Product Specification
PE42543
Page 4 of 14
Document No. DOC-12314-2 │ UltraCMOS® RFIC Solutions ©2013-2014 Peregrine Semiconductor Corp. All rights reserved.
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be
restricted to the limits in the Operating Ranges
table. Operation between operating range
maximum and absolute maximum for extended
periods may reduce reliability.
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS
devices are immune to latch-up.
Switching Frequency
The PE42543 has a maximum 25 kHz switching
rate when the internal negative voltage generator
is used (pin 29 = GND). Switching frequency
describes the time duration between switching
events. Switching time is the duration between
the point the control signal reaches 50% of the
final value and the point the output signal reaches
within 10% or 90% of its target value.
Table 5. Truth Table
State V1 V2
RF1 on 0 0
RF2 on 1 0
RF3 on 0 1
RF4 on 1 1
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the
PE42543 in the 29-lead 4 4 mm LGA package is
MSL3.
Optional External VSS Control (VSS_EXT)
For proper operation, the VSS_EXT control pin must
be grounded or tied to the VSS voltage specified in
Table 3. When the VSS_EXT control pin is
grounded, FETs in the switch are biased with an
internal negative voltage generator. For
applications that require the lowest possible spur
performance, VSS_EXT can be applied externally to
bypass the internal negative voltage generator.
Table 4. Absolute Maximum Ratings
Parameter/Condition Symbol Min Max Unit
Supply voltage VDD –0.3 5.5 V
Digital input voltage (V1, V2) VCTRL –0.3 3.6 V
RF input power, CW
(RFC–RFX)1
9 kHz–27.5 MHz
≥ 27.5 MHz–18 GHz
PMAX,ABS
Fig. 4
33
dBm
dBm
Storage temperature range TST –65 +150 °C
ESD voltage HBM,3 all pins VESD,HBM 2500 V
ESD voltage MM4, all pins VESD,MM 150 V
ESD voltage CDM5, all pins VESD,CDM 250 V
RF input power, pulsed
(RFC–RFX)2
9 kHz–27.5 MHz
≥ 27.5 MHz–18 GHz
PMAX,PULSED
Fig. 4
34
dBm
dBm
RF input power into
terminated ports, CW (RFX)1
9 kHz–18.8 MHz
≥ 18.8 MHz–18 GHz
PMAX,TERM
Fig. 4
22
dBm
dBm
Notes: 1. 100% duty cycle, all bands, 50Ω
2. Pulsed, 5% duty cycle of 4620 µs period, 50Ω
3. Human Body Model (MIL_STD 883 Method 3015)
4. Machine Model (JEDEC JESD22-A115)
5. Charged Device Model (JEDEC JESD22-C101)
Spurious Performance
The typical spurious performance of the PE42543
is –150 dBm when VSS_EXT = 0V (pin 29 = GND). If
further improvement is desired, the internal
negative voltage generator can be disabled by
setting VSS_EXT = –3.4V.
Hot-Switching Capability
The maximum hot switching capability of the
PE42543 is 20 dBm from 18.8 MHz to 18 GHz.
The maximum hot switching capability below
18.8 MHz does not exceed the maximum RF CW
terminated power, see Figure 4. Hot switching
occurs when RF power is applied while switching
between RF ports.