BAS19/BAS20 Taiwan Semiconductor 200mA, 100-150V Surface Mount Fast Switching Diode FEATURES KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 200 mA VRRM 100-150 V VF at IF=200mA 1.25 V TJ MAX 150 C APPLICATIONS Package SOT-23 Configuration Single die Switching mode power supply (SMPS) MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 0.5 mg (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER Marking code on the device SYMBOL Repetitive peak reverse voltage VRRM PD IF Power dissipation Forward current BAS19 BAS20 JP JR 100 150 UNIT 250 200 V mW mA Junction temperature range TJ -65 to +150 C Storage temperature range TSTG -65 to +150 C 1 Version: C2001 BAS19/BAS20 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction to ambient thermal resistance SYMBOL TYP UNIT RJA 500 C/W ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) IF = 100mA, TJ = 25C IF = 200mA, TJ = 25C BAS19 Reverse voltage BAS20 BAS19 Reverse current (2) BAS20 Junction capacitance SYMBOL MIN VF - IR = 100 A, TJ = 25C IR = 100 A, 100 MAX UNIT 1.00 1.25 V - VR V 150 - IR - 0.1 A CJ - 5 pF trr - 50 ns TJ = 25C VR = 100 V, TJ = 25C VR = 150 V, TJ = 25C f=1 MHz, VR=0V IF=IR= 30mA, IRR= 0.1 x IR Reverse recovery time Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING BASxx RF SOT-23 3K / 7" Reel BASxx RFG SOT-23 3K / 7" Reel BASxx R5 SOT-23 10K / 13" Reel BASxx R5G SOT-23 10K / 13" Reel BASxx-B0 RF SOT-23 3K / 7" Reel BASxx-B0 RFG SOT-23 3K / 7" Reel BASxx-B0 R5 SOT-23 10K / 13" Reel BASxx-B0 R5G SOT-23 10K / 13" Reel Notes: 1. "xx" is device code from "19" to "20" 2. "G" means green compound (halogen free) 2 Version: C2001 BAS19/BAS20 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.1 Forward Characteristics Fig.2 Leakage Current VS. Junction temperature 100 100 Leakage Current (A) Instantaneous Forward Current (mA) 1000 10 1 0.1 0.01 10 1 0.1 0.01 0 1 2 0 100 200 Junction Temperature (oC) Instantaneous Forward Voltage (V) 3 Version: C2001 BAS19/BAS20 Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOT-23 SUGGESTED PAD LAYOUT 4 Version: C2001 BAS19/BAS20 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers' products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: C2001