TSHA520.
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96 1 (6)
GaAlAs Infrared Emitting Diodes in ø5 mm (T–1
¾
) Package
Description
The TSHA520. series are high efficiency infrared emit-
ting diodes in GaAlAs on GaAlAs technology, molded in
a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs technol-
ogy these high intensity emitters feature about 70 %
radiant power improvement.
Features
D
Extra high radiant power and radiant intensity
D
Suitable for high pulse current operation
D
Standard T–1
¾
(ø 5 mm) package
D
Angle of half intensity ϕ = ± 12
°
D
Peak wavelength
l
p = 875 nm
D
High reliability
D
Good spectral matching to Si photodetectors
94 8390
Applications
Infrared remote control and free air transmission systems with high power and long transmission distance requirements
in combination with PIN photodiodes or phototransistors.
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable
for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
Tamb = 25
_
C
Parameter Test Conditions Symbol Value Unit
Reverse Voltage VR5 V
Forward Current IF100 mA
Peak Forward Current tp/T=0.5, tp=100
m
s IFM 200 mA
Surge Forward Current tp=100
m
s IFSM 2.5 A
Power Dissipation PV210 mW
Junction Temperature Tj100
°
C
Operating Temperature Range Tamb –55...+100
°
C
Storage Temperature Range Tstg –55...+100
°
C
Soldering Temperature t
x
5sec, 2 mm from case Tsd 260
°
C
Thermal Resistance Junction/Ambient RthJA 350 K/W
TSHA520.
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96
2 (6)
Basic Characteristics
Tamb = 25
_
C
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms VF1.5 1.8 V
Temp. Coefficient of VFIF = 100mA TKVF –1.6 mV/K
Reverse Current VR = 5 V IR100
m
A
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 Cj20 pF
Temp. Coefficient of
f
eIF = 20 mA TK
f
e–0.7 %/K
Angle of Half Intensity ϕ±12 deg
Peak Wavelength IF = 100 mA
l
p875 nm
Spectral Bandwidth IF = 100 mA
Dl
80 nm
Temp. Coefficient of
l
pIF = 100 mA TK
l
p0.2 nm/K
Rise Time IF = 100 mA tr600 ns
IF = 1.5 A tr300 ns
Fall Time IF = 100 mA tf600 ns
IF = 1.5 A tf300 ns
Type Dedicated Characteristics
Tamb = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward Voltage IF=1.5A, tp=100
m
sTSHA5200/5201 VF3.2 4.9 V
g
F,p
m
TSHA5202/5203 VF3.2 4.5 V
Radiant Intensity IF=100mA, tp=20ms TSHA5200 Ie25 40 mW/sr
y
F,p
TSHA5201 Ie30 50 mW/sr
TSHA5202 Ie36 60 mW/sr
TSHA5203 Ie50 65 mW/sr
Radiant Intensity IF=1.5A, tp=100
m
sTSHA5200 Ie300 500 mW/sr
y
F,p
m
TSHA5201 Ie400 600 mW/sr
TSHA5202 Ie500 700 mW/sr
TSHA5203 Ie600 800 mW/sr
Radiant Power IF=100mA, tp=20ms TSHA5200
f
e22 mW
F,p
TSHA5201
f
e23 mW
TSHA5202
f
e24 mW
TSHA5203
f
e25 mW
TSHA520.
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96 3 (6)
Typical Characteristics (Tamb = 25
_
C unless otherwise specified)
020406080
0
50
100
150
200
250
P – Power Dissipation ( mW )
V
Tamb – Ambient Temperature ( °C )
100
94 7957 e
RthJA
Figure 1. Power Dissipation vs. Ambient Temperature
020406080
0
25
50
75
100
125
I – Forward Current ( mA )
F
Tamb – Ambient Temperature ( °C )
100
94 8002 e
Figure 2. Forward Current vs. Ambient Temperature
tp – Pulse Duration ( ms )94 8003 e
100
101
101
10–1
10–1 100102
10–2
I – Forward Current ( A )
F
tp/T=0.01
IFSM = 2.5 A ( Single Pulse )
0.05
0.1
0.2
0.5
Figure 3. Pulse Forward Current vs. Pulse Duration
0123
V
F
– Forward Voltage ( V )
4
94 8005 e
101
102
103
104
I – Forward Current ( mA )
F
tp = 100
m
s
tp/T = 0.001
Figure 4. Forward Current vs. Forward Voltage
020406080
0.7
0.8
0.9
1.0
1.1
1.2
V – Relative Forward Voltage
Frel
Tamb – Ambient Temperature ( °C )
100
94 7990 e
IF = 10 mA
Figure 5. Relative Forward Voltage vs. Ambient Temperature
IF – Forward Current ( mA )94 8006 e
103
101102104
100
1
10
100
1000
I – Radiant Intensity ( mW/sr )
e
TSHA 5200
TSHA 5201
TSHA 5202
TSHA 5203
Figure 6. Radiant Intensity vs. Forward Current
TSHA520.
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96
4 (6)
– Radiant Power ( mW )
e
IF – Forward Current ( mA )94 8007 e
F
103
101102104
100
0.1
1
10
1000
100
Figure 7. Radiant Power vs. Forward Current
–10 10 500 100
0
0.4
0.8
1.2
1.6
I ;
e rel e rel
Tamb – Ambient Temperature ( °C )
140
94 8020 e
F
IF = 20 mA
Figure 8. Rel. Radiant Intensity\Power vs. Ambient
Temperature
780 880
l
– Wavelength ( nm )
980
94 8000 e
– Relative Radiant Power
e
F
0
0.25
0.5
0.75
1.0
1.25
IF = 100 mA
F
e(
l
)rel =
F
e(
l
)/
F
e(
l
p)
Figure 9. Relative Radiant Power vs. Wavelength
0.4 0.2 0 0.2 0.4
I – Relative Radiant Intensity
e rel
0.6
94 8008 e
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
Figure 10. Relative Radiant Intensity vs. Angular
Displacement
TSHA520.
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96 5 (6)
Dimensions in mm
12795
TSHA520.
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96
6 (6)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
