0.4 pF ATC 100B 0R4
C27, C28 Ceramic capacitor, 0.5 pF ATC 100B 0R5
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3, R5 Chip resistor 2 k-ohms Digi-Key P2KECT-ND
R4 not used
R6, R7 Chip resistor 5.1 k-ohms Digi-Key P5.1KECT-ND
R8 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
* Gerber Files for this circuit available on request
R3
C5 R6
R5
C6
C11 C12
C10
C8
C9
C4
C7
R7
C25
C27
C28
C26
C17
C23
C29
C21
C19
C20
C13
C16
C14
R8
C1
C3
C2
R2
R1
A212001IN_01
RO4350_.030
A212001out_01
RO4350_.030
a212001ef_assy
RF_IN RF_OUT
L1
VDD
VDD
VDD
Q1
QQ1
L2
C24
C18
C15
C22
Data Sheet 9 of 11 Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36260-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
C
L
C
L
h-36+37260-2_36260 / 04-25-08
0.0381 [.0015] -A-
22.35±0.23
[.880±.009]
4.83±0.50
[.190±.020]
2X 12.70
[.500]
23.37±0.51
[.920±.020]
4X R 1.52
[R.060]
34.04
[1.340]
D
S
G
FLANGE 13.72
[.540]
45° X 2.03
[.080]
SPH 1.57
[.062]
2X R1.63
[R.064]
4.11±0.38
[.162±.015]
27.94
[1.100]
C
L
1.02
[.040]
+0.10
LID 13.21 –0.15
+.004
[.520 ]
–.006
Data Sheet 10 of 11 Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37260-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
+0.10
LID 13.21 –0.15
+.004
[.520 ]
–.006
C
L
C
L
h-36+37260-2_37260 / 04-25-08
SPH 1.57
[.062]
23.37±0.51
[.920±.020]
2X 12.70
[.500]
45° X 2.031
[.080]
D
G
S
-A-
4.11±0.38
[.162±.015]
LID 22.35±0.23
[.880±.009]
FLANGE 23.11
[.910]
13.72
[.540]
4.83±0.50
[.190±.020]
0.0381 [.0015]
+0.381
4X R0.508 –0.127
+.015
[R.020 ]
–.005
1.02
[.040]
Data Sheet 11 of 11 Rev. 05.1, 2009-02-24
PTFA212001E/F
Confidential, Limited Internal Distribution
Revision History: 2009-02-24 Data Sheet
Previous Version: 2007-12-05, Data Sheet (2006-06-12, Preliminary Data Sheet)
Page Subjects (major changes since last revision)
1, 2, 9, 10 Update product to V4, with new package technologies. Update package outline diagrams.
1, 2 Update gain specifications.
8Fixed typing error
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-24
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
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