Agilent HDSP-A4xC Series
Alphanumeric Display, 0.54" (13.7 mm)
4 Character As AlInGaP Red
Data Sheet
Features
• As AlInGaP red color
• Gray face paint
Gray package gives optimum
contrast
• Design flexibility
Common anode or common
cathode
Applications
• Suitable for alphanumeric
• Operating temperature range
–40˚C to 105˚C
Devices
As AlInGaP Red Description
HDSP-A42C Common Anode
HDSP-A47C Common Cathode
Description
These 0.54” (13.7 mm) AS AlInGaP
displays are available in either com-
mon anode or common cathode.
Package Dimensions
2.94 (0.116)
6.19 (0.244)
1.94
(0.076) 0.50
(0.020) 4.32
(0.170) 2.02
(0.079)
10.08
(0.397)
10.08
(0.397)
10.08
(0.397)
1.46
(0.057) 5.10
(0.201)
40.45
(1.593)
6.48
(0.255)
5º
10.95
(0.431)
16.79
(0.661) 12.10
(0.476)
NOTES:
1. ALL DIMENSIONS ARE IN MILLIMETERS (INCHES)
2. UNLESS OTHERWISE STATED, TOLERANCES ARE ± 0.25mm
0.160
(0.063)
PIN 1
0.95
(0.038)
2
Part Numbering System
Notes:
1. For codes not listed in the figure above, please refer to the respective datasheet or contact your nearest
Agilent representative for details.
2. Bin options refer to shippable bins for a part number. Color and Intensity Bins are typically restricted to 1
bin per tube (exceptions may apply). Please refer to respective datasheet for specific bin limit information.
5082 -X X X X-X X X X X
HDSP-X X X X-X X X X X
Mechanical Options[1]
00: No Mechanical Option
Color Bin Options[1,2]
0: No Color Bin Limitation
Maximum Intensity Bin[1,2]
0: No Maximum Intensity Bin Limitation
Minimum Intensity Bin[1,2]
0: No Minimum Intensity Bin Limitation
Device Configuration/Color[1]
C: AlInGaP Red
Device Specific Configuration[1]
Refer to Respective Datasheet
Package[1]
Refer to Respective Datasheet
3
Internal Circuit
Pin Configuration A Pin Configuration B
Pin Common Anode Common Cathode
1 1E/2E Cathode 1E/2E Anode
2 1M/2M Cathode 1M/2M Anode
3 No Connection No Connection
4 1L/2L Cathode 1L/2L Anode
5 1K/2K Cathode 1K/2K Anode
6 1J/2J Cathode 1J/2J Anode
7 1D/2D Cathode 1D/2D Anode
8 DP2 Cathode DP2 Anode
9 1C/2C Cathode 1C/2C Anode
10 3E/4E Cathode 3E/4E Anode
11 DIGIT No. 3 Common Anode DIGIT No. 3 Common Cathode
12 3D/4D Cathode 3D/4D Anode
13 3J/4J Cathode 3J/4J Anode
14 3M/4M Cathode 3M/4M Anode
15 3L/4L Cathode 3L/4L Anode
16 DIGIT No. 4 Common Anode DIGIT No. 4 Common Cathode
17 3K/4K Cathode 3K/4K Anode
18 3C/4C Cathode 3C/4C Anode
19 3B/4B Cathode 3B/4B Anode
20 3H/4H Cathode 3H/4H Anode
21 No Connection No Connection
22 3G/4G Cathode 3G/4G Anode
23 3P/4P Cathode 3P/4P Anode
24 3N/4N Cathode 3N/4N Anode
25 3A/4A Cathode 3A/4A Anode
26 DP1 Cathode DP1 Anode
27 3F/4F Cathode 3F/4F Anode
28 1B/2B Cathode 1B/2B Anode
29 DIGIT No. 2 Common Anode DIGIT No. 2 Common Cathode
30 1A/2A Cathode 1A/2A Anode
31 1N/2N Cathode 1N/2N Anode
32 1H/2H Cathode 1H/2H Anode
33 1G/2G Cathode 1G/2G Anode
34 DIGIT No. 2 Common Anode DIGIT No. 2 Common Cathode
35 1P/2P Cathode 1P/2P Anode
36 1F/2F Cathode 1F/2F Anode
COMMON ANODE
COMMON CATHODE
30 28 9 7 1 3633326 5 4 2 3135 8
30 28 9 7 1 3633324 5 6 2 3135 8
COM 1
DIG 1
34
29
ABCDEFGHJKLMNP
ABCDEFGHJKLMNPDP2
ABCDEFGHJK LMN P
ABCDEFGHJKLMNPDP2
ABCDEFGHJKLMNP
ABCDEFGHJKLMNP
ABCDEFGHJKLMNP
DP1
ABCDEFGHJKLMN P
DP1
COM 2
DIG 2
COM 3
DIG 3
COM 4
DIG 4
11 16 20
11 16 20 25 19 18 12 10 27 22 20 13 17 15 14 24 23
29
COM 2
DIG 2
COM 1
DIG 1
34
COM 2
DIG 2
COM 3
DIG 3
COM 4
DIG 4
DIG 1 DIG 2 DIG 3 DIG 4
DP1
DP2
25 19 18 12 10 27 22 20 13 17 15 14 24 23
4
Absolute Maximum Ratings at TA = 25˚C
Description Symbol HDSP-A42C/HDSP-A47C Units
DC Forward Current per Segment or DP[1,2,3] IF50 mA
Peak Forward Current per Segment or DP[2,3] IPEAK 100 mA
Average Forward Current[3] IAVE 30 mA
Reverse Voltage per Segment or DP (IR = 100 µA) VR5V
Operating Temperature TO–40 to +105 ˚C
Storage Temperature TS–40 to +120 ˚C
Lead Soldering Conditions Temperature 260 ˚C
Time 3 s
Notes:
1. Derate linearly as shown in Figure 1.
2. For long term performance with minimal light output degradation, drive currents between 10 mA and 30 mA are recommended. For more
information on recommended drive conditions, please refer to Application Brief I-024 (5966-3087E).
3. Operating at currents below 1 mA is not recommended. Please contact your local representative for further information.
Bin Name Min.[2] Max.[2]
T 18.0 25.0
U 25.0 36.0
Notes:
1. Bin categories are established for
classification of products. Products may
not be available in all bin categories.
2. Tolerance for each bin limit is ± 10%.
Optical/Electrical Characteristics at TA = 25˚C
Device
Series
HDSP- Parameter Symbol Min. Typ. Max. Units Test Conditions
A42C Forward Voltage IV1.70 1.90 2.20 V IF = 20 mA
A47C Reverse Voltage VR520 V I
F
= 100 µA
Peak Wavelength λPEAK 635 nm Peak Wavelength
of Spectral Distri-
bution at IF = 20 mA
Dominant Wavelength[3] λd622.5 626 630 nm
Spectral Halfwidth ∆λ1/2 17 nm Wavelength Width
at Spectral Distri-
bution 1/2 Power
Point at IF = 20 mA
Speed of Response τs20 ns Exponential Time
Constant, e-tτs
Capacitance C 40 pF VF = 0, f = 1 MHz
Intensity Bin Limits[1]
(mcd at 10 mA)
5
Contrast Enhancement
For information on contrast
enhancement, please see
Application Note 1015.
Soldering/Cleaning
Cleaning agents from ketone
family (acetone, methyl ethyl
ketone, etc.) and from the
chlorinated hydrocarbon family
(methylene chloride,
trichloroethylene, carbon
tetrachloride, etc.) are not
recommended for cleaning LED
parts. All of these various
solvents attack or dissolve the
encapsulating epoxies used to
form the package of plastic LED
parts.
For information on soldering
LEDs, please refer to Application
Note 1027.
Figure 1. Maximum forward current vs.
ambient temperature. Derating based on
TJMAX = 130˚C.
Figure 2. Forward current vs. forwrad
voltage.
I
F
– MAXIMUM AVERAGE CURRENT – mA
0
0
T
A
– AMBIENT TEMPERATURE – ˚C
60
30
120
40
10
20
20
40
50
60 80 100
I
F
– FORWARD CURRENT PER SEGMENT – mA
0.0
0
V
F
– FORWARD VOLTAGE – V
120
60
2.0 3.0
80
20
1.0 2.5
40
1.5
100
Figure 3. Relative luminous intensity vs. DC
forward current.
Figure 4. Relative efficiency (luminous
intensity per unit current) vs. peak current.
RELATIVE LUMINOUS INTENSITY
(NORMALIZED TO 1 AT 10 mA)
0
0
I
F
– FORWARD CURRENT PER SEGMENT – mA
3.5
3.0
1.5
1.0
4020 6010 30 50
2.5
2.0
0.5
RELATIVE EFFICIENCY
(NORMALIZED TO 1 AT 10 mA)
0010203040 60
I
PEAK
– PEAK FORWARD CURRENT
PER SEGMENT – mA
0.2
0.4
0.6
0.8
1.0
1.4
1.2
50
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
November.20, 2001
5988-4822EN