1.9
2.80±0.05
1.60±0.05
0.35
2.92±0.05
0.95±0.0251.02
SOT-23-3L Plastic-Encapsulate Transistors
MMBTA44 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P
CM : 0.35 W （Tamb=25℃）
Collector current
I
CM : 0.2 A
Collector-base voltage
V
(BR)CBO : 400 V
Operating and storage junction temperature range
T
J，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μA ， I
E=0 400 V
Collector-emitter breakdown voltage V(BR)CEO I
C= 1 mA , IB=0 400 V
Emitter-base breakdow n voltage V(BR)EBO IE=100μA， I
C=0 5 V
Collector cut-off current ICBO V
CB=400 V , IE=0 0.1
μA
Collector cut-off current ICEO V
CE=400 V , 5 μA
Emitter cut-off current IEBO V
EB= 4 V , I
C=0 0.1
μA
HFE（1） VCE=10V , IC=10 mA 80 300
HFE（2） VCE=10V, IC=1mA 70
DC current gain
HFE（3） VCE=10V ,IC=100 mA 60
VCE(sat) IC=10 mA, IB=1mA 0.2 V
Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB=5mA 0.3 V
Base-emitter sataration voltage VBE(sat) IC=10 mA, IB= 1 mA 0.75 V
Transition frequency f T
VCE=20V, IC=10mA
f =30MHz
50 MHz
MARKING:3D
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
Copyright @vic Electronics Corp. 1 Website http://www.avictek.com
MMBTA44
@vic
