BAS19/BAS20
Taiwan Semiconductor
1 Version: C2001
200mA, 100-150V Surface Mount Fast Switching Diode
FEATURES
● Low power loss, high efficiency
● Ideal for automated placement
● High surge current capability
● Moisture sensitivity level: level 1, per J-STD-020
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
MECHANICAL DATA
● Case: SOT-23
● Molding compound meets UL 94 V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Weight: 8± 0.5 mg (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
IF 200 mA
VRRM 100-150 V
VF at IF=200mA 1.25 V
TJ MAX 150 °C
Package SOT-23
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
BAS19
BAS20
UNIT
Marking code on the device JP JR
Repetitive peak reverse voltage VRRM 100 150 V
Power dissipation PD 250 mW
Forward current IF 200 mA
Junction temperature range TJ -65 to +150 °C
Storage temperature range TSTG -65 to +150 °C
BAS19/BAS20
Taiwan Semiconductor
2 Version: C2001
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction to ambient thermal resistance RӨJA 500 °C/W
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL MIN MAX UNIT
Forward voltage (1) IF = 100mA, TJ = 25°C VF - 1.00
V
IF = 200mA, TJ = 25°C 1.25
Reverse voltage
BAS19 IR = 100 μA,
TJ = 25°C VR
100 -
V
BAS20 IR = 100 μA,
TJ = 25°C 150 -
Reverse current (2)
BAS19 VR = 100 V,
TJ = 25°C IR - 0.1 μA
BAS20 VR = 150 V,
TJ = 25°C
Junction capacitance f=1 MHz, VR=0V CJ - 5 pF
Reverse recovery time IF=IR= 30mA, IRR= 0.1 x IR trr - 50 ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
INFORMATION
ORDERING CODE PACKAGE PACKING
BASxx RF SOT-23 3K / 7" Reel
BASxx RFG SOT-23 3K / 7" Reel
BASxx R5 SOT-23 10K / 13" Reel
BASxx R5G SOT-23 10K / 13" Reel
BASxx-B0 RF SOT-23 3K / 7" Reel
BASxx-B0 RFG SOT-23 3K / 7" Reel
BASxx-B0 R5 SOT-23 10K / 13" Reel
BASxx-B0 R5G SOT-23 10K / 13" Reel
Notes:
1. "xx" is device code from "19" to "20"
2. “G” means green compound (halogen free)
BAS19/BAS20
Taiwan Semiconductor
3 Version: C2001
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Characteristics
Fig.2 Leakage Current VS. Junction temperature
0.01
0.1
1
10
100
1000
012
Instantaneous Forward Current (mA)
Instantaneous Forward Voltage (V)
0.01
0.1
1
10
100
0 100 200
Leakage Current (μA)
Junction Temperature (oC)
BAS19/BAS20
Taiwan Semiconductor
4 Version: C2001
PACKAGE OUTLINE DIMENSION
SOT-23
SUGGESTED PAD LAYOUT
BAS19/BAS20
Taiwan Semiconductor
5 Version: C2001
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