ce Nis LOW LEVEL AMPS (Cont.) PNP Transistors 3. Io = 20 BA, Voge = BY, Rg = 10 kQ, BW = 15.7 kHz Rg = 10 kQ, BW= 1.5 kHz f= 10 kHz f = 100 Hz, BW = 15 Hz, Rg = 10k2 6. Ic = 250nA, VceE = 5V, Rg = 1k, f= 1 kHz, BW = 150 Hz Rg = 3K, f = 1 kHz 9. Veg = 10V, Ic = 100 uA, RG =3k2 f= 1 kHz, BW = 200 Hz 12. Ve = 10V, i = 100 vA, Rg = 3 ka f = 100 Hz, BW = 20 Hz Vee = 10V, Ic = 100 uA, Rg =3k2 BW = 15.7 Hz Vv, V, Vv ' Vv, Vv L c f. t NEF CBO CEO E80 ceo CE (sat) BE (sat) Cc ob T Il off T T Vv, h t Vv est Process Ne ee wil ow loom | me CB] FE C8 fr Mog Wi ima) | (pF) (MHz) @ ay] ts) | (4B) | condition | No. . y Min Mio Min Max vi Min Max (em Max Min Max Max Min Max Max Max 2N4250 TO-106 40 40 5 10 40 250 700 01 5 0.25 10 6 2 2 62 2 4 2 6 2N4250A TO-106 60 60 5 10 50 250 700 01 5 0.25 10 6 2 2 62 2 4 2 6 2N4964 TO-106 50 40 5 25 20 30 120 0.01 5 0.4 10 8 60 1 6 7 62 40 10 5 2N4965 TO-106 50 40 5 26 20 80 400 0.01 5 O4 410 8 60 4 6 7 62 100 10 5 2N5086 TO-92(72) 50 50 50 35 150 500 01 5 0.3 10 4 40 0.5 3 8 62 150 1 5 3 2 150 10 5 2NS5087 TO-92(72) 50 50 50 35 250 800 0.1 5 0.3 10 4 40 0.5 2 8 62 250 1 6 2 2 250 10 5 2N5227 TO-92(72) 30 30 3 100 10 30 0.1 10 0.4 1 10 5 190 10 62 50 700 2 10 MPSA70 TO-92(72) 40 4 100 30 40 400 5 10 0.25 10 4 125 S 62 Test Conditions. 1. Iq = 10 uA, Veg = 5V, 4. te = 20uA,. Vee = 5V, 7. lo = 10uA, Veg = 5Y, 10. Voge ~ 10V, Ie = 100 uA, Ag =3kO Rg = 10k, BW = 15.7 kHz f= 1 kHz, BW = 150 Hz, Rg Okst, f= 1 kHz f= 10 kHz, BW = 2 kHz Rg = 10k2 BW = 200 2. le = 20 HA, Veg = SV, 5. i = 20 nA, Vce = SV, 8. Io = 100 uA, VcE = BV, i.