Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-34143
Features
• Low Noise Figure
• Excellent Uniformity in
Product Specifications
• 800 micron Gate Width
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
• Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 4 V, 60 mA (Typ.)
• 0.5 dB Noise Figure
• 17.5 dB Associated Gain
• 20 dBm Output Power at
1 dB Gain Compression
• 31.5 dBm Output 3rd Order
Intercept
Applications
• Tower Mounted Amplifier
and Low Noise Amplifier for
GSM/TDMA/CDMA Base
Stations
•
LNA for Wireless LAN, WLL/
RLL and MMDS Applications
• General Purpose Discrete
PHEMT for other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Description
Agilent’s ATF-34143 is a high
dynamic range, low noise PHEMT
housed in a 4-lead SC-70 (SOT-343)
surface mount plastic package.
Based on its featured performance,
ATF-34143 is ideal for the first
stage of base station LNA due to
the excellent combination of low
noise figure and high linearity
[1]
.
The device is also suitable for
applications in Wireless LAN,
WLL/RLL, MMDS, and other
systems requiring super low noise
figure with good intercept in the
450 MHz to 10 GHz frequency
range.
Note:
1. From the same PHEMT FET family, the
larger geometry ATF-33143 may also be
considered either for the higher linearity
performance or easier circuit design for
stability in the lower frequency bands
(800-900 MHz).
Pin Connections and
Package Marking
Note: Top View. Package marking
provides orientation and identification.
“4P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
GATE
4Px
SOURCE
DRAIN SOURCE
2
ATF-34143 Absolute Maximum Ratings[1]
Absolute
Symbol Parameter Units Maximum
VDS Drain - Source Voltage[2] V 5.5
VGS Gate - Source Voltage[2] V-5
V
GD Gate Drain Voltage[2] V-5
IDDrain Current[2] mA Idss[3]
Pdiss Total Power Dissipation[4] mW 725
Pin max RF Input Power dBm 17
TCH Channel Temperature °C 160
TSTG Storage Temperature °C -65 to 160
θjc Thermal Resistance[5] °C/W 165
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Assumes DC quiescent conditions.
3. VGS = 0 volts.
4. Source lead temperature is 25°C.
Derate 6 mW/°C for TL > 40°C.
5. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
6. Under large signal conditions, VGS may
swing positive and the drain current
may exceed Idss. These conditions are
acceptable as long as the maximum
Pdiss and Pin max ratings are not
exceeded.
Product Consistency Distribution Charts [7]
VDS (V)
Figure 1. Typical/Pulsed I-V Curves
[6]
.
(V
GS
= -0.2 V per step)
IDS (mA)
02 468
250
200
150
100
50
0
+0.6 V
0 V
–0.6 V
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 4 V, 60 mA.
LSL=29.0, Nominal=31.8, USL=35.0
29 3130 33 3432 35
120
100
80
60
40
20
0
-3 Std +3 Std
Cpk = 1.37245
Std = 0.66
9 Wafers
Sample Size = 450
NF (dB)
Figure 3. NF @ 2 GHz, 4 V, 60 mA.
LSL=0.1, Nominal=0.47, USL=0.8
0 0.40.2 0.6 0.8
120
100
80
60
40
20
0
-3 Std +3 Std
Cpk = 2.69167
Std = 0.04
9 Wafers
Sample Size = 450
GAIN (dB)
Figure 4. Gain @ 2 GHz, 4 V, 60 mA.
LSL=16.0, Nominal=17.5, USL=19.0
16 1716.5 18 18.517.5 19
120
100
80
60
40
20
0
-3 Std +3 Std
Cpk = 2.99973
Std = 0.15
9 Wafers
Sample Size = 450
Notes:
7. Distribution data sample size is 450
samples taken from 9 different wafers.
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
8. Measurements made on production
test board. This circuit represents a
trade-off between an optimal noise
match and a realizeable match based
on production test requirements.
Circuit losses have been de-embedded
from actual measurements.
3
ATF-34143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameters and Test Conditions Units Min. Typ.[2] Max.
Idss [1] Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 90 118 145
VP[1] Pinchoff Voltage VDS = 1.5 V, IDS = 10% of Idss V -0.65 -0.5 -0.35
IdQuiescent Bias Current VGS = 0.34 V, VDS = 4 V mA — 60 —
gm[1] Transconductance VDS = 1.5 V, gm = Idss /V
Pmmho 180 230 —
IGDO Gate to Drain Leakage Current VGD = 5 V µA 500
Igss Gate Leakage Current VGD = VGS = -4 V µA — 30 300
NF Noise Figure f = 2 GHz VDS = 4 V, IDS = 60 mA dB 0.5 0.8
VDS = 4 V, IDS = 30 mA 0.5
f = 900 MHz VDS = 4 V, IDS = 60 mA dB 0.4
GaAssociated Gain f = 2 GHz VDS = 4 V, IDS = 60 mA dB 16 17.5 19
VDS = 4 V, IDS = 30 mA 17
f = 900 MHz VDS = 4 V, IDS = 60 mA dB 21.5
OIP3 Output 3rd Order f = 2 GHz VDS = 4 V, IDS = 60 mA dBm 29 31.5
Intercept Point[3] +5 dBm Pout /Tone VDS = 4 V, IDS = 30 mA 30
f = 900 MHz VDS = 4 V, IDS = 60 mA dBm 31
+5 dBm Pout /Tone
P1dB 1 dB Compressed f = 2 GHz VDS = 4 V, IDS = 60 mA dBm 20
Intercept Point[3] VDS = 4 V, IDS = 30 mA 19
f = 900 MHz VDS = 4 V, IDS = 60 mA dBm 18.5
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Using production test board.
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and associated impedance matching circuit
losses. Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag = 0.30
Γ_ang = 56°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
4
ATF-34143 Typical Performance Curves
Notes:
1. Measurements made on a fixed toned production test board that was tuned for optimal gain match with reasonable noise figure at 4 V,
60 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to
a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and
IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm is approached.
I
DSQ
(mA)
Figure 6. OIP3 and P
1dB
vs. I
DS
and
V
DS
Tuned for NF @ 4 V, 60 mA at
2 GHz.[1,2]
OIP3, P
1dB
(dBm)
04020 80 12010060 140
35
30
25
20
15
10
5
0
OIP3
3 V
4 V
P
1dB
I
DSQ
(mA)
Figure 9. OIP3 and P
1dB
vs. I
DS
and
V
DS
Tuned for NF @ 4 V, 60 mA at
900 MHz.[1,2]
OIP3, P
1dB
(dBm)
04020 80 10060 120
35
30
25
20
15
10
5
0
OIP3
3 V
4 V
P
1dB
CURRENT (mA)
Figure 8. Noise Figure vs. Current
(I
d
)
and Voltage (V
DS
) at 2 GHz.[1,2]
NOISE FIGURE (dB)
04020 80 10060 120
1
0.8
0.6
0.4
0.2
0
3 V
4 V
CURRENT (mA)
Figure 11. Noise Figure vs. Current
(I
d
)
and Voltage (V
DS
) at 900 MHz.[1,2]
NOISE FIGURE (dB)
04020 80 10060 120
3 V
4 V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
CURRENT (mA)
Figure 7. Associated Gain vs. Current
(I
d
)
and Voltage (V
D
) at 2 GHz.[1,2]
ASSOCIATED GAIN (dB)
04020 80 10060 120
3 V
4 V
20
15
10
5
0
CURRENT (mA)
Figure 10. Associated Gain vs. Current
(I
d
)
and Voltage (V
D
) at 900 MHz.[1,2]
ASSOCIATED GAIN (dB)
04020 80 10060 120
3 V
4 V
25
20
15
10
5
0
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency
and
Current at 4 V.
Fmin (dB)
0 4.02.0 6.0
60 mA
40 mA
20 mA
1.2
1.0
0.8
0.6
0.4
0.2
0
FREQUENCY (GHz)
Figure 13. Associated Gain vs.
Frequency
and Current at 4 V.
Ga (dB)
0 2.01.0 4.0 5.03.0 6.0
25
20
15
10
5
60 mA
40 mA
20 mA
5
ATF-34143 Typical Performance Curves, continued
Note:
1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to
a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and
IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm is approached.
Figure 19. P
1dB
vs. I
DS
Active Bias
Tuned for min NF @ 4V, 60 mA at
900 MHz.
FREQUENCY (MHz)
Figure 15.
P
1dB
,
IP3 vs. Frequency
and
Temperature at V
DS
= 4 V,
I
DS
= 60 mA.
[1]
P1dB, OIP3 (dBm)
0 2000 4000 6000 8000
33
31
29
27
25
23
21
19
17
85 °C
25 °C
-40 °C
OIP3
P
1dB
I
DSQ
(mA)
Figure 16. NF, Gain, OP1dB and OIP3
vs. I
DS
at 4 V and 3.9 GHz Tuned for
Noise Figure
.
[1]
GAIN (dB), OP1dB, and OIP3 (dBm)
NOISE FIGURE (dB)
04020 80 100 12060 140
Gain
OP1dB
OIP3
NF
35
30
25
20
15
10
5
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
I
DSQ
(mA)
Figure 17. NF, Gain, OP1dB and OIP3
vs. I
DS
at 4 V and 5.8 GHz Tuned for
Noise Figure
.
[1]
GAIN (dB), OP1dB, and OIP3 (dBm)
NOISE FIGURE (dB)
04020 80 100 12060
Gain
OP1dB
OIP3
NF
30
27
24
21
18
15
12
9
6
3
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
FREQUENCY (GHz)
Figure 14. Fmin and G
a
vs. Frequency
and Temperature at V
DS
= 4 V,
I
DS
= 60 mA.
G
a
(dB)
0 2000 4000 6000 8000
25
20
15
10
NF (dB)
1.5
1.0
0.5
0
85 °C
25 °C
-40 °C
I
DS
(mA)
Figure 18. P
1dB
vs. I
DS
Active Bias
Tuned for NF @ 4V, 60 mA at 2 GHz.
P
1dB
(dBm)
0 10050 150
25
20
15
10
5
0
-5
3 V
4 V
I
DS
(mA)
P
1dB
(dBm)
0 10050 150
25
20
15
10
5
0
-5
3 V
4 V
6
ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 120 mA
ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 60 mA
Gamma Gamma
Freq P1dB IdG1dB PAE1dB P3dBm IdPAE3dB Out_mag Out_ang
(GHz) (dBm) (mA) (dB) (%) (dBm) (mA) (%) (Mag) (Degrees)
0.9 18.2 75 27.5 22 20.5 78 36 0.48 102
1.5 18.7 58 24.5 32 20.8 59 51 0.45 117
1.8 18.8 57 23.0 33 21.1 71 45 0.42 126
2 18.8 59 22.2 32 21.9 81 47 0.40 131
4 20.2 66 13.9 38 22.0 77 48 0.25 -162
6 21.2 79 9.9 37 23.5 102 46 0.18 -77
Pin (dBm)
Figure 20. Swept Power Tuned for
Power at 2 GHz, VDS = 4 V, IDSQ = 120 mA.
Pout (dBm), G (dB),
PAE (%)
-30 -10-20 10020
80
50
40
30
20
10
0
-10
Pout
Gain
PAE
P
in
(dBm)
Figure 21. Swept Power Tuned for
Power at 2 GHz, V
DS
= 4 V, I
DSQ
= 60 mA.
P
out
(dBm), G (dB),
PAE (%)
-30 -10-20 10020
80
60
40
20
0
-20
Pout
Gain
PAE
Notes:
1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to
a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and
IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm is approached.
2. PAE(%) = ((Pout – Pin) /Pdc) x 100
3. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
Gamma Gamma
Freq P1dB IdG1dB PAE1dB P3dBm IdPAE3dB Out_mag Out_ang
(GHz) (dBm) (mA) (dB) (%) (dBm) (mA) (%) (Mag) (Degrees)
0.9 20.9 114 25.7 27 22.8 108 44 0.34 136
1.5 21.7 115 21.9 32 23.1 95 53 0.31 152
1.8 21.3 111 20.5 30 23.0 105 47 0.30 164
2 22.0 106 19.5 37 23.7 115 50 0.28 171
4 22.7 110 12.7 40 23.6 111 47 0.26 -135
6 23.3 115 9.2 41 24.2 121 44 0.24 -66
7
ATF-34143 Typical Noise Parameters
VDS = 3 V, IDS = 20 mA
Freq. Fmin Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.90 13 0.16 21.8
0.9 0.11 0.85 27 0.14 18.3
1.0 0.11 0.84 31 0.13 17.8
1.5 0.14 0.77 48 0.11 16.4
1.8 0.17 0.74 57 0.10 16.0
2.0 0.19 0.71 66 0.09 15.6
2.5 0.23 0.65 83 0.07 14.8
3.0 0.29 0.59 102 0.06 14.0
4.0 0.42 0.51 138 0.03 12.6
5.0 0.54 0.45 174 0.03 11.4
6.0 0.67 0.42 -151 0.05 10.3
7.0 0.79 0.42 -118 0.10 9.4
8.0 0.92 0.45 -88 0.18 8.6
9.0 1.04 0.51 -63 0.30 8.0
10.0 1.16 0.61 -43 0.46 7.5
ATF-34143 Typical Scattering Parameters, VDS = 3 V, IDS = 20 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.5 0.96 -37 20.07 10.079 153 -29.12 0.035 68 0.40 -35 24.59
0.8 0.91 -60 19.68 9.642 137 -26.02 0.050 56 0.34 -56 22.85
1.0 0.87 -76 18.96 8.867 126 -24.29 0.061 48 0.32 -71 21.62
1.5 0.81 -104 17.43 7.443 106 -22.27 0.077 34 0.29 -98 19.85
1.8 0.78 -115 16.70 6.843 98 -21.62 0.083 28 0.28 -110 19.16
2.0 0.75 -126 16.00 6.306 90 -21.11 0.088 23 0.26 -120 18.55
2.5 0.72 -145 14.71 5.438 75 -20.45 0.095 15 0.25 -140 17.58
3.0 0.69 -162 13.56 4.762 62 -19.83 0.102 7 0.23 -156 16.69
4.0 0.65 166 11.61 3.806 38 -19.09 0.111 -8 0.22 174 15.35
5.0 0.64 139 10.01 3.165 16 -18.49 0.119 -21 0.22 146 14.25
6.0 0.65 114 8.65 2.706 -5 -18.06 0.125 -35 0.23 118 13.35
7.0 0.66 89 7.33 2.326 -27 -17.79 0.129 -49 0.25 91 10.91
8.0 0.69 67 6.09 2.017 -47 -17.52 0.133 -62 0.29 67 9.71
9.0 0.72 48 4.90 1.758 -66 -17.39 0.135 -75 0.34 46 8.79
10.0 0.75 30 3.91 1.568 -86 -17.08 0.140 -88 0.39 28 8.31
11.0 0.77 10 2.88 1.393 -105 -16.95 0.142 -103 0.43 10 7.56
12.0 0.80 -10 1.74 1.222 -126 -16.95 0.142 -118 0.47 -10 6.83
13.0 0.83 -29 0.38 1.045 -145 -17.39 0.135 -133 0.53 -28 6.18
14.0 0.85 -44 -0.96 0.895 -161 -17.86 0.128 -145 0.58 -42 5.62
15.0 0.86 -55 -2.06 0.789 -177 -18.13 0.124 -156 0.62 -57 5.04
16.0 0.85 -72 -3.09 0.701 166 -18.13 0.124 -168 0.65 -70 3.86
17.0 0.85 -88 -4.22 0.615 149 -18.06 0.125 177 0.68 -85 3.00
18.0 0.88 -101 -5.71 0.518 133 -18.94 0.113 165 0.71 -103 2.52
FREQUENCY (GHz)
Figure 23. MSG/MAG and |S
21
|
2
vs.
Frequency at 3 V, 20 mA.
MSG/MAG and
S
21
(dB)
04
2814 1610 12618
25
20
15
10
5
0
-5
-10
MSG
MAG
S21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values
are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
8
ATF-34143 Typical Noise Parameters
VDS = 3 V, IDS = 40 mA
Freq. Fmin Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.87 13 0.16 23.0
0.9 0.13 0.82 28 0.13 19.6
1.0 0.14 0.80 32 0.13 19.2
1.5 0.17 0.73 50 0.1 17.7
1.8 0.21 0.70 61 0.09 17.1
2.0 0.23 0.66 68 0.08 16.7
2.5 0.29 0.60 87 0.06 15.8
3.0 0.35 0.54 106 0.05 14.9
4.0 0.47 0.46 144 0.03 13.4
5.0 0.6 0.41 -178 0.03 12.1
6.0 0.72 0.39 -142 0.06 10.9
7.0 0.85 0.41 -109 0.12 9.9
8.0 0.97 0.45 -80 0.21 9.1
9.0 1.09 0.52 -56 0.34 8.4
10.0 1.22 0.61 -39 0.50 8.0
ATF-34143 Typical Scattering Parameters, VDS = 3 V, IDS = 40 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.5 0.96 -40 21.32 11.645 151 -30.46 0.030 68 0.29 -43 25.89
0.8 0.89 -64 20.79 10.950 135 -27.33 0.043 56 0.24 -70 24.06
1.0 0.85 -81 19.96 9.956 124 -25.68 0.052 49 0.24 -88 22.82
1.5 0.79 -109 18.29 8.209 104 -23.61 0.066 36 0.23 -118 20.95
1.8 0.76 -121 17.50 7.495 96 -22.97 0.071 32 0.23 -130 20.24
2.0 0.74 -131 16.75 6.876 88 -22.38 0.076 27 0.22 -141 19.57
2.5 0.70 -150 15.39 5.880 74 -21.51 0.084 19 0.22 -160 18.45
3.0 0.67 -167 14.19 5.120 61 -20.92 0.090 12 0.22 -176 17.55
4.0 0.64 162 12.18 4.063 38 -19.83 0.102 -1 0.21 157 16.00
5.0 0.64 135 10.54 3.365 16 -19.02 0.112 -14 0.22 131 14.78
6.0 0.65 111 9.15 2.867 -5 -18.34 0.121 -28 0.24 105 12.91
7.0 0.66 87 7.80 2.454 -26 -17.86 0.128 -42 0.28 81 11.03
8.0 0.69 65 6.55 2.125 -46 -17.46 0.134 -55 0.32 60 9.93
9.0 0.73 46 5.33 1.848 -65 -17.20 0.138 -69 0.37 40 9.07
10.0 0.76 28 4.33 1.647 -84 -16.83 0.144 -84 0.41 23 8.59
11.0 0.78 9 3.30 1.462 -104 -16.65 0.147 -99 0.45 5 7.84
12.0 0.80 -11 2.15 1.281 -123 -16.65 0.147 -114 0.50 -14 7.15
13.0 0.83 -30 0.79 1.095 -142 -17.08 0.140 -130 0.55 -31 6.50
14.0 0.86 -44 -0.53 0.941 -158 -17.52 0.133 -142 0.60 -45 5.96
15.0 0.87 -56 -1.61 0.831 -174 -17.72 0.130 -154 0.64 -59 5.39
16.0 0.86 -72 -2.60 0.741 169 -17.72 0.130 -166 0.66 -73 4.21
17.0 0.86 -88 -3.72 0.652 153 -17.79 0.129 179 0.69 -88 3.43
18.0 0.88 -102 -5.15 0.553 137 -18.64 0.117 166 0.72 -105 2.95
FREQUENCY (GHz)
Figure 24. MSG/MAG and |S
21
|
2
vs.
Frequency at 3 V, 40 mA.
MSG/MAG and
S
21
(dB)
04
2814 1610 12618
30
25
20
15
10
5
0
-5
-10
MSG
MAG
S
21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values
are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
9
ATF-34143 Typical Noise Parameters
VDS = 4 V, IDS = 40 mA
Freq. Fmin Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.87 13 0.16 22.8
0.9 0.13 0.82 27 0.14 19.4
1.0 0.14 0.80 31 0.13 18.9
1.5 0.17 0.73 49 0.11 17.4
1.8 0.20 0.70 60 0.10 16.9
2.0 0.22 0.66 67 0.09 16.4
2.5 0.28 0.60 85 0.07 15.6
3.0 0.34 0.54 104 0.05 14.8
4.0 0.45 0.45 142 0.03 13.3
5.0 0.57 0.40 180 0.03 12.0
6.0 0.69 0.38 -144 0.05 10.9
7.0 0.81 0.39 -111 0.11 9.9
8.0 0.94 0.43 -82 0.20 9.1
9.0 1.06 0.51 -57 0.32 8.5
10.0 1.19 0.62 -40 0.47 8.1
ATF-34143 Typical Scattering Parameters, VDS = 4 V, IDS = 40 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.5 0.95 -40 21.56 11.973 151 0.03 0.030 68 0.33 -39 26.01
0.8 0.89 -65 21.02 11.252 135 0.04 0.042 56 0.27 -63 24.28
1.0 0.85 -82 20.19 10.217 123 0.05 0.051 48 0.26 -80 23.02
1.5 0.78 -109 18.49 8.405 104 0.06 0.064 36 0.24 -109 21.18
1.8 0.73 -131 16.93 7.024 87 0.07 0.074 27 0.22 -131 20.46
2.0 0.70 -150 15.57 6.002 73 0.08 0.081 19 0.21 -150 19.77
2.5 0.67 -167 14.36 5.223 61 0.09 0.087 12 0.20 -167 18.70
3.0 0.64 162 12.34 4.141 37 0.10 0.098 -1 0.19 165 17.75
4.0 0.63 135 10.70 3.428 16 0.11 0.108 -13 0.20 138 16.26
5.0 0.64 111 9.32 2.923 -6 0.12 0.117 -27 0.21 111 15.02
6.0 0.66 87 7.98 2.506 -26 0.12 0.124 -41 0.24 86 12.93
7.0 0.69 65 6.74 2.173 -46 0.13 0.130 -54 0.29 63 11.14
8.0 0.72 47 5.55 1.894 -65 0.13 0.134 -68 0.34 42 10.09
9.0 0.76 28 4.55 1.689 -85 0.14 0.141 -82 0.38 26 9.24
10.0 0.78 9 3.53 1.501 -104 0.15 0.145 -97 0.42 8 8.79
11.0 0.80 -11 2.39 1.317 -124 0.15 0.145 -113 0.47 -11 8.09
12.0 0.84 -29 1.02 1.125 -143 0.14 0.140 -128 0.53 -29 7.35
13.0 0.86 -44 -0.30 0.966 -160 0.13 0.133 -141 0.58 -43 6.76
14.0 0.87 -56 -1.38 0.853 -176 0.13 0.130 -152 0.62 -58 6.19
15.0 0.86 -72 -2.40 0.759 167 0.13 0.131 -165 0.65 -71 5.62
16.0 0.86 -88 -3.53 0.666 151 0.13 0.130 -180 0.68 -86 4.43
17.0 0.89 -102 -4.99 0.563 134 0.12 0.119 168 0.71 -103 3.60
18.0 0.89 -101.85 -4.99 0.563 134 0.12 0.119 168 0.71 -103 3.15
FREQUENCY (GHz)
Figure 25. MSG/MAG and |S
21
|
2
vs.
Frequency at 4 V, 40 mA.
MSG/MAG and
S21 (dB)
04
2814 1610 12618
30
25
20
15
10
5
0
-5
MSG
MAG
S21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values
are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
10
ATF-34143 Typical Noise Parameters
VDS = 4 V, IDS = 60 mA
Freq. Fmin Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.11 0.84 15 0.14 24.5
0.9 0.14 0.78 30 0.12 20.7
1.0 0.15 0.77 34 0.12 20.2
1.5 0.20 0.69 53 0.10 18.5
1.8 0.23 0.66 62 0.10 17.7
2.0 0.26 0.62 72 0.09 17.2
2.5 0.33 0.55 91 0.07 16.3
3.0 0.39 0.50 111 0.05 15.4
4.0 0.53 0.43 149 0.03 13.7
5.0 0.67 0.39 -173 0.04 12.3
6.0 0.81 0.39 -137 0.07 11.1
7.0 0.96 0.42 -104 0.14 10.0
8.0 1.10 0.47 -76 0.26 9.2
9.0 1.25 0.54 -53 0.41 8.6
10.0 1.39 0.62 -37 0.60 8.2
ATF-34143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.5 0.95 -41 21.91 12.454 150 -31.06 0.028 68 0.29 -41 26.48
0.8 0.89 -65 21.33 11.654 134 -28.18 0.039 57 0.24 -67 24.75
1.0 0.85 -83 20.46 10.549 123 -26.56 0.047 49 0.23 -84 23.51
1.5 0.78 -111 18.74 8.646 103 -24.44 0.060 38 0.21 -114 21.59
1.8 0.75 -122 17.92 7.873 95 -23.74 0.065 33 0.21 -125 20.83
2.0 0.73 -133 17.16 7.207 87 -23.22 0.069 29 0.20 -136 20.19
2.5 0.69 -151 15.78 6.149 73 -22.38 0.076 22 0.19 -155 19.08
3.0 0.67 -168 14.56 5.345 60 -21.62 0.083 15 0.19 -171 18.09
4.0 0.64 161 12.53 4.232 37 -20.54 0.094 3 0.18 162 16.53
5.0 0.63 134 10.88 3.501 16 -19.58 0.105 -10 0.19 135 15.23
6.0 0.64 111 9.49 2.983 -5 -18.79 0.115 -24 0.21 109 12.89
7.0 0.66 86 8.15 2.557 -26 -18.27 0.122 -38 0.24 84 11.22
8.0 0.69 65 6.92 2.217 -46 -17.79 0.129 -51 0.28 62 10.21
9.0 0.73 46 5.72 1.932 -65 -17.46 0.134 -65 0.33 42 9.36
10.0 0.76 28 4.73 1.723 -84 -16.95 0.142 -79 0.38 25 8.94
11.0 0.78 9 3.70 1.531 -104 -16.71 0.146 -94 0.42 7 8.23
12.0 0.81 -11 2.57 1.344 -124 -16.71 0.146 -111 0.47 -12 7.56
13.0 0.84 -30 1.20 1.148 -143 -17.02 0.141 -126 0.52 -29 6.94
14.0 0.86 -44 -0.12 0.986 -159 -17.46 0.134 -139 0.58 -43 6.37
15.0 0.87 -56 -1.21 0.870 -175 -17.59 0.132 -150 0.62 -58 5.78
16.0 0.86 -72 -2.21 0.775 168 -17.59 0.132 -163 0.65 -71 4.60
17.0 0.86 -88 -3.35 0.680 151 -17.65 0.131 -178 0.68 -86 3.79
18.0 0.89 -101.99 -4.81 0.575 135 -18.42 0.120 169 0.71 -104 3.33
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S21|2 vs.
Frequency at 4 V, 60 mA.
MSG/MAG and
S21 (dB)
04
2814 1610 12618
30
25
20
15
10
5
0
-5
-10
MSG
MAG
S21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values
are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
11
Noise Parameter
Applications Information
Fmin values at 2 GHz and higher
are based on measurements while
the Fmins below 2 GHz have been
extrapolated. The Fmin values are
based on a set of 16 noise figure
measurements made at 16
different impedances using an
ATN NP5 test system. From these
measurements, a true Fmin is
calculated. Fmin represents the
true minimum noise figure of the
device when the device is pre-
sented with an impedance
matching network that trans-
forms the source impedance,
typically 50Ω, to an impedance
represented by the reflection
coefficient Γo. The designer must
design a matching network that
will present Γo to the device with
minimal associated circuit losses.
The noise figure of the completed
amplifier is equal to the noise
figure of the device plus the
losses of the matching network
preceding the device. The noise
figure of the device is equal to
Fmin only when the device is
presented with Γo. If the reflec-
tion coefficient of the matching
network is other than Γo, then the
noise figure of the device will be
greater than Fmin based on the
following equation.
NF = F
min
+ 4 R
n
|Γ
s
– Γ
o
| 2
Zo (|1 + Γ
o
|2)(1 – Γ
s
|2)
Where Rn/Zo is the normalized
noise resistance, Γo is the opti-
mum reflection coefficient
required to produce Fmin and Γs is
the reflection coefficient of the
source impedance actually
presented to the device. The
losses of the matching networks
are non-zero and they will also
add to the noise figure of the
device creating a higher amplifier
noise figure. The losses of the
matching networks are related to
the Q of the components and
associated printed circuit board
loss. Γo is typically fairly low at
higher frequencies and increases
as frequency is lowered. Larger
gate width devices will typically
have a lower Γo as compared to
narrower gate width devices.
Typically for FETs, the higher Γo
usually infers that an impedance
much higher than 50Ω is required
for the device to produce Fmin. At
VHF frequencies and even lower
L Band frequencies, the required
impedance can be in the vicinity
of several thousand ohms.
Matching to such a high imped-
ance requires very hi-Q compo-
nents in order to minimize circuit
losses. As an example at 900 MHz,
when airwwound coils (Q > 100)
are used for matching networks,
the loss can still be up to 0.25 dB
which will add directly to the
noise figure of the device. Using
muiltilayer molded inductors with
Qs in the 30 to 50 range results in
additional loss over the airwound
coil. Losses as high as 0.5 dB or
greater add to the typical 0.15 dB
Fmin of the device creating an
amplifier noise figure of nearly
0.65 dB. A discussion concerning
calculated and measured circuit
losses and their effect on ampli-
fier noise figure is covered in
Agilent Application 1085.
12
L=Lc L=Lb
R=Rb
L=Lb
R=Rb
L
CC=Ca C
C=Cb
LOSSYL
L=Lb
R=Rb L=La*.5
L=Ld
L
L
LOSSYL
GATE_IN SOURCE
DRAIN_OUT
R
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
R=0.1 OH LOSSYL
L=La L=Lb
R=Rb
LLOSSYL
L=Lb
R=Rb
LOSSYL
G
S
D
SOURCE
ATF-34143 SC-70 4 Lead, High Frequency Nonlinear Model
Optimized for 0.1 – 6.0 GHz
This model can be used as a
design tool. It has been tested on
MDS for various specifications.
However, for more precise and
accurate design, please refer to
the measured data in this data
sheet. For future improvements
Agilent reserves the right to
change these models without
prior notice.
NFETMESFET
G
MODEL=FET
W=800 µm
XX
D
XX
S
S
XX
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
IDS model DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Gate model RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
Parasitics GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
Breakdown FNC=01e+6
R=.17
P=.65
C=.2
Noise
Model scal factors (W=FET width in microns)
EQUATION Cds=0.01*W/200
EQUATION Beta=0.06*W/200
EQUATION Rd=200/W
EQUATION Rs=.5*200/W
EQUATION Cgs=0.2*W/200
EQUATION Cgd=0.04*W/200
EQUATION Lg=0.03*200/W
EQUATION Ld=0.03*200/W
EQUATION Ls=0.01*200/W
EQUATION Rc=500*200/W
*
STATZ MESFET MODEL
*
MODEL = FET
ATF-34143 Die Model
13
Part Number Ordering Information
No. of
Part Number Devices Container
ATF-34143-TR1 3000 7" Reel
ATF-34143-TR2 10000 13" Reel
ATF-34143-BLK 100 antistatic bag
Package Dimensions
Outline 43 (SOT-343/SC-70 4 lead)
E
D
A
A1
b TYP
e
E1
1.30 (0.051)
BSC
1.15 (.045) BSC
θ
h
C TYP
L
DIMENSIONS ARE IN MILLIMETERS (INCHES)
DIMENSIONS
MIN.
0.80 (0.031)
0 (0)
0.25 (0.010)
0.10 (0.004)
1.90 (0.075)
2.00 (0.079)
0.55 (0.022)
0.450 TYP (0.018)
1.15 (0.045)
0.10 (0.004)
0
MAX.
1.00 (0.039)
0.10 (0.004)
0.35 (0.014)
0.20 (0.008)
2.10 (0.083)
2.20 (0.087)
0.65 (0.025)
1.35 (0.053)
0.35 (0.014)
10
SYMBOL
A
A1
b
C
D
E
e
h
E1
L
θ
1.15 (.045) REF
1.30 (.051) REF
1.30 (.051)2.60 (.102)
0.55 (.021) TYP 0.85 (.033)
14
Tape Dimensions
For Outline 4T
Device Orientation
USER
FEED
DIRECTION COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
P
P
0
P
2
FW
C
D
1
D
E
A
0
8° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
5° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS W
t
1
8.00 ± 0.30
0.255 ± 0.013 0.315 ± 0.012
0.010 ± 0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS C
T
t
5.4 ± 0.10
0.062 ± 0.001 0.205 ± 0.004
0.0025 ± 0.00004
COVER TAPE
4PX 4PX 4PX 4PX
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
Obsoletes 5968-7938E
October 26, 2001
5988-4210EN
