UTRON UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY REVISION Preliminary Rev. 0.5 Preliminary Rev. 0.6 Preliminary Rev. 0.7 Preliminary Rev. 0.8 DESCRIPTION Original. 1. The symbols CE# and OE# and WE# are revised as. CE and OE and WE . 2. Separate Industrial and Consumer SPEC. 3. Add access time 55ns range. 1. Add SOP and STSOP package 1. Revised 36-pin TFBGA package outline dimension a Rev. 0.7 : ball diameter=0.3mm b Rev. 0.8 : ball diameter=0.35mm DATE Mar, 2001 Jun 21,2001 Dec 18,2001 Apr 30,2002 2. Revised DC ELECTRICAL CHARACTERISTICS a Revised VIH as 2.2V Rev. 1.0 Rev. 1.1 1. Revised Fast access time : 55/70/100ns 55ns (max.) for Vcc=3.0V~3.6V 70/100ns (max.) for Vcc=2.7V~3.6V 2. Revised Output Disable to Output in High Z (tOHZ*) : 30 35ns 1. Revised Operation surrent : -Icc(max) 45/35/25mA 40/30/25mA -Icc(Typ) 30/25/20mA 30/20/16mA 2. Revised Standby current : 20/3uA 20/2uA 3. Revised VOH(Typ) : NA 2.7V 4. Add VIH(max)=VCC+2.0V for pulse width less than 10ns. VIL(min)=VSS-2.0V for pulse width less than 10ns. 5. Revised AC Table tOHZ* characteristics 6. Add order information for lead free product UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 1 Aug 30,2002 May 06,2003 P80052 UTRON UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 FEATURES GENERAL DESCRIPTION Fast access time : 55/70/100ns CMOS Low power operating Operating current : 40/30/25mA (Icc max.) Standby current : 20A (typ.) L-version 2A (typ.) LL-version Single 2.7V~3.6V power supply Industrial Temperature : -40~85 All TTL compatible inputs and outputs Fully static operation Three state outputs Data retention voltage : 1.5V (min) Package : 32-pin 450mil SOP 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 36-pin 6mm x 8mm TFBGA The UT62L5128(I) is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT62L5128(I) operates from a wide range 2.7V~3.6V power supply and supports industrial operating temperature range. The UT62L5128(I) is designed for high density and low power memory applications. The device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.5V. FUNCTIONAL BLOCK DIAGRAM A0-A18 DECODER 512K x 8 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O Vcc Vss I/O1-I/O8 CE OE WE CONTROL CIRCUIT UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 2 P80052 UTRON UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 PIN CONFIGURATION A18 1 32 Vcc A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE A2 10 23 A10 A1 11 22 CE A0 12 21 I/O8 I/O1 13 20 I/O7 I/O2 14 19 I/O6 I/O3 15 18 I/O5 Vss 16 17 I/O4 A A0 A1 NC A3 A6 A8 B I/O5 A2 WE A4 A7 I/O1 C I/O6 NC A5 D Vss Vcc E Vcc Vss F I/O7 G I/O8 H A9 1 SOP A11 A9 A8 A13 WE A17 A15 Vcc A18 A16 A14 A12 A7 A6 A5 A4 A17 A18 CE A16 A15 I/O4 A10 A11 A12 A13 A14 4 5 6 OE 2 3 I/O3 TFBGA 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 I/O2 PIN DESCRIPTION OE A10 CE SYMBOL A0 - A18 I/O1 - I/O8 I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 A3 CE WE OE Vcc Vss NC DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Input Write Enable Input Output Enable Input Power Supply Ground No Connection TSOP-1 / STSOP UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 3 P80052 UTRON UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 ABSOLUTE MAXIMUM RATINGS* PARAMETER Terminal Voltage with Respect to VSS Operating Temperature Industrial Storage Temperature Power Dissipation DC Output Current Soldering Temperature (under 10 secs) SYMBOL VTERM TA TSTG PD IOUT Tsolder RATING -0.5 to 4.6 -40 to 85 -65 to 150 1 50 260 UNIT V W mA *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write Note: WE X H H L CE H L L L I/O OPERATION High - Z High - Z DOUT DIN OE X H L X SUPPLY CURRENT ISB, ISB1 ICC , ICC1, ICC2 ICC , ICC1, ICC2 ICC , ICC1, ICC2 H = VIH, L=VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS (VCC = 2.7V~3.6V, TA = -40 to 85) PARAMETER Power Voltage Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Operating Power Supply Current Average Operation Current SYMBOL VCC TEST CONDITION *1 VIH *2 VIL ILI ILO VOH VOL ICC ICC1 VSS VIN VCC VSS VI/O VCC; Output Disable IOH= -1mA IOL= 2.1mA Cycle time=min, 100%duty II/O=0mA, CE =VIL 100% duty, II/O=0mA, CE 0.2, other pins at 0.2V or Vcc-0.2V ICC2 Standby Current (TTL) ISB Standby Current (CMOS) ISB1 CE =VIH, other pins = VIH or VIL CE =VCC-0.2V other pins at 0.2V or Vcc-0.2V 55 70 100 TCycle= 1s Tcycle= 500ns -L -LL MIN. TYP. MAX. UNIT 2.7 3.0 3.6 V 2.2 VCC+0.3 V -0.2 0.6 V -1 1 A -1 1 A 2.2 2.7 V 0.4 V mA 30 40 mA 20 30 16 25 mA - 4 5 mA - 8 10 mA - 0.3 0.5 mA - 20 2 80 20 A A Notes: 1. Overshoot : Vcc+2.0v for pulse width less than 10ns. 2. Undershoot : Vss-2.0v for pulse width less than 10ns. 3. Overshoot and Undershoot are sampled, not 100% tested. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 4 P80052 UTRON UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 CAPACITANCE (TA=25, f=1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 6 8 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0V to 3.0V 5ns 1.5V CL = 30pF+1TTL , IOH/IOL = -1mA / 2.1mA AC ELECTRICAL CHARACTERISTICS (VCC = 2.7V~3.6V , TA = -40 to 85) (1) READ CYCLE UT62L5128(I)-100 SYMBOL UT62L5128(I)-55 UT62L5128(I)-70 UNIT MIN. MAX. MIN. MAX. MIN. MAX. Read Cycle Time tRC 55 70 100 ns Address Access Time tAA 55 70 100 ns Chip Enable Access Time tACE 55 70 100 ns Output Enable Access Time tOE 30 35 50 ns Chip Enable to Output in Low Z tCLZ* 10 10 10 ns Output Enable to Output in Low Z tOLZ* 5 5 5 ns Chip Disable to Output in High Z tCHZ* 20 25 30 ns Output Disable to Output in High Z tOHZ* 20 25 30 ns Output Hold from Address Change tOH 10 10 10 ns PARAMETER (2) WRITE CYCLE SYMBOL UT62L5128(I)-55 UT62L5128(I)-70 UT62L5128(I)-100 UNIT MIN. MAX. MIN. MAX. MIN. MAX. Write Cycle Time tWC 55 70 100 ns Address Valid to End of Write tAW 50 60 80 ns Chip Enable to End of Write tCW 50 60 80 ns Address Set-up Time tAS 0 0 0 ns Write Pulse Width tWP 45 55 70 ns Write Recovery Time tWR 0 0 0 ns Data to Write Time Overlap tDW 25 30 40 ns Data Hold from End of Write Time tDH 0 0 0 ns Output Active from End of Write tOW* 5 5 5 ns Write to Output in High Z tWHZ* 30 30 40 ns PARAMETER *These parameters are guaranteed by device characterization, but not production tested. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 5 P80052 UTRON UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA tOH Dout tOH Previous data valid Data Valid READ CYCLE 2 ( CE and OE Controlled) (1,3,4,5) t RC Address tAA CE tACE OE tCHZ tOE tOHZ tCLZ tOLZ Dout t OH High-Z Data Valid High-Z Notes : 1. WE is high for read cycle. 2.Device is continuously selected OE =low, CE =low. 3.Address must be valid prior to or coincident with CE =low,; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL=5pF. Transition is measured500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ, tOHZ is less than tOLZ. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 6 P80052 UTRON UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 WRITE CYCLE 1 ( WE Controlled) (1,2,3,5,6) tW C Address tAW CE t CW t AS tW P tW R WE t W HZ Dout tOW High-Z (4) (4) tDW Din t DH Data Valid WRITE CYCLE 2 ( CE Controlled) (1,2,5,6) tW C A ddress tA W CE tW R tA S tC W tW P WE tW H Z D out H igh-Z (4) tD W D in tD H D ata V alid UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 7 P80052 UTRON UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 Notes : 1. WE , CE must be high during all address transitions. 2.A write occurs during the overlap of a low CE , low WE . 3.During a WE controlled write cycle with OE low, tWP must be greater than tWHZ+tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE low transition occurs simultaneously with or after WE low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured 500mV from steady state. DATA RETENTION CHARACTERISTICS (TA = -40 to 85) PARAMETER Vcc for Data Retention Data Retention Current Chip Disable to Data Retention Time Recovery Time SYMBOL VDR IDR tCDR TEST CONDITION CE VCC-0.2V Vcc=1.5V CE VCC-0.2V See Data Retention Waveforms (below) tR -L - LL MIN. 1.5 TYP. - MAX. 3.6 UNIT V - 1 0.5 50 20 A A 0 - - ms 5 - - ms DATA RETENTION WAVEFORM Low Vcc Data Retention Waveform ( CE controlled) VDR 1.5V VCC Vcc(min.) Vcc(min.) tCDR CE VIH tR CE VCC-0.2V UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 8 VIH P80052 UTRON UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 PACKAGE OUTLINE DIMENSION 32-pin 450mil SOP Package Outline Dimension UNIT SYMBOL A A1 A2 b D E E1 e L L1 S y INCH(BASE) MM(REF) 0.118 (MAX) 0.004 (MIN) 0.111 (MAX) 0.016 (TYP) 0.817 (MAX) 0.445 0.005 0.555 0.012 0.050 (TYP) 0.0347 0.008 0.055 0.008 0.026 (MAX) 0.004 (MAX) o o 0 ~10 2.997 (MAX) 0.102 (MIN) 2.82 (MAX) 0.406 (TYP) 20.75 (MAX) 11.303 0.127 14.097 0.305 1.270 (TYP) 0.881 0.203 1.397 0.203 0.660 (MAX) 0.101 (MAX) o o 0 ~10 UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 9 P80052 UTRON UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 32-pin 8mm x 13.4mm STSOP Package Outline Dimension HD cL 32 16 17 b E e 1 "A" Seating Plane D 16 y 17 0.254 A2 A GAUGE PLANE A1 0 SEATING PLANE L1 "A" DATAIL VIEW 32 1 UNIT SYMBOL A A1 A2 b D E e HD L1 y INCH(BASE) MM(REF) 0.047 (MAX) 0.004 0.002 0.039 0.002 0.008 0.001 0.465 0.004 0.315 0.004 0.020 (TYP) 0.528 0.008 0.0315 0.004 0.003 (MAX) o o 0 5 1.20 (MAX) 0.10 0.05 1.00 0.05 0.200 0.025 11.800 0.100 8.000 0.100 0.50 (TYP) 13.40 0.20. 0.80 0.10 0.076 (MAX) o o 0 5 UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 10 P80052 UTRON UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 32-pin 8mm x 20mm TSOP- Package Outline Dimension HD C L 32 b E e 1 16 17 Seating Plane "A" y D 17 A A2 16 0.254 A1 0 GAUGE PLANE SEATING PLANE 32 1 "A" DETAIL VIEW L1 UNIT SYMBOL A A1 A2 b D E e HD L1 y INCH(BASE) MM(REF) 0.047 (MAX) 0.004 0.002 0.039 0.002 0.008 + 0.002 - 0.001 0.724 0.004 0.315 0.004 0.020 (TYP) 0.787 0.008 0.0315 0.004 0.003 (MAX) o o 0 5 1.20 (MAX) 0.10 0.05 1.00 0.05 0.20 + 0.05 -0.03 18.40 0.10 8.00 0.10 0.50 (TYP) 20.00 0.20 0.80 0.10 0.076 (MAX) o o 0 5 UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 11 P80052 UTRON Rev. 1.1 UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM 36-Pin 6.0mm X 8.0mm TFBGA Package Outline Dimension UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 12 P80052 UTRON UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 ORDERING INFORMATION PART NO. UT62L5128SC-55LI UT62L5128SC-55LLI UT62L5128SC-70LI UT62L5128SC-70LLI UT62L5128SC-100LI UT62L5128SC-100LLI UT62L5128LS-55LI UT62L5128LS-55LLI UT62L5128LS-70LI UT62L5128LS-70LLI UT62L5128LS-100LI UT62L5128LS-100LLI UT62L5128LC-55LI UT62L5128LC-55LLI UT62L5128LC-70LI UT62L5128LC-70LLI UT62L5128LC-100LI UT62L5128LC-100LLI UT62L5128BS-55LI UT62L5128BS-55LLI UT62L5128BS-70LI UT62L5128BS-70LLI UT62L5128BS-100LI UT62L5128BS-100LLI ACCESS TIME (ns) 55 55 70 70 100 100 55 55 70 70 100 100 55 55 70 70 100 100 55 55 70 70 100 100 STANDBY CURRENT (A) typ. 20 2 20 2 20 2 20 2 20 2 20 2 20 2 20 2 20 2 20 2 20 2 20 2 UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 13 PACKAGE 32 PIN SOP 32 PIN SOP 32 PIN SOP 32 PIN SOP 32 PIN SOP 32 PIN SOP 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP 32 PIN TSOP- 32 PIN TSOP- 32 PIN TSOP- 32 PIN TSOP- 32 PIN TSOP- 32 PIN TSOP- 36 PIN TFBGA 36 PIN TFBGA 36 PIN TFBGA 36 PIN TFBGA 36 PIN TFBGA 36 PIN TFBGA P80052 UTRON UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 ORDERING INFORMATION (for lead free product) PART NO. UT62L5128SCL-55LI UT62L5128SCL-55LLI UT62L5128SCL-70LI UT62L5128SCL-70LLI UT62L5128SCL-100LI UT62L5128SCL-100LLI UT62L5128LSL-55LI UT62L5128LSL-55LLI UT62L5128LSL-70LI UT62L5128LSL-70LLI UT62L5128LSL-100LI UT62L5128LSL-100LLI UT62L5128LCL-55LI UT62L5128LCL-55LLI UT62L5128LCL-70LI UT62L5128LCL-70LLI UT62L5128LCL-100LI UT62L5128LCL-100LLI UT62L5128BSL-55LI UT62L5128BSL-55LLI UT62L5128BSL-70LI UT62L5128BSL-70LLI UT62L5128BSL-100LI UT62L5128BSL-100LLI ACCESS TIME (ns) 55 55 70 70 100 100 55 55 70 70 100 100 55 55 70 70 100 100 55 55 70 70 100 100 STANDBY CURRENT (A) typ. 20 2 20 2 20 2 20 2 20 2 20 2 20 2 20 2 20 2 20 2 20 2 20 2 UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 14 PACKAGE 32 PIN SOP 32 PIN SOP 32 PIN SOP 32 PIN SOP 32 PIN SOP 32 PIN SOP 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP 32 PIN TSOP- 32 PIN TSOP- 32 PIN TSOP- 32 PIN TSOP- 32 PIN TSOP- 32 PIN TSOP- 36 PIN TFBGA 36 PIN TFBGA 36 PIN TFBGA 36 PIN TFBGA 36 PIN TFBGA 36 PIN TFBGA P80052 UTRON Rev. 1.1 UT62L5128(I) 512K X 8 BIT LOW POWER CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 15 P80052