SILICON PNP EPITAXIAL TYPE FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: * Low Leakage Current Topyt-l0Ona (Max.) , Tppy7l0Ond (Max. ) @ Vop=-35V, Vprq0.4v * Excellent DC Current Gain Linearity * Low Saturation Voltage : Vor(sat)770-4V Max.) @ Io=-150mA , Ig=-15mA * Low Collector Output Capacitance : Cop=8-5pF (Max.) @ Vop=-LOV - Complementary to YTS4401 MAXIMUM RATINGS (Ta=25C) YTS4403 Unit in mm 48 os #1 x nx o Oo a ft HH) oo a oF 1 1 3| cars Ro 5 | +1 +1 4 3 4 i a al 5 i 1. EMITTER 2. BASE 3. COLLECTOR JEDEC _ EILAJ sc-59 TOSHIBA 2-S3FLA Weight: 0.012g CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Vero -40 Vv Collector-Emitter Voltage Vero -40 v Emitter-Base Voltage VeRO -5 V Collector Current | tc ___ 7600 mA Base Current I -100 mA Collector Power Dissipation Pe 200 mW (Ta=25C) Derate Linearly 25C 1.6 mW/C mem: Rests aencem] 923. [se Junction Temperature Ty : 150 c Storage Temperature Range Tstg -55% 150 C Marking 1115 Type Name AU-7 7YTS4403 ELECTRICAL CHARACTERISTICS (Ta=25C) 20us CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT. Collector Cut-off Current ICEV VcE=-35V, VBE=0.4V - - -100 nA Base Cut-off Current IBEV VcE=-35V, VBE=0.4V - ~ 100 nA Breakdown Voltage V(pr)cBo |Ic=-O.lmA, Ig=0 a - Vv Breakdown Voltage V(BR)CEO |1C=-1mA, Ip=0 40 | - - V Emitter-Base Breakdown Voltage V(BR)EBO |Ig=-0.1mA, I=0 5 ~ ~ V hFE(1) |VCE=-1V, Ic=-0.1mA 30 - - hFE(2) {VCE=-1V, Ic=-1mA 60 = = DC Current Gain hFE(3) |VcE=-1V, Ic=-10mA 100 ~ - hpe(4) |Vce="1V, Ic=-150mA 100 | - | 300 hre(5) |Vce=-2V, Ic=-500mA 20 - 7 Collector-Emitter VcE(sat)1]Ic=-150mA, 1p=-15mA - - -0.4 Saturation Voltage VCE(sat)2]Ic=-500mA, Ip=-50mA _ - |-0.75 V Base-Emitter VBE(sat) 1] Ic=-150mA, Ip=-15mA -0.75| - |-0.95 Saturation Voltage VBE(sat)2] Ic=-500mA, Ip=-50mA - - 1|-1.3 v Transition Frequency fT roe ane Te="20mA 200 - - MHz Collector Output Capacitance Cob VcB=-10V, IE=0, f=1MHz - - 8.5 pF Input Capacitance Cib Vep=-0.5V, Ic=0, f=LMHz - - 30 pF Input Impedance hie 1.5 - 15 k2 Voltage Feedback Ratio hre Vcg=-1l0V, Ic=-imA 0.1 - 8 |x10-4 Small-Signal Current Gain hfe f=1kHz 60 - 500 Collector Output Admittance hoe 1.0 - 100 us Vin ovat T Vout Delay Time td 8 2 Chota <lOpF - - 15 | be tr(scope)<4n8 av Voo=- 30V _ LP econ Rise Time tr 26 bused - - 20 Switching Time ns . Vi a. | T Vout Storage Time tstg n g F Stotal <1 OPF - - 225 Vpp=4 oe rdggope) Stee : avy 20ns Fall Time te etl ne cog - - 30 111613. Individual Technical Data 13.2 Diodes IOIITEPTUTRUPVUTORATTERTTUUAUTETUET UTES UT TTT TE