Preliminary Product Description SGA-3286 Stanford Microdevices' SGA-3286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 65 GHz. DC-3600 MHz Silicon Germanium HBT Cascadeable Gain Block This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-3286 requires only DC blocking and bypass capacitors for external components. Product Features * DC-3600 MHz Operation * Single Voltage Supply * High Output Intercept: +25.5dBm typ. at Small Signal Gain vs. Frequency 24 850 MHz * Low Current Draw: 35mA at 2.7V typ. * Low Noise Figure: 3.7dB typ. at 850 MHz 18 dB 12 Frequency MHz Symbol 5000 3500 2400 1900 900 500 0 100 6 Applications * Oscillator Amplifiers * Cordless Phones * IF/ RF Buffer Amplifier * Drivers for CATV Amplifiers Parameters: Test Conditions: Z0 = 50 Ohms, Id = 35 mA, T = 25C Units Min. dB m dB m Typ. P 1dB Output Power at 1dB Compression f = 850 MHz f = 1950 MHz S 21 Small Signal Gain f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 3600 MHz dB dB dB S 12 Reverse Isolation f = DC - 3600 MHz dB 18.9 S11 Input VSWR f = DC-2000 MHz f = 2000 - 3600 MHz - 1.30:1 1.67:1 S 22 Output VSWR f = DC-3600 MHz IP3 Third Order Intercept Point f = 850 MHz f = 1950 MHz NF Noise Figure TD Group Delay VD Device Voltage 12.2 11.3 13.0 14.3 12.9 10.0 - 1.17:1 dB m dB m 25.5 24.8 f = DC - 1000 MHz f = 1000 - 2400 MHz dB dB 3.7 4.3 f = 1000 MHz pS 119.0 V Max. 2.4 2.7 3.0 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100631 Rev A Preliminary Preliminary SGA-3286 DC-3600 MHz 2.7V SiGe Amplifier Specification Parameter Device Bias Operating Voltage Operating Current 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation Min Typ. Test Max. Unit Condition T= 25C 2.7 35.0 V mA 14.6 3.7 25.1 11.8 22.0 18.4 dB dB dB m dB m dB dB 14.3 3.7 25.5 12.2 18.9 18.5 dB dB dB m dB m dB dB 12.9 4.2 24.8 11.3 18.4 18.9 dB dB dB m dB m dB dB 12.2 4.3 24.5 10.9 17.8 19.0 dB dB dB m dB m dB dB T= 25C T= 25C T= 25C T= 25C The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100631 Rev A Preliminary Preliminary SGA-3286 DC-3600 MHz 2.7V SiGe Amplifier Pin # 1 2 3 4 Function Description RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. GND Sames as Pin 2 Device Schematic Application Schematic for +5V Operation at 900 MHz 1uF 68pF 65 ohms VCC =+5V 33nH 50 ohm microstrip 50 ohm microstrip 2 1 3 100pF 100pF 4 Application Schematic for +5V Operation at 1900 MHz 1uF 22pF 65 ohms VCC =+5V 22nH 50 ohm microstrip 50 ohm microstrip 2 1 3 68pF 4 68pF The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100631 Rev A Preliminary Preliminary SGA-3286 DC-3600 MHz 2.7V SiGe Amplifier S21, Id =35mA, T=+25C 3500 5000 5000 2400 2400 -4 0 1900 -4 0 500 -3 0 100 -3 0 5000 dB -2 0 3500 dB -2 0 2400 -1 0 1900 -1 0 900 0 900 S22, Id =35mA, T=+25C S11, Id =35mA, T=+25C 500 1900 Frequency MHz 0 100 3500 Frequency MHz 900 -4 0 500 0 100 -3 0 5000 6 3500 dB -2 0 2400 12 1900 -1 0 900 18 500 0 100 dB S12, Id =35mA, T=+25C 24 Frequency MHz Frequency MHz S22, Id=35mA, Ta= +25C S11, Id=35mA, Ta= +25C Freq. Min = 0.1 GHz Freq. Max = 3.6 GHz Freq. Min = 0.1 GHz Freq. Max = 3.6 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100631 Rev A Preliminary Preliminary SGA-3286 DC-3600 MHz 2.7V SiGe Amplifier 5000 -1 0 2400 1900 -4 0 900 -4 0 5000 -3 0 3500 -3 0 500 -2 0 100 dB dB -2 0 2400 5000 -1 0 1900 3500 0 900 3500 S22, Id =35mA, T=-40C S11, Id =35mA, T=-40C 0 500 2400 100 Frequency MHz Frequency MHz 100 1900 -4 0 500 0 5000 -3 0 3500 6 2400 dB -2 0 1900 dB 1 2 900 -1 0 500 18 100 0 900 S12, Id =35mA, T=-40C S21, Id =35mA, T=-40C 24 Frequency MHz Frequency MHz S22, Id=35mA, Ta= -40C S11, Id=35mA, Ta= -40C Freq. Min = 0.1 GHz Freq. Max = 3.6 GHz Freq. Min = 0.1 GHz Freq. Max = 3.6 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100631 Rev A Preliminary Preliminary SGA-3286 DC-3600 MHz 2.7V SiGe Amplifier Frequency MHz 5000 3500 5000 3500 2400 -4 0 1900 -4 0 500 -3 0 100 -3 0 5000 dB -2 0 3500 dB -2 0 2400 -1 0 1900 -1 0 900 0 900 S22, Id =35mA, T=85C S11, Id =35mA, T=85C 0 500 2400 Frequency MHz Frequency MHz 100 1900 500 -4 0 100 0 5000 -3 0 3500 6 2400 dB -2 0 1900 dB 1 2 900 -1 0 500 18 100 0 900 S12, Id =35mA, T=85C S21, Id =35mA, T=85C 24 Frequency MHz S22, Id=35mA, Ta= 85C S11, Id=35mA, Ta= 85C Freq. Min = 0.1 GHz Freq. Max = 3.6 GHz Freq. Min = 0.1 GHz Freq. Max = 3.6 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100631 Rev A Preliminary Preliminary SGA-3286 DC-3600 MHz 2.7V SiGe Amplifier Part Number Ordering Information Absolute Maximum Ratings Parameter Supply C urrent Operati ng Temperature Maxi mum Input Power Storage Temperature Range Operati ng Juncti on Temperature Value U nit Part Number Reel Siz e 70 mA SGA-3286-TR1 7" 1000 -40 to +85 C SGA-3286-TR2 13" 3000 +10 dB m -40 to +85 C +150 C Caution: Devices/Reel Recommended Bias Resistor Values Operation of this device above any one of these parameters may cause permanent damage. Appropriate precautions in handling, packaging and testing devices must be observed. Thermal Resistance (Lead-Junction): 97 C/W Supply Voltage(Vs) 4V 5V 7.5V 9V 12V Rbias (Ohms) 37 66 137 180 266 Package Dimensions Pin Designation 1 RF in 2 GND 3 RF out and Bias 4 GND PCB Pad Layout The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100631 Rev A