CRCW0603215KFKTABC - VISHAY

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83535

776 Rev. 1.7, 09-Mar-10

TCDT1100, TCDT1100G

Vishay Semiconductors

Optocoupler, Phototransistor Output

DESCRIPTION

The TCDT1100, TCDT1100G series consists of a

phototransistor optically coupled to a gallium arsenide

infrared-emitting diode in a 6 pin plastic dual inline package.

The base of the phototransistor is not connected providing

noise immunity.

VDE STANDARDS

These couplers perform safety functions according to the

following equipment standards:

•DIN EN 60747-5-5 (VDE0884)

Optocoupler for electrical safety requirements

•IEC 60950/EN 60950

Office machines (applied for reinforced isolation for mains

voltage ≤ 400 VRMS)

•VDE0804

Telecommunication apparatus and data processing

•IEC 60065

Safety for mains-operated electronic and related

household apparatus

FEATURES

• Isolation test voltage 5000 VRMS

• High common mode rejection

• No base terminal connection for improved noise

immunity

• CTR offered in 4 groups

• Thickness though insulation ≥ 0.4 mm

• Creepage current resistance according to VDE0303/

IEC 60112 comparative tracking index: CTI ≥ 275

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

APPLICATIONS

• Switch-mode power supplies

• Line receiver

• Computer peripheral interface

• Microprocessor system interface

• Circuits for safe protective separation against electrical

shock according to safety class II (reinforced isolation):

- for appl. class I - IV at mains voltage ≤ 300 V

- for appl. class I - III at mains voltage ≤ 600 V

according to DIN EN 60747-5-5

AGENCY APPROVALS

• UL1577, file no. E52744, double protection

• BSI IEC 60950; IEC 60065 pending

• DIN EN 60747-5-5 (VDE0884)

•FIMKO

Note

• G = leadform 10.16 mm; G is not marked on the body.

17201_3

654

NCC E

A( +) C (–) NC

17201_4

ORDER INFORMATION

PART REMARKS

TCDT1100 CTR > 40 %, DIP-6

TCDT1101 CTR 40 % to 80 %, DIP-6

TCDT1102 CTR 63 % to 125 %, DIP-6

TCDT1103 CTR 100 % to 200 %, DIP-6

TCDT1100G CTR > 40 %, DIP-6, 400 mil

TCDT1101G CTR 40 % to 80 %, DIP-6, 400 mil

TCDT1102G CTR 63 % to 125 %, DIP-6, 400 mil

TCDT1103G CTR 100 % to 200 %, DIP-6, 400 mil

Document Number: 83535 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 1.7, 09-Mar-10 777

TCDT1100, TCDT1100G

Optocoupler, Phototransistor Output Vishay Semiconductors

Notes

(1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum

ratings for extended periods of the time can adversely affect reliability.

(2) Refer to wave profile for soldering conditions for through hole devices.

Note

(1) Minimum and maximum values are testing requierements. Typical values are characteristics of the device and are the result of engineering

evaluations. Typical values are for information only and are not part of the testing requirements.

ABSOLUTE MAXIMUM RATINGS (1) (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

INPUT

Reverse voltage VR5V

Forward current IF 60 mA

Forward surge current tp ≤ 10 µs IFSM 3A

Power dissipation Pdiss 70 mW

Junction temperature Tj125 °C

OUTPUT

Collector emitter voltage VCEO 32 V

Emitter collector voltage VECO 7V

Collector current IC50 mA

Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA

Power dissipation Pdiss 70 mW

Junction temperature Tj125 °C

COUPLER

Isolation test voltage (RMS) VISO 5000 VRMS

Total power dissipation Ptot 200 mW

Ambient temperature range Tamb - 55 to + 110 °C

Storage temperature range Tstg - 55 to + 125 °C

Soldering temperature (2) 2 mm from case, t ≤ 10 s Tsld 260 °C

ELECTRICAL CHARACTERISTCS (1) (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

INPUT

Forward voltage IF = 50 mA VF1.25 1.6 V

Junction capacitance VR = 0, f = 1 MHz Cj50 pF

OUTPUT

Collector emitter voltage IC = 1 mA VCEO 32 V

Emitter collector voltage IE = 100 µA VECO 7V

Collector ermitter cut-off current VCE = 20 V, IF = 0, E = 0 ICEO 200 nA

COUPLER

Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V

Cut-off frequency VCE = 5 V, IF = 10 mA,

RL = 100 Ωfc110 kHz

Coupling capacitance f = 1 MHz Ck0.6 pF

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83535

778 Rev. 1.7, 09-Mar-10

TCDT1100, TCDT1100G

Vishay Semiconductors Optocoupler, Phototransistor Output

Note

• According to DIN EN 60747-5-5. This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the

safety ratings shall be ensured by means of suitable protective circuits.

Fig. 1 - Test Pulse Diagram for Sample Test According to

DIN EN 60747-5-5/DIN EN 60747-; IEC60747

CURRENT TRANSFER RATIO

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

IC/IFVCE = 5 V, IF = 10 mA

TCDT1100 CTR 40 %

TCDT1100G CTR %

TCDT1101 CTR 40 80 %

TCDT1101G CTR %

TCDT1102 CTR 63 125 %

TCDT1102G CTR %

TCDT1103 CTR 100 200 %

TCDT1103G CTR %

MAXIMUM SAFETY RATINGS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

INPUT

Forward current IF130 mA

OUTPUT

Power dissipation Pdiss 265 mW

COUPLER

Rated impulse voltage VIOTM 6kV

Safety temperature Tsi 150 °C

INSULATION RATED PARAMETERS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Partial discharge test voltage -

routine test 100 %, ttest = 1 s Vpd 1.6 kV

Partial discharge test voltage -

lot test (sample test)

tTr = 60 s, ttest = 10 s,

(see figure 1)

VIOTM 6kV

Vpd 1.3 kV

Insulation resistance

VIO = 500 V RIO 1012 Ω

VIO = 500 V, Tamb = 100 °C RIO 1011 Ω

VIO = 500 V, Tamb = 150 °C

(construction test only) RIO 109Ω

13930

, t2 = 1 to 10 s

t3, t4 = 1 s

ttest = 10 s

tstres = 12 s

VIOTM

VPd

VIOWM

VIORM

ttest

tTr = 60 s tstres

t3t4

Document Number: 83535 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 1.7, 09-Mar-10 779

TCDT1100, TCDT1100G

Optocoupler, Phototransistor Output Vishay Semiconductors

Fig. 2 - Test Circuit, Non-Saturated Operation

Fig. 3 - Test Circuit, Saturated Operation

Fig. 4 - Switching Times

SWITCHING CHARACTERISTICS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Delay time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) td4µs

Rise time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) tr7µs

Fall time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) tf6.7 µs

Storage time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) ts0.3 µs

Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) ton 11 µs

Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) toff 7µs

Turn-on time VS = 5 V, IC = 10 mA, RL = 1 kΩ, (see figure 3) ton 25 µs

Turn-off time VS = 5 V, IC = 10 mA, RL = 1 kΩ, (see figure 3) toff 42.5 µs

Channel I

Channel II

95 10900

RG = 50

tp = 50 µs

T= 0.01

+ 5 V

IC = 5 mA; adjusted through

input amplitude

0IF

50 100

Oscilloscope

RL1 M

CL20 pF

Channel I

Channel II

95 10843

= 50 Ω

= 50 µs

T= 0.01

+ 5 V

50 Ω1 kΩ

= 10 mA

Oscilloscope

≥

20 pF

1 MΩ

≤

tpt

10 %

90 %

100 %

ton

tstf

toff

tpPulse duration

tdDelay time

trRise time

ton (= td + tr) Turn-on time

tsStorage time

tfFall time

toff (= ts + tf)Turn-off time

96 11698

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83535

780 Rev. 1.7, 09-Mar-10

TCDT1100, TCDT1100G

Vishay Semiconductors Optocoupler, Phototransistor Output

PACKAGE DIMENSIONS in millimeters

DIP-6

DIP-6, 400 mil

PACKAGE MARKING

14771_2

7.12 ± 0.3

0.25

6.5 ± 0.3

1.2 ± 0.1

3.5 ± 0.3

7.62 typ.

0.5 ± 0.1

4.5 ± 0.3

2.8 ± 0.15

4.5 ± 0.3

1 2 3

6 5 4 7.62 to 10.3

14771_1

7.12

± 0.3

0.25

6.5

± 0.3

1.2

± 0.1

3.5 ± 0.3

10.16 (typ.)

7.62 typ.

0.5 ± 0.1

4.5 ± 0.3

2.8 ± 0.15

4.5

± 0.3

1 2 3

6 5 4

21764-52

TCDT1100

V YWW 24

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Revision: 08-Feb-17 1Document Number: 91000

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