MMBT2907AL-AE3-R - Unisonic Technologies Co., Ltd.

UNISONIC TECHNOLOGIES CO., LTD

MMBT2907A PNP SILICON TRANSISTOR

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PNP GENERAL PURPOSE

AMPLIFIER

 DESCRIPTION

This UTC MMBT2907A is designed for use as a general

purpose amplifier and switch requiring collector currents to 600 mA.

 ORDERING INFORMATION

Ordering Number Package Pin Assignment Packing

Lead Free Halogen Free 1 2 3

MMBT2907AL-AE3-R MMBT2907AG-AE3-R SOT-23 E B C Tape Reel

MMBT2907AL-AL3-R MMBT2907AG-AL3-R SOT-323 E B C Tape Reel

 MARKING

2F L: Lead Free

G: Halogen Free

MMBT2907A PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2 of 6

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 ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT

Collector-Emitter Voltage VCEO -60 V

Collector-Base Voltage VCBO -60 V

Emitter-Base Voltage VEBO -5 V

Collector Current Continuous IC -600 mA

Power Dissipation SOT-23 PD 350 mW

SOT-323 275 mW

Junction Temperature TJ +150 °С

Storage Temperature TSTG -55 ~ +150 °С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL DATA

PARAMETER SYMBOL RATINGS UNIT

Junction to Case SOT-23 θJA 357 °C/W

SOT-323 455 °C/W

 ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Note) BVCEO IC=-10mA, IB=0 -60 V

Collector-Base Breakdown Voltage BVCBO IC=-10μA, IE=0 -60 V

Emitter-Base Breakdown Voltage BVEBO IE=-10μA , IC=0 -5 V

Base Cutoff Current IB VCB=-30V, VEB=-0.5V

-50 nA

Collector Cutoff Current ICE

X

VCE=-30V, VBE=-0.5V

-50 nA

Collector Cutoff Current ICBO VCB=-50V, IE=0

-0.02 μA

VCB=-50V, IE=0, TA=150°С

-20 μA

ON CHARACTERISTICS

DC Current Gain hFE

IC=-0.1mA, VCE=-10V 75

IC=-1.0 mA, VCE=-10V 100

IC=-10 mA, VCE=-10V 100

IC=-150 mA, VCE=-10V (Note) 100 300

IC=-500 mA, VCE=-10V (Note) 50

Collector-Emitter Saturation Voltage (Note) VCE(SAT)

IC=-150 mA, IB=-15mA

-0.4 V

IC=-500 mA, IB=-50mA

-1.6 V

Base-Emitter Saturation Voltage VBE(SAT)

IC=-150 mA, IB=-15mA (Note)

-1.3 V

IC=-500 mA, IB=-50mA

-2.6 V

SMALL SIGNAL CHARACTERISTICS

Current Gain – Bandwidth Product fT I

C=-50mA, VCE=-20V, f=100MHz 200 MHz

Output Capacitance Cob V

CB=-10V, IE=0, f=100kHz 8 pF

Input Capacitance Cib V

EB=-2V, IC=0, f=100kHz 30 pF

SWITCHING CHARACTERISTICS

Turn-on Time tON VCC=30V, IC=-150mA,

IB1=-15mA

45 ns

Delay Time tDLY 10 ns

Rise Time tR 40 ns

Turn-off Time tOFF VCC=6V, IC=-150mA,

IB1= IB2=-15mA

100 ns

Storage Time tS 80 ns

Fall Time tF 30 ns

Note: Pulse Test: Pulse Width ≤ 300ms, Duty Cycle≤2.0%

MMBT2907A PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 3 of 6

www.unisonic.com.tw QW-R220-001.E

 TEST CIRCUITS

MMBT2907A PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 4 of 6

www.unisonic.com.tw QW-R220-001.E

 TYPICAL CHARACTERISTICS

-0.1 -1 -10 -100 -300

200

0

Collector Current, IC (mA)

Typical Pulsed Current Gain

vs Collector Current

DC Current Gain, hFE

-0.1

100

-0.4

-100-1 -10 -500

Collector Emitter Saturation Voltage

vs Collector Current

Collector Emitter Voltage, VCE(SAT) (V)

-0.3

-0.3 -3 -30

300

400

500

125°С

25°С

-0.5

Collector Current, IC (mA)

-40°С

β=10

VCE =-5V

-40°С

0

-0.2

125°С

25°С

-0.4

-0.8

-100-1 -10 -500

Base Emitter Saturation Voltage

vs Collector Current

Base Emitter Voltage, VBE(SAT) (V)

-0.6

-1

Collector Current, IC(mA)

β=10

-0.4

-0.8

-10-0.1 -1 -25

Base Emitter on Voltage

vs Collector Current

Base Emitter on Voltage, VBE(ON) (V)

-0.6

-1

Collector Current, IC (mA)

-0.2

0

25°С

-40°С

125°С

0

VCE =-5V

125°С

25°С

-40°С

Ambient Temperature, Ta(°С)

Collector Cutoff Current vs

Ambient Temperature

Collector Current, I

CBO

(nA)

-0.1

7525 50 100 125

-100

-1

-10

VCB=-35V

0.1 110

-50

12

4

Reverse Bias Voltage (V)

Input And Output Capacitance vs

Reverse Bias Voltage

Capacitance (pF)

8

16

20

Cob

0.01 0

Cte

MMBT2907A PNP SILICON TRANSISTOR

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www.unisonic.com.tw QW-R220-001.E

 TYPICAL CHARACTERISTICS(Cont.)

Time (ns)

Turn On Base Current, IB1 (mA)

MMBT2907A PNP SILICON TRANSISTOR

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 TYPICAL COMMON EMIT TER CHARACTERISTICS (f=1kHz)

Collector Voltage, VCE (V)

-12

-4 -8

Common Emitter Characteristics

Relative To Values At VCE=10V, Char

-20-16

0.8

hoe

hre

hfe

hie

IC=-10mA

Ta=25°С

2

-5-1 -2 -30

Common Emitter Characteristics

Relative to Values At IC=10mA, Char

1

5

-50-20

0.1

Collector Current, IC(mA)

hre

hFE

0.5

0.2

hie

VCE =-10V

TA=25°С

hoe

hre and hoe

hie

hFE

0.9

1

1.1

1.2

1.3

Char.Relative To Voltage At Ta=25°С

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.