IL715/IL716/IL717
IsoLoop is a registered trademark of NVE Corporation.
*U.S. Patent numbers 5,831,426; 6,300,617 and others.
REV. R
NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344-3617 Phone: (952) 829-9217 Fax: (952) 829-9189 www.IsoLoop.com ©NVE Corporation
High Speed/High Temperature Four-Channel Digital Isolators
Functional Diagrams
IL715
IL716
IL717
IN
1
IN
2
OUT
3
OUT
4
OUT
1
OUT
2
IN
3
IN
4
OUT
1
OUT
2
OUT
3
IN
4
OUT
1
OUT
2
OUT
3
OUT
4
IN
1
IN
2
IN
3
IN
4
IN
1
IN
2
IN
3
OUT
4
Features
• +5 V / +3.3 V CMOS/TTL Compatible
• High Speed: 110 Mbps
• High Temperature: −40°C to +125°C (IL715T/IL716T/IL717T)
• 2500 VRMS Isolation (1 min.)
• 2 ns Typical Pulse Width Distortion
• 100 ps Typical Pulse Jitter
• 4 ns Typical Propagation Delay Skew
• 10 ns Typical Propagation Delay
• 30 kV/µs Typical Common Mode Rejection
• Low EMC Footprint
• 2 ns Channel-to-Channel Skew
• 0.3" and 0.15" 16-pin SOIC Packages
• UL1577 and IEC 61010-2001 Approved
Applications
• ADCs and DACs
• Digital Fieldbus
• RS-485 and RS-422
• Multiplexed Data Transmission
• Data Interfaces
• Board-to-Board Communication
• Digital Noise Reduction
• Operator Interface
• Ground Loop Elimination
• Peripheral Interfaces
• Parallel Bus
• Logic Level Shifting
Description
NVE’s IL715, IL716, and IL717 four-channel high-speed digital isolators
are CMOS devices manufactured with NVE’s patented* IsoLoop®spintronic
Giant Magnetoresistive (GMR) technology.
All transmit and receive channels operate at 110 Mbps over the full
temperature and supply voltage range. The symmetric magnetic coupling
barrier provides a typical propagation delay of only 10 ns and a pulse width
distortion of 2 ns, achieving the best specifications of any isolator. Typical
transient immunity of 30 kV/µs is unsurpassed. Available in 0.15" SOIC
packages, the four-channel devices provide the highest channel density
available.
Typical transient immunity of 30 kV/µs is unsurpassed. High channel
density makes these devices ideal for isolating ADCs and DACs, parallel
buses and peripheral interfaces.
The IL715, IL716, and IL717 are available in 0.3" and 0.15" 16-pin SOIC
packages and performance is specified over the temperature range of −40°C
to +100°C without derating. The IL715T, IL716T, and IL717T are specified
over −40°C to +125°C; the widest temperature range digital couplers
available.
IL715/IL716/IL717
2
Absolute Maximum Ratings
Parameters Symbol Min. Typ. Max. Units Test Conditions
Storage Temperature TS −55 150 °C
Ambient Operating Temperature(1)
IL715T, IL716T, and IL717T TA −55 125
135 °C
Supply Voltage VDD1, VDD2 −0.5 7 V
Input Voltage VI −0.5 VDD+0.5 V
Output Voltage VO −0.5 VDD+0.5 V
Output Current Drive IO 10 mA
Lead Solder Temperature 260 °C 10 sec.
ESD 2 kV HBM
Recommended Operating Conditions
Parameters Symbol Min. Typ. Max. Units Test Conditions
Ambient Operating Temperature
IL715, IL716, and IL717
IL715T, IL716T, and IL717T
TA
TA
−40
−40
100
125
°C
°C
Supply Voltage VDD1, VDD2 3.0 5.5 V
Logic High Input Voltage VIH 2.4 VDD V
Logic Low Input Voltage VIL 0 0.8 V
Input Signal Rise and Fall Times tIR, tIF 1 µs
Insulation Specifications
Parameters Symbol Min. Typ. Max. Units Test Conditions
Creepage Distance
0.15" SOIC 4.03 mm
0.3" SOIC 8.08 mm
Leakage Current(5) 0.2 µA 240 VRMS, 60 Hz
Barrier Impedance(5) >1014||3 Ω || pF
Package Characteristics
Parameters Symbol Min. Typ. Max. Units Test Conditions
Capacitance (Input–Output)(5) C
I–O 4 pF f = 1 MHz
Thermal Resistance
0.15" SOIC θJC 41 °C/W
0.3" SOIC θJC 28 °C/W
Thermocouple at center
underside of package
Package Power Dissipation PPD 150 mW f = 1 MHz, VDD = 5 V
Safety and Approvals
IEC61010-1
TUV Certificate Numbers: N1502812, N1502812-101
Classification as Reinforced Insulation
Model Package
Pollution
Degree Material
Group Max. Working
Voltage
IL715, IL716, and IL717 0.3" SOIC II III 300 VRMS
IL715-3, IL716-3, and IL717-3 0.15" SOIC II III 150 VRMS
UL 1577
Component Recognition Program File Number: E207481
Rated 2500VRMS for 1 minute
Soldering Profile
Per JEDEC J-STD-020C, MSL=2
IL715/IL716/IL717
3
IL715 Pin Connections
1 VDD1 Supply voltage
2 GND1 Ground return for VDD1
3 IN1 Data in, channel 1
4 IN2 Data in, channel 2
5 IN3 Data in, channel 3
6 IN4 Data in, channel 4
7 NC No connection
8 GND1 Ground return for VDD1
9 GND2 Ground return for VDD2
10 NC No connection
11 OUT4 Data out, channel 4
12 OUT3 Data out, channel 3
13 OUT2 Data out, channel 2
14 OUT1 Data out, channel 1
15 GND2 Ground return for VDD2
16 VDD2 Supply voltage
V
DD1
GND
1
GND
2
OUT
2
OUT
3
OUT
1
IN
1
IN
2
IN
3
V
DD2
IN
4
NC NC
OUT
4
GND
1
GND
2
IL715
IL716 Pin Connections
1 VDD1 Supply voltage
2 GND1 Ground Return for VDD1
3 IN1 Data in, channel 1
4 IN2 Data in, channel 2
5 OUT3 Data out, channel 3
6 OUT4 Data out, channel 4
7 NC No connection
8 GND1 Ground Return for VDD1
9 GND2 Ground Return for VDD2
10 NC No connection
11 IN4 Data in, channel 4
12 IN3 Data in, channel 3
13 OUT2 Data out, channel 2
14 OUT1 Data out, channel 1
15 GND2 Ground Return for VDD2
16 VDD2 Supply voltage
VDD1
GND1GND2
OUT2
OUT3
OUT1
IN1
IN2
IN3
VDD2
IN4
NC NC
OUT4
GND1GND2
IL716
IL715/IL716/IL717
4
IL717 Pin Connections
1 VDD1 Supply voltage
2 GND1 Ground return for VDD1
3 IN1 Data in, channel 1
4 IN2 Data in, channel 2
5 IN3 Data in, channel 3
6 OUT4 Data out, channel 4
7 NC No connection
8 GND1 Ground return for VDD1
9 GND2 Ground return for VDD2
10 NC No connection
11 IN4 Data in, channel 4
12 OUT3 Data out, channel 3
13 OUT2 Data out, channel 2
14 OUT1 Data out, channel 1
15 GND2 Ground return for VDD2
16 VDD2 Supply voltage
VDD1
GND1GND2
OUT2
OUT3
OUT1
IN1
IN2
IN3
VDD2
IN4
NC NC
OUT4
GND1GND2
IL717
Timing Diagram
Legend
tPLH Propagation Delay, Low to High
tPHL Propagation Delay, High to Low
tPW Minimum Pulse Width
tR Rise Time
tF Fall Time
IL715/IL716/IL717
5
3.3 Volt Electrical Specifications
Electrical specifications are Tmin to Tmax unless otherwise stated.
Parameters Symbol Min. Typ. Max. Units Test Conditions
DC Specifications
Input Quiescent Supply Current
IL715 16 20 µA
IL716 3.3 4 mA
IL717 IDD1
1.5 2 mA
Output Quiescent Supply Current
IL715 5.5 8 mA
IL716 3.3 4 mA
IL717 IDD2
3 6 mA
Logic Input Current II −10 10 µA
VDD − 0.1 VDD I
O = −20 µA, VI = VIH
Logic High Output Voltage VOH 0.8 x VDD 0.9 x VDD V IO = −4 mA, VI = VIH
0 0.1 IO = 20 µA, VI = VIL
Logic Low Output Voltage VOL 0.5 0.8 V IO = 4 mA, VI = VIL
Switching Specifications
Maximum Data Ra t e 100 110 Mbps CL = 15 pF
Pulse Width(7) PW 10 ns 50% Points, VO
Propagation Delay Input to Output
(High to Low) tPHL 12 18 ns CL = 15 pF
Propagation Delay Input to Output
(Low to High) tPLH 12 18 ns CL = 15 pF
Pulse Width Distortion (2) PWD 2 3 ns CL = 15 pF
Propagation Delay Skew (3) t
PSK 4 6 ns CL = 15 pF
Output Rise Time (10%−90%) tR 2 4 ns CL = 15 pF
Output Fall Time (10%−90%) tF 2 4 ns CL = 15 pF
Common Mode Transient Immunity
(Output Logic High or Logic Low)(4) |CMH|,|CML| 20 30 kV/µs VCM = 300 V
Channel-to-Channel Skew tCSK 2 3 ns CL = 15 pF
Dynamic Power Consumption(6) 140 240 μA/MHz per channel
Magnetic Field Immunity(8) (VDD2= 3V, 3V<VDD1<5.5V)
Power Frequency Magnetic Immunity HPF 1000 1500 A/m 50Hz/60Hz
Pulse Magnetic Field Immunity HPM 1800 2000 A/m tp = 8µs
Damped Oscillatory Magnetic Field HOSC 1800 2000 A/m 0.1Hz – 1MHz
Cross-axis Immunity Multiplier(9) K
X 2.5
IL715/IL716/IL717
6
5 Volt Electrical Specifications
Electrical specifications are Tmin to Tmax unless otherwise stated.
Parameters Symbol Min. Typ. Max. Units Test Conditions
DC Specifications
Input Quiescent Supply Current
IL715 24 30 µA
IL716 5 6 mA
IL717 IDD1
2 3 mA
Output Quiescent Supply Current
IL715 8 12 mA
IL716 5 6 mA
IL717 IDD2
6 9 mA
Logic Input Current II −10 10 µA
VDD − 0.1 VDD I
O = −20 µA, VI = VIH
Logic High Output Voltage VOH 0.8 x VDD 0.9 x VDD V IO = −4 mA, VI = VIH
0 0.1 IO = 20 µA, VI = VIL
Logic Low Output Voltage VOL 0.5 0.8 V IO = 4 mA, VI = VIL
Switching Specifications
Maximum Data Ra t e 100 110 Mbps CL = 15 pF
Pulse Width(7) PW 10 ns 50% Points, VO
Propagation Delay Input to Output
(High to Low) tPHL 10 15 ns CL = 15 pF
Propagation Delay Input to Output
(Low to High) tPLH 10 15 ns CL = 15 pF
Pulse Width Distortion(2) PWD 2 3 CL = 15 pF
Pulse Jitter(10) t
J 100 ps CL = 15 pF
Propagation Delay Skew(3) t
PSK 4 6 ns CL = 15 pF
Output Rise Time (10%−90%) tR 1 3 ns CL = 15 pF
Output Fall Time (10%−90%) tF 1 3 ns CL = 15 pF
Common Mode Transient Immunity
(Output Logic High or Logic Low)(4) |CMH|,|CML| 20 30 kV/µs Vcm = 300 V
Channel-to-Channel Skew tCSK 2 3 ns CL = 15 pF
Dynamic Power Consumption(6) 200 340 μA/MHz per channel
Magnetic Field Immunity(8) (VDD2= 5V, 3V<VDD1<5.5V)
Power Frequency Magnetic Immunity HPF 2800 3500 A/m 50Hz/60Hz
Pulse Magnetic Field Immunity HPM 4000 4500 A/m tp = 8µs
Damped Oscillatory Magnetic Field HOSC 4000 4500 A/m 0.1Hz – 1MHz
Cross-axis Immunity Multiplier(9) K
X 2.5
Notes (apply to both 3.3 V and 5 V specifications):
1. Absolute maximum ambient operating temperature means the device will not be damaged if operated under these conditions. It does not
guarantee performance.
2. PWD is defined as |tPHL − tPLH|. %PWD is equal to PWD divided by pulse width.
3. tPSK is the magnitude of the worst-case difference in tPHL and/or tPLH between devices at 25°C.
4. CMH is the maximum common mode voltage slew rate that can be sustained while maintaining VO > 0.8 VDD2. CML is the maximum
common mode input voltage that can be sustained while maintaining VO < 0.8 V. The common mode voltage slew rates apply to both rising
and falling common mode voltage edges.
5. Device is considered a two terminal device: pins 1–8 shorted and pins 9–16 shorted.
6. Dynamic power consumption is calculated per channel and is supplied by the channel’s input side power supply.
7. Minimum pulse width is the minimum value at which specified PWD is guaranteed.
8. The relevant test and measurement methods are given in the Electromagnetic Compatibility section on p. 7.
9. External magnetic field imm unity is improved by this factor if the field direction is “end-to-end” rather than to “pin-to-pin” (see diagram on p. 7).
10. 65,535-bit pseudo-random binary signal (PRBS) NRZ bit pattern with no more than five consecutive 1s or 0s; 800 ps transition time.
IL715/IL716/IL717
7
80 ns
Application Information
Electrostatic Discharge Sensitivity
This product has been tested for electrostatic sensitivity to the
limits stated in the specifications. However, NVE recommends that
all integrated circuits be handled with appropriate care to avoid
damage. Damage caused by inappropriate handling or storage could
range from performance degradation to complete failure.
Electromagnetic Compatibility
IsoLoop Isolators have the lowest EMC footprint of any isolation
technology. IsoLoop Isolators’ Wheatstone bridge configuration
and differential magnetic field signaling ensure excellent EMC
performance against all relevant standards.
These isolators are fully compliant with generic EMC standards
EN50081, EN50082-1 and the umbrella line-voltage standard for
Information Technology Equipment (ITE) EN61000. NVE has
completed compliance tests in the categories below:
EN50081-1
Residential, Commercial & Light Industrial
Methods EN55022, EN55014
EN50082-2: Industrial Environment
Methods EN61000-4-2 (ESD), EN61000-4-3 (Electromagnetic
Field Immunity), EN61000-4-4 (Electrical Transient Immunity),
EN61000-4-6 (RFI Immunity), EN61000-4-8 (Power Frequency
Magnetic Field Immunity), EN61000-4-9 (Pulsed Magnetic
Field), EN61000-4-10 (Damped Oscillatory Magnetic Field)
ENV50204
Radiated Field from Digital Telephones (Immunity Test)
Immunity to external magnetic fields is even higher if the field
direction is “end-to-end” rather than to “pin-to-pin” as shown in the
diagram below: Cross-axis Field Direction
Dynamic Power Consumption
IsoLoop Isolators achieve their low power consumption from the
way they transmit data across the isolation barrier. By detecting the
edge transitions of the input logic signal and converting these to
narrow current pulses, a magnetic field is created around the GMR
Wheatstone bridge. Depending on the direction of the magnetic
field, the bridge causes the output comparator to switch following
the input logic signal. Since the current pulses are narrow, about
2.5 ns, the power consumption is independent of mark-to-space
ratio and solely dependent on frequency. This has obvious
advantages over optocouplers, which have power consumption
heavily dependent on mark-to-space ratio.
Power Supply Decoupling
Both power supplies to these devices should be decoupled with low
ESR 47 nF ceramic capacitors. Ground planes for both GND1 and
GND2 are highly recommended for data rates above 10 Mbps.
Capacitors must be located as close as possible to the VDD pins.
Signal Status on Start-up and Shut Down
To minimize power dissipation, input signals are differentiated and
then latched on the output side of the isolation barrier to reconstruct
the signal. This could result in an ambiguous output state
depending on power up, shutdown and power loss sequencing.
Therefore, the designer should consider including an initialization
signal in the start-up circuit. Initialization consists of toggling the
input either high then low, or low then high.
Data Transmission Rates
The reliability of a transmission system is directly related to the
accuracy and quality of the transmitted digital information. For a
digital system, those parameters which determine the limits of the
data transmission are pulse width distortion and propagation delay
skew.
Propagation delay is the time taken for the signal to travel through
the device. This is usually different when sending a low-to-high
than when sending a high-to-low signal. This difference, or error, is
called pulse width distortion (PWD) and is usually in nanoseconds.
It may also be expressed as a percentage:
PWD% = Maximum Pulse Width Distortion (ns) x 100%
Signal Pulse Width (ns)
For example, with data rates of 12.5 Mbps:
PWD% = 3 ns x 100% = 3.75%
This figure is almost three times better than any available
optocoupler with the same temperature range, and two times better
than any optocoupler regardless of published temperature range.
IsoLoop isolators exceed the 10% maximum PWD recommended
by PROFIBUS, and will run to nearly 35 Mb within the 10% limit.
Propagation delay skew is the signal propagation difference
between two or more channels. This becomes significant in clocked
systems because it is undesirable for the clock pulse to arrive
before the data has settled. Short propagation delay skew is
therefore especially critical in high data rate parallel systems for
establishing and maintaining accuracy and repeatability. Worst-
case channel-to-channel skew in an IL700 Isolator is only 3 ns,
which is ten times better than any optocoupler. IL700 Isolators
have a maximum propagation delay skew of 6 ns, which is five
times better than any optocoupler.
IL715/IL716/IL717
8
Application Diagrams
Isolated Logic Level Shifters
CS
CLK
DI
DO
Sensor ADC
IL717
Controller
+5V +3.3V
GND 1 GND 2
Single-Channel Isolated Delta-Sigma A/D Converter
Bridge +
Serial Data Out
Serial Data In
Data Clock
Chip Select
Iso SD Out
Iso SD In
Iso Data Clock
Iso CS
Bridge -
OSC 2
IL717
CS5532
Clock
Generator
Bridge
Bias
Delta Sigma A/D
Isolation
Boundary
This circuit illustrates a typical single-channel delta-sigma ADC. The A/D is located on the bridge with no signal conditioning electronics
between the bridge sensor and the ADC. In this case, the IL717 is the best choice for isolation. It isolates the control bus from the
microcontroller. The system clock is located on the isolated side of the system.
IL715/IL716/IL717
9
Package Drawings, Dimensions and Specifications
0.15" SOIC Package
0.054 (1.4)
0.072 (1.8)
0.040 (1.0)
0.060 (1.5)
0.016 (0.4)
0.050 (1.3)
0.386 (9.8)
0.394 (10.0)
Pin 1 identified
by either an
indent or a
marked dot
NOM
0.228 (5.8)
0.244 (6.2)
0.152 (3.86)
0.157 (3.99)
Dimensions in inches (mm)
0.007 (0.2)
0.013 (0.3)
0.004 (0.1)
0.012 (0.3)
0.040 (1.02)
0.050 (1.27)
0.013 (0.3)
0.020 (0.5)
Pin spacing is a BASIC
dimension; tolerances
do not accumulate
NOTE:
0.3" SOIC Package
NOM
Pin 1 identified by
either an indent
or a marked dot
0.287 (7.29)
0.300 (7.62)
Dimensions in inches (mm)
0.08 (2.0)
0.10 (2.5)
0.092 (2.34)
0.105 (2.67)
0.397 (10.1)
0.413 (10.5)
0.013 (0.3)
0.020 (0.5)
0.394 (10.00)
0.419 (10.64)
0.040 (1.0)
0.060 (1.5) 0.004 (0.1)
0.012 (0.3)
0.007 (0.2)
0.013 (0.3) 0.016 (0.4)
0.050 (1.3)
Pin spacing is a BASIC
dimension; tolerances
do not accumulate
NOTE:
IL715/IL716/IL717
10
Ordering Information and Valid Part Numbers
IL 716 T - 3 E TR13
Bulk Packaging
Blank = Tube
TR7 = 7'' Tape and Reel
TR13 = 13'' Tape and Reel
Package
Blank= 80/20 Tin/Lead Plating
E = RoHS Compliant
Package T ype
Blank = 0.30'' 16-pin SOIC
-3 = 0.15'' 16-pin SOIC
Grade
Blank = Standard
T = High Temperature
Base Part Number
715 = 4 Drive Channels
716 = 2 Drive Channels
2 Receive Channels
717 = 3 Drive Channels
1 Receive Channel
Product Family
IL = Isolators
Valid Part Numbers
IL715
IL715E
IL715-3
IL715-3E
IL715T
IL715TE
IL715T-3
IL715T-3E
All IL715, IL716, and IL717 part types are
available on tape and reel.
IL716
IL716E
IL716-3
IL716-3E
IL716T
IL716TE
IL716T-3
IL716T-3E
IL717
IL717E
IL717-3
IL717-3E
IL717T
IL717TE
IL717T-3
IL717T-3E
RoHS
COMPLIANT
IL715/IL716/IL717
11
ISB-DS-001-IL715/6/7-R
November 2009
Changes
• Added typical jitter specification at 5V.
ISB-DS-001-IL715/6/7-Q
Changes
• Added EMC details.
ISB-DS-001-IL715/6/7-P
Changes
• Added magnetic field immunity and electromagnetic compatibility specifications.
• Added notes on package drawings that pin-spacing tolerances are non-accumulating.
ISB-DS-001-IL715/6/7-O
Changes
• Changed ordering information to reflect that devices are now fully RoHS compliant
with no exemptions.
ISB-DS-001-IL715/6/7-N
Changes
• Eliminated solderin g profile chart
ISB-DS-001-IL715/6/7-M
Changes
• Package drawings updated
ISB-DS-001-IL715/6/7-L Changes
• T-Grades added
• Package drawings updated
• Order information updated
ISB-DS-001-IL715/6/7-K Changes
• Update UL and IEC approvals
• Package characteristics added
ISB-DS-001-IL715/6/7-J Changes
• Revision letter added.
• Storage temperature changed from 175°C max. to 150°C max.
• Lead soldering temperature changed from 180°C max. to 260°C max.
• IEC 61010-1 Classification: “Reinforced Insulation” added.
• Dynamic Power Consumption: units corrected from mA/mHz to mA/MHz.
• Ordering Information. 5 Volt only option removed.
The following valid part numbers removed.
IL715B, IL715-3B, IL715BE, IL715-3BE
IL716B, IL716-3B, IL716BE, IL716-3BE
IL717B, IL717-3B, IL717BE, IL717-3BE
IL715/IL716/IL717
12
About NVE
An ISO 9001 Certified Company
NVE Corporation is a high technology components manufacturer having the unique capability to combine spintronic Giant Magnetoresistive
(GMR) materials with integrated circuits to make high performance electronic components. Products include Magnetic Field Sensors, Magnetic
Field Gradient Sensors (Gradiometer), Digital Magnetic Field Sensors, Digital Signal Isolators and Isolated Bus Transceivers.
NVE is a leader in GMR research and in 1994 introduced the world’s first products using GMR material, a line of GMR magnetic field sensors
that can be used for position, magnetic media, wheel speed and current sensing.
NVE is located in Eden Prairie, Minnesota, a suburb of Minneapolis. Please visit our Web site at www.nve.com or call
(952) 829-9217 for information on products, sales or distribution.
NVE Corporation
11409 Valley View Road
Eden Prairie, MN 55344-3617 USA
Telephone: (952) 829-9217
Fax: (952) 829-9189
Internet: www.nve.com
e-mail: isoinfo@nve.com
The information provided by NVE Corporation is believed to be accurate. However, no responsibility is assumed by NVE Corporation for its use,
nor for any infringement of patents, nor rights or licenses granted to third parties, which may result from its use. No license is granted by
implication, or otherwise, under any patent or patent rights of NVE Corporation. NVE Corporation does not authorize, nor warrant, any NVE
Corporation product for use in life support devices or systems or other critical applications without the express written approval of the President
of NVE Corporation.
Specifications shown are subject to change without notice.
ISB-DS-001-IL715/6/7-R
November 2009
