MAC16NG - ON Semiconductor

December, 2005 − Rev. 3 1Publication Order Number:

MAC16D/D

MAC16D, MAC16M, MAC16N

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed for high performance full-wave ac control applications

where high noise immunity and high commutating di/dt are required.

Features

•Blocking Voltage to 800 Volts

•On-State Current Rating of 16 Amperes RMS at 80°C

•Uniform Gate Trigger Currents in Three Quadrants

•High Immunity to dv/dt − 500 V/ms minimum at 125°C

•Minimizes Snubber Networks for Protection

•Industry Standard TO-220AB Package

•High Commutating di/dt − 9.0 A/ms minimum at 125°C

•Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetit iv e Off−State Voltage (Note 1)

(TJ = −40 to 125°C, Sine Wave,

50 to 60 Hz, Gate Open) MAC16D

MAC16M

MAC16N

VDRM,

VRRM

400

600

800

On-State RMS Current

(Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT(RMS) 16 A

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

TJ = 125°C)

ITSM 150 A

Circuit Fusing Consideration (t = 8.3 ms) I2t 93 A2sec

Peak Gate Power

(Pulse Width ≤1.0 ms, TC = 80°C) PGM 20 W

Average Gate Power

(t = 8.3 ms, TC = 80°C) PG(AV) 0.5 W

Operating Junction Temperature Range TJ−40 to +125 °C

Storage Temperature Range Tstg −40 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TRIACS

16 AMPERES RMS

400 thru 800 VOLTS

TO−220AB

CASE 221A−09

STYLE 4

http://onsemi.com

MAC16xG

AYWW

MARKING

DIAGRAM

x = D, M, or N

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

Device Package Shipping

ORDERING INFORMATION

MAC16D TO−220AB 50 Units / Rail

MAC16N TO−220AB 50 Units / Rail

MAC16DG TO−220AB

(Pb−Free) 50 Units / Rail

MAC16NG TO−220AB

(Pb−Free) 50 Units / Rail

PIN ASSIGNMENT

3 Gate

Main Terminal 1

Main Terminal 2

4Main Terminal 2

MT1

MT2

Preferred devices are recommended choices for future use

and best overall value.

MAC16M TO−220AB 50 Units / Rail

MAC16MG TO−220AB

(Pb−Free) 50 Units / Rail

MAC16D, MAC16M, MAC16N

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction−to−Case

Junction−to−Ambient RqJC

RqJA

2.0

62.5 °C/W

Maximum Lead Temperature for Soldering Purpos es 1/ 8 ″ from Cas e for 10 Seconds TL260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C

TJ = 125°C

IDRM,

IRRM −

−−

−0.01

2.0

ON CHARACTERISTICS

Peak On-State Voltage (Note 2)

(ITM = ±21 A Peak) VTM − 1.2 1.6 V

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IGT 10

Holding Current

(VD = 12 V, Gate Open, Initiating Current = ±150 mA) IH− 20 50 mA

Latching Current (VD = 24 V, IG = 50 mA)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IL−

−

Gate Trigger Voltage (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VGT 0.5

0.5

0.75

0.72

0.82

1.5

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current, See Figure 10.

(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/ms,

Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) CL = 10 mF

LL = 40 mH

(di/dt)c9.0 − − A/ms

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform,

Gate Open, TJ = 125°C)

dv/dt 500 − − V/ms

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

MAC16D, MAC16M, MAC16N

http://onsemi.com

+ Current

+ Voltage

VTM

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

Voltage Current Characteristic of Triacs

(Bidirectional Device)

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1

MainTerminal 2 +

Quadrant 3

MainTerminal 2 − VTM

VTM Maximum On State Voltage

IHHolding Current

MT1

(+) IGT

GATE

(+) MT2

REF

MT1

(−) IGT

GATE

(+) MT2

REF

MT1

(+) IGT

GATE

(−) MT2

REF

MT1

(−) IGT

GATE

(−) MT2

REF

−

MT2 NEGATIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

Quadrant III Quadrant IV

Quadrant II Quadrant I

Quadrant Definitions for a Triac

IGT −+ IGT

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

MAC16D, MAC16M, MAC16N

http://onsemi.com

Figure 1. RMS Current Derating

IT(RMS), RMS ON-STATE CURRENT (AMP)

125

120

115

110

105

100

80 1614121086420

TC, CASE TEMPERATURE ( C)°

Figure 2. On-State Power Dissipation

IT(RMS), ON-STATE CURRENT (AMP)

1614121086420

PAV, AVERAGE POWER (WATTS)

α = 30 and 60°

α = 90°

α = 120°α = 180°

DC 180°

120°

90°

60°

α = 30°

Figure 3. On-State Characteristics

VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

100

IT, INSTANTANEOUS ON-STATE CURRENT (AMP)

0.5 1 1.5 2 2.5 3 3.5 4

0.1

MAXIMUM @ TJ = 125°C

TYPICAL AT

TJ = 25°C

MAXIMUM @ TJ = 25°C

Figure 4. Thermal Response

t, TIME (ms)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.1

0.01 1·10 4

10001001010.1

Figure 5. Hold Current Variation

TJ, JUNCTION TEMPERATURE (°C)

−40

IH, HOLD CURRENT (mA)

5−10 20 50 80 110 125

MT2 POSITIVE

MT2 NEGATIVE

MAC16D, MAC16M, MAC16N

http://onsemi.com

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Trigger Current Variation

TJ, JUNCTION TEMPERATURE (°C)

IGT, GATE TRIGGER CURRENT (mA)

VGT, GATE TRIGGER VOLTAGE (VOLT)

−40 −10 20 50 80 110 125

100

VD = 12 V

RL = 100 W

0.5

−40 −10 +20 50 80 110 125

VD = 12 V

RL = 100 W

Figure 7. Gate Trigger Voltage Variation

Figure 8. Critical Rate of Rise of Off-State Voltage

(Exponential Waveform)

RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)

5000

010000100010010

dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE

Figure 9. Critical Rate of Rise of

Commutating Voltage

(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

(V/ s)μ

VD = 800 Vpk

TJ = 125°C

ITM

VDRM

(di/dt)c = 6f ITM

1000

f = 1

2 tw

TJ = 125°C100°C75°C

100

(dv/dt) , CRITICAL RATE OF RISE OF

(V/ s)μ

COMMUTATING VOLTAGE

20 30 40 50 60 70 80 90 100

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)

LL1N4007

200 V

MEASURE

−

CHARGE

CONTROL

CHARGE TRIGGER

NON-POLAR

51 W

MT2

MT1

1N914

TRIGGER CONTROL

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

MAC16D, MAC16M, MAC16N

http://onsemi.com

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 −−− 1.15 −−−

Z−−− 0.080 −−− 2.04

123

SEATING

PLANE

−T−

TO−220AB

CASE 221A−09

ISSUE AA

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its of ficers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

MAC16D/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your

local Sales Representative.