BAR66
Semiconductor Group 1 Edition A01, 05.05.94
Type Marking Ordering Code
(taped) Pin Configuration
1 2 3 Package 1)
BAR66 PMs Q62702-A1473 A1 C2 C1/A2 SOT-23
Maximum Ratings
Parameter Symbol BAR66 Unit
Reverse voltage
V
R150 V
Forward current
I
F200 mA
Forward current (tp = 1µS)
I
F20 A
Power dissipation T
S
≤ 25°C 1)
P
tot 250 mW
Operating temperature range
T
op -55...+150 °C
Storage temperature range
T
stg -55...+150 °C
Thermal Resistance
Junction-ambient 1)
R
th JA ≤ 450 K/W
____________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon PIN Diode Array
ll
Surge protection device
l
Two PIN diodes, series configuration
l
Designed for surge overvoltage clamping in
antiparallel connection
BAR66
Semiconductor Group 2 Edition A01, 05.05.94
Characteristics per Diode
at
T
A = 25 °C, unless otherwise specified.
Parameter Symbol Value Unit
min. typ. max.
Reverse current
I
R = 5 µA
V
R150 - - V
Forward voltage
I
F = 50 mA
V
F- 0.95 1.2 V
Diode capacitance
V
R = 35 V,
f
=1M Hz
V
R = 0 V ,
f
=100 MHz
C
T-
-0.4
0.35 0.6
-
pF
Forward resistance
I
F = 10 mA,
f
= 100 MHz
r
f
- 1.5 - Ω
Charge carrier lifetime
I
F
=10 mA,
I
R = 6 mA,
I
R = 3 mA τL- 0.7 - µs
Series inductance
L
S-2-nH
Dioden capacitance
C
T =
f
(
V
R*)
f
= 1 MHz
