HF50-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI HF50-12S is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely suitable and capable of withstanding high VSRW under operating conditions. .112x45 A C B E E OC B FEATURES: * PG = 16 dB min. at 50 W/30 MHz * IMD3 = -30 dBc max. at 50 W (PEP) * OmnigoldTM Metalization System D H I J G #8-32 UNC-2A F E MAXIMUM RATINGS MINIMUM MAXIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 18 V C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 3.5 V E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 DIM IC 12.0 A VCBO 45 V VCEO VEBO PDISS 183 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C JC 1.05 C/W CHARACTERISTICS ORDER CODE: ASI10597 TC = 25 C NONETEST CONDITIONS SYMBOL .175 / 4.45 .750 / 19.05 J MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 45 V BVCES IC = 100 mA 40 V BVCEO IC = 50 mA 18 V BVEBO IE = 10 mA 3.5 V ICES VCE = 15 V hFE VCE = 5.0 V IC = 5.0 A 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without 10 mA --- --- REV. B 1/2 HF50-12S ERROR! REFERENCE SOURCE NOT FOUND. COB VCB = 12.5 V GP VCE = 12.5 V C POUT = 50 W (PEP) f = 1.0 MHz PIN = 5.0 W f = 30 MHz 300 dB 10 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without pF % REV. B 2/2